公开(公告)号：US10199461B2

公开(公告)日：2019-02-05

申请号：US14924584

申请日：2015-10-27

Applicant: Texas Instruments Incorporated

Inventor： Dan Carothers ,  Ricky Jackson ,  Rajarshi Mukhopadhyay ,  Ben Cook

IPC: H01L29/06 ,  H01L21/762 ,  H01L23/522 ,  H01L49/02 ,  H01L29/417 ,  H01L21/8234

Abstract: An integrated circuit is formed by forming an isolation trench through at least a portion of an interconnect region, at least 40 microns deep into a substrate of the integrated circuit, leaving at least 200 microns of substrate material under the isolation trench. Dielectric material is formed in the isolation trench at a substrate temperature no greater than 320° C. to form an isolation structure which separates an isolated region of the integrated circuit from at least a portion of the substrate. The isolated region contains an isolated component. The isolated region of the integrated circuit may be a region of the substrate, and/or a region of the interconnect region. The isolated region may be a first portion of the substrate which is laterally separated from a second portion of the substrate. The isolated region may be a portion of the interconnect region above the isolation structure.

公开(公告)号：US20170117356A1

公开(公告)日：2017-04-27

申请号：US14924584

申请日：2015-10-27

Applicant: Texas Instruments Incorporated

Inventor： Dan Carothers ,  Ricky Jackson ,  Rajarshi Mukhopadhyay ,  Ben Cook

IPC: H01L29/06 ,  H01L23/522 ,  H01L21/762

CPC classification number: H01L29/0649 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/823481 ,  H01L23/5223 ,  H01L23/5226 ,  H01L28/00 ,  H01L28/40 ,  H01L29/4175 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48464 ,  H01L2924/00014

Abstract: An integrated circuit is formed by forming an isolation trench through at least a portion of an interconnect region, at least 40 microns deep into a substrate of the integrated circuit, leaving at least 200 microns of substrate material under the isolation trench. Dielectric material is formed in the isolation trench at a substrate temperature no greater than 320° C. to form an isolation structure which separates an isolated region of the integrated circuit from at least a portion of the substrate. The isolated region contains an isolated component. The isolated region of the integrated circuit may be a region of the substrate, and/or a region of the interconnect region. The isolated region may be a first portion of the substrate which is laterally separated from a second portion of the substrate. The isolated region may be a portion of the interconnect region above the isolation structure.

公开(公告)号：US20210067126A1

公开(公告)日：2021-03-04

申请号：US16553518

申请日：2019-08-28

Applicant: Texas Instruments Incorporated

Inventor： Nicholas S. Dellas ,  Brian Goodlin ,  Ricky Jackson

IPC: H03H9/00 ,  H03H9/17 ,  H01L21/02 ,  H01L33/10 ,  H01L33/46

Abstract: A method for creating a double Bragg mirror is provided. The method comprises providing a wafer having a plurality of bulk acoustic wave (BAW) devices at an intermediate stage of manufacturing. A first dielectric layer is deposited over the wafer. A plurality of as-deposited thicknesses of the dielectric layer are determined, each as-deposited thickness corresponding to one BAW device from the plurality of BAW devices. A corresponding trimmed dielectric layer over each of the BAW devices is formed by removing a portion of the dielectric layer over each of the BAW devices, with a thickness of the removed portion determined from a corresponding as-deposited thickness and a target thickness. A Bragg acoustic reflector that includes the corresponding trimmed dielectric layer is formed over each of the BAW devices.

公开(公告)号：US11417725B2

公开(公告)日：2022-08-16

申请号：US17104478

申请日：2020-11-25

Applicant: Texas Instruments Incorporated

Inventor： Dan Carothers ,  Ricky Jackson ,  Rajarshi Mukhopadhyay ,  Ben Cook

IPC: H01L29/06 ,  H01L23/522 ,  H01L21/762 ,  H01L49/02 ,  H01L29/417 ,  H01L21/8234

Abstract: An integrated circuit is formed by forming an isolation trench through at least a portion of an interconnect region, at least 40 microns deep into a substrate of the integrated circuit, leaving at least 200 microns of substrate material under the isolation trench. Dielectric material is formed in the isolation trench at a substrate temperature no greater than 320° C. to form an isolation structure which separates an isolated region of the integrated circuit from at least a portion of the substrate. The isolated region contains an isolated component. The isolated region of the integrated circuit may be a region of the substrate, and/or a region of the interconnect region. The isolated region may be a first portion of the substrate which is laterally separated from a second portion of the substrate. The isolated region may be a portion of the interconnect region above the isolation structure.

