公开(公告)号：US20210098565A1

公开(公告)日：2021-04-01

申请号：US16584463

申请日：2019-09-26

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Poornika FERNANDES ,  David Matthew CURRAN ,  Stephen Arlon MEISNER ,  Bhaskar SRINIVASAN ,  Guruvayurappan S. MATHUR ,  Scott William JESSEN ,  Shih Chang CHANG ,  Russell Duane FIELDS ,  Thomas Terrance LYNCH

IPC: H01L49/02

Abstract: In some examples, an integrated circuit comprises a substrate; a first metal layer and a second metal layer positioned above the substrate; a first composite dielectric layer located on the first metal layer, wherein the first composite dielectric layer comprises a first anti-reflective coating; a second composite dielectric layer positioned on the second metal layer, wherein the second composite dielectric layer comprises a second anti-reflective coating; and a capacitor metal layer disposed over the first composite dielectric layer.

公开(公告)号：US20220069067A1

公开(公告)日：2022-03-03

申请号：US17500096

申请日：2021-10-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Poornika FERNANDES ,  David Matthew CURRAN ,  Stephen Arlon MEISNER ,  Bhaskar SRINIVASAN ,  Guruvayurappan S. MATHUR ,  Scott William JESSEN ,  Shih Chang CHANG ,  Russell Duane FIELDS ,  Thomas Terrance LYNCH

IPC: H01L49/02 ,  H01L21/02

Abstract: In some examples, an integrated circuit comprises a substrate; a first metal layer and a second metal layer positioned above the substrate; a first composite dielectric layer located on the first metal layer, wherein the first composite dielectric layer comprises a first anti-reflective coating; a second composite dielectric layer positioned on the second metal layer, wherein the second composite dielectric layer comprises a second anti-reflective coating; and a capacitor metal layer disposed over the first composite dielectric layer.