公开(公告)号：US20200043849A1

公开(公告)日：2020-02-06

申请号：US16050383

申请日：2018-07-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Kuntal JOARDAR ,  Min CHU ,  Vijay KRISHNAMURTHY ,  Tikno HARJONO ,  Ankur CHAUHAN ,  Vinayak HEGDE ,  Manish SRIVASTAVA

IPC: H01L23/525 ,  H01L27/112 ,  G11C17/16

Abstract: An electronic device comprises a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a first gate, a first terminal, and a second terminal; a first sense transistor integrated in the first semiconductor die, the first sense transistor comprising a second gate and third and fourth terminals, the second gate coupled to the first gate and the fourth terminal coupled to the second terminal; a first resistor integrated in the first semiconductor die, the first resistor has a first temperature coefficient; a second sense transistor integrated in the first semiconductor die, the second sense transistor comprising a third gate and seventh and eighth terminals, the third gate coupled to the first gate and the eighth terminal coupled to the second terminal; and a second resistor integrated in the first semiconductor die, the second resistor has a second temperature coefficient.

公开(公告)号：US20210005587A1

公开(公告)日：2021-01-07

申请号：US16460870

申请日：2019-07-02

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Kuntal JOARDAR ,  Min CHU ,  Vijay KRISHNAMURTHY ,  Tikno HARJONO

IPC: H01L25/16 ,  G01R31/28 ,  H01L29/66 ,  H01L25/07 ,  G11C11/4074

Abstract: In some examples, an integrated circuit includes a plurality of power modules formed on a substrate, including a first power module located between second and third power modules. The first power module is configured to conduct a load current, and includes a power transistor and first and second sense transistors. The first sense transistor is disposed at a first position between the second power module and a central axis of the first power module, and the second sense transistor is disposed at a second position between the third power module and the central axis. The first sense transistor is configured to conduct a first sense current; and the second sense transistor is configured to conduct a second sense current. The first and second sense transistors are configured to direct the first and second sense currents toward a measurement circuit that is configured to determine a derived sense current indicative of the load current.

公开(公告)号：US20190204361A1

公开(公告)日：2019-07-04

申请号：US15859470

申请日：2017-12-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Tikno HARJONO ,  Vijay KRISHNAMURTHY ,  Min CHU ,  Kuntal JOARDAR ,  Gary Eugene DAUM ,  Subrato ROY ,  Vinayak HEGDE ,  Ankur CHAUHAN ,  Sathish VALLAMKONDA ,  Md Abidur RAHMAN ,  Eung Jung KIM

IPC: G01R15/14 ,  H01L27/06 ,  H01L49/02 ,  H01L25/18 ,  H03K17/567

CPC classification number: G01R15/146 ,  H01L25/18 ,  H01L27/0629 ,  H01L28/20 ,  H03K17/567

Abstract: An electronic device comprises: a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a gate, a first terminal, and a second terminal; a sense transistor integrated in the first semiconductor die, the sense transistor comprising a gate coupled to the gate of the power transistor, a first terminal, and a second terminal coupled to the second terminal of the power transistor; and a first resistor integrated in the first semiconductor die, the first resistor comprising a polysilicon section and a metal section coupled to the polysilicon section, the first resistor comprising a first terminal and a second terminal, wherein the first terminal of the first resistor is coupled to the first terminal of the sense transistor.