公开(公告)号：US20200043849A1

公开(公告)日：2020-02-06

申请号：US16050383

申请日：2018-07-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Kuntal JOARDAR ,  Min CHU ,  Vijay KRISHNAMURTHY ,  Tikno HARJONO ,  Ankur CHAUHAN ,  Vinayak HEGDE ,  Manish SRIVASTAVA

IPC: H01L23/525 ,  H01L27/112 ,  G11C17/16

Abstract: An electronic device comprises a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a first gate, a first terminal, and a second terminal; a first sense transistor integrated in the first semiconductor die, the first sense transistor comprising a second gate and third and fourth terminals, the second gate coupled to the first gate and the fourth terminal coupled to the second terminal; a first resistor integrated in the first semiconductor die, the first resistor has a first temperature coefficient; a second sense transistor integrated in the first semiconductor die, the second sense transistor comprising a third gate and seventh and eighth terminals, the third gate coupled to the first gate and the eighth terminal coupled to the second terminal; and a second resistor integrated in the first semiconductor die, the second resistor has a second temperature coefficient.