公开(公告)号：US20190172907A1

公开(公告)日：2019-06-06

申请号：US16266677

申请日：2019-02-04

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dan Carothers ,  Ricky Jackson ,  Rajarshi Mukhopadhyay ,  Ben Cook

IPC: H01L29/06 ,  H01L21/762 ,  H01L23/522 ,  H01L49/02

Abstract: An integrated circuit is formed by forming an isolation trench through at least a portion of an interconnect region, at least 40 microns deep into a substrate of the integrated circuit, leaving at least 200 microns of substrate material under the isolation trench. Dielectric material is formed in the isolation trench at a substrate temperature no greater than 320° C. to form an isolation structure which separates an isolated region of the integrated circuit from at least a portion of the substrate. The isolated region contains an isolated component. The isolated region of the integrated circuit may be a region of the substrate, and/or a region of the interconnect region. The isolated region may be a first portion of the substrate which is laterally separated from a second portion of the substrate. The isolated region may be a portion of the interconnect region above the isolation structure.

公开(公告)号：US11146230B2

公开(公告)日：2021-10-12

申请号：US16553518

申请日：2019-08-28

Applicant: Texas Instruments Incorporated

Inventor： Nicholas S Dellas ,  Brian Goodlin ,  Ricky Jackson

IPC: H03H9/00 ,  H03H9/17 ,  H01L33/46 ,  H01L33/10 ,  H01L21/02

Abstract: A method for creating a double Bragg mirror is provided. The method comprises providing a wafer having a plurality of bulk acoustic wave (BAW) devices at an intermediate stage of manufacturing. A first dielectric layer is deposited over the wafer. A plurality of as-deposited thicknesses of the dielectric layer are determined, each as-deposited thickness corresponding to one BAW device from the plurality of BAW devices. A corresponding trimmed dielectric layer over each of the BAW devices is formed by removing a portion of the dielectric layer over each of the BAW devices, with a thickness of the removed portion determined from a corresponding as-deposited thickness and a target thickness. A Bragg acoustic reflector that includes the corresponding trimmed dielectric layer is formed over each of the BAW devices.

公开(公告)号：US20210083047A1

公开(公告)日：2021-03-18

申请号：US17104478

申请日：2020-11-25

Applicant: Texas Instruments Incorporated

Inventor： Dan Carothers ,  Ricky Jackson ,  Rajarshi Mukhopadhyay ,  Ben Cook

IPC: H01L29/06 ,  H01L23/522 ,  H01L21/762 ,  H01L49/02

Abstract: An integrated circuit is formed by forming an isolation trench through at least a portion of an interconnect region, at least 40 microns deep into a substrate of the integrated circuit, leaving at least 200 microns of substrate material under the isolation trench. Dielectric material is formed in the isolation trench at a substrate temperature no greater than 320° C. to form an isolation structure which separates an isolated region of the integrated circuit from at least a portion of the substrate. The isolated region contains an isolated component. The isolated region of the integrated circuit may be a region of the substrate, and/or a region of the interconnect region. The isolated region may be a first portion of the substrate which is laterally separated from a second portion of the substrate. The isolated region may be a portion of the interconnect region above the isolation structure.

公开(公告)号：US10854712B2

公开(公告)日：2020-12-01

申请号：US16266677

申请日：2019-02-04

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dan Carothers ,  Ricky Jackson ,  Rajarshi Mukhopadhyay ,  Ben Cook

IPC: H01L29/06 ,  H01L23/522 ,  H01L21/762 ,  H01L49/02 ,  H01L29/417 ,  H01L21/8234

Abstract: An integrated circuit is formed by forming an isolation trench through at least a portion of an interconnect region, at least 40 microns deep into a substrate of the integrated circuit, leaving at least 200 microns of substrate material under the isolation trench. Dielectric material is formed in the isolation trench at a substrate temperature no greater than 320° C. to form an isolation structure which separates an isolated region of the integrated circuit from at least a portion of the substrate. The isolated region contains an isolated component. The isolated region of the integrated circuit may be a region of the substrate, and/or a region of the interconnect region. The isolated region may be a first portion of the substrate which is laterally separated from a second portion of the substrate. The isolated region may be a portion of the interconnect region above the isolation structure.