公开(公告)号：US20190129298A1

公开(公告)日：2019-05-02

申请号：US15800868

申请日：2017-11-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lucius M. Sherwin ,  Song Zheng ,  Chris Murray Beard ,  Noppawan Boorananut

IPC: G03F1/44 ,  H01L21/027 ,  B81C1/00 ,  G03F7/20

Abstract: Methods and apparatus to control grayscale lithography are disclosed. A disclosed example apparatus for adjusting a grayscale lithography process includes an optical measurement device to optically measure portions of a patterned wafer, and a processor to calculate a profile based on the measured portions, and to determine an adjustment of the grayscale lithography process based on the calculated profile. The disclosed apparatus also includes an adjuster to control the grayscale lithography process based on the adjustment.

公开(公告)号：US20220326508A1

公开(公告)日：2022-10-13

申请号：US17808309

申请日：2022-06-23

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lucius M. Sherwin ,  Jesse Yuan ,  Noppawan Boorananut

IPC: G02B26/08

Abstract: A method includes forming a first aluminum silicon layer on a metal layer and forming a titanium nitride layer (or other titanium-based layer) on a surface of the aluminum-silicon layer opposite the metal layer. The method further includes etching the titanium nitride layer to create a titanium nitride pad and forming a torsion hinge in the metal layer. The titanium nitride pad is on the torsion hinge. The method also includes depositing a sacrificial layer over the torsion hinge and titanium nitride pad, forming a via in the sacrificial layer from a surface of the sacrificial layer opposite the torsion hinge to the titanium nitride pad, depositing a metal mirror layer on a surface of the sacrificial layer opposite the torsion hinge and into the via, and removing the sacrificial layer.

公开(公告)号：US20200064745A1

公开(公告)日：2020-02-27

申请号：US16672787

申请日：2019-11-04

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lucius M. Sherwin ,  Song Zheng ,  Chris Murray Beard ,  Noppawan Boorananut

IPC: G03F7/20 ,  G03F1/44 ,  H01L21/027 ,  B81C1/00 ,  G03F7/00 ,  G03F1/50

Abstract: A die includes a resist layer located over a semiconductor substrate, and a pattern developed in the resist layer. The pattern includes a plurality of locations of developed photoresist, each location of developed photoresist separated from a neighboring location of developed photoresist by a portion of undeveloped photoresist, and the developed photoresist at each location having a corresponding different thickness.

公开(公告)号：US11703678B2

公开(公告)日：2023-07-18

申请号：US17808309

申请日：2022-06-23

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lucius M. Sherwin ,  Jesse Yuan ,  Noppawan Boorananut

IPC: G02B26/08

CPC classification number: G02B26/0833

Abstract: A method includes forming a first aluminum silicon layer on a metal layer and forming a titanium nitride layer (or other titanium-based layer) on a surface of the aluminum-silicon layer opposite the metal layer. The method further includes etching the titanium nitride layer to create a titanium nitride pad and forming a torsion hinge in the metal layer. The titanium nitride pad is on the torsion hinge. The method also includes depositing a sacrificial layer over the torsion hinge and titanium nitride pad, forming a via in the sacrificial layer from a surface of the sacrificial layer opposite the torsion hinge to the titanium nitride pad, depositing a metal mirror layer on a surface of the sacrificial layer opposite the torsion hinge and into the via, and removing the sacrificial layer.

公开(公告)号：US11409098B2

公开(公告)日：2022-08-09

申请号：US15818973

申请日：2017-11-21

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lucius M. Sherwin ,  Jesse Yuan ,  Noppawan Boorananut

IPC: G02B26/08

Abstract: A method includes forming a first aluminum silicon layer on a metal layer and forming a titanium nitride layer (or other titanium-based layer) on a surface of the aluminum-silicon layer opposite the metal layer. The method further includes etching the titanium nitride layer to create a titanium nitride pad and forming a torsion hinge in the metal layer. The titanium nitride pad is on the torsion hinge. The method also includes depositing a sacrificial layer over the torsion hinge and titanium nitride pad, forming a via in the sacrificial layer from a surface of the sacrificial layer opposite the torsion hinge to the titanium nitride pad, depositing a metal mirror layer on a surface of the sacrificial layer opposite the torsion hinge and into the via, and removing the sacrificial layer.

公开(公告)号：US10466597B2

公开(公告)日：2019-11-05

申请号：US15800868

申请日：2017-11-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lucius M. Sherwin ,  Song Zheng ,  Chris Murray Beard ,  Noppawan Boorananut

IPC: G03F7/20 ,  G03F1/44 ,  H01L21/027 ,  B81C1/00

Abstract: Methods and apparatus to control grayscale lithography are disclosed. A disclosed example apparatus for adjusting a grayscale lithography process includes an optical measurement device to optically measure portions of a patterned wafer, and a processor to calculate a profile based on the measured portions, and to determine an adjustment of the grayscale lithography process based on the calculated profile. The disclosed apparatus also includes an adjuster to control the grayscale lithography process based on the adjustment.