公开(公告)号：US20190074193A1

公开(公告)日：2019-03-07

申请号：US15981725

申请日：2018-05-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Abbas ALI ,  Dhishan KANDE ,  Qi-Zhong HONG ,  Young-Joon PARK ,  Kyle MCPHERSON

IPC: H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/32136 ,  H01L21/76819 ,  H01L21/76837 ,  H01L21/76841 ,  H01L21/76885 ,  H01L23/53223

Abstract: A method of fabricating an integrated circuit (IC) includes depositing an aluminum-containing metal interconnect layer at a first temperature over a semiconductor device having a plurality of transistors. The metal interconnect layer is annealed at a maximum annealing temperature that is less than the first temperature. The metal interconnect layer is patterned after the annealing, thereby interconnecting the transistors.