公开(公告)号：US20230245891A1

公开(公告)日：2023-08-03

申请号：US17589329

申请日：2022-01-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Bhaskar Srinivasan ,  Pushpa Mahalingam ,  Mahalingam Nandakumar ,  Mona Eissa ,  Corinne Gagnet ,  Christopher Whitesell

IPC: H01L21/28 ,  H01L27/088 ,  H01L29/49 ,  H01L21/8234

CPC classification number: H01L21/28052 ,  H01L27/088 ,  H01L29/4933 ,  H01L21/823443

Abstract: A system and method for growing fine grain polysilicon. In one example, the method of forming an integrated circuit includes forming a dielectric layer over a semiconductor substrate, and forming a polysilicon layer over the dielectric layer. The polysilicon layer is formed by a chemical vapor deposition process that includes providing a gas flow including disilane and hydrogen gas over the semiconductor substrate.