公开(公告)号：US20190181134A1

公开(公告)日：2019-06-13

申请号：US15838876

申请日：2017-12-12

Applicant: Texas Instruments Incorporated

Inventor： Akram Ali Salman ,  Guruvayurappan Mathur ,  Ryo Tsukahara

IPC: H01L27/02 ,  H01L29/73 ,  H01L29/08 ,  H01L27/06 ,  H01L29/66

CPC classification number: H01L27/0262 ,  H01L27/0259 ,  H01L27/0623 ,  H01L29/0646 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/66234 ,  H01L29/66287 ,  H01L29/7302 ,  H01L29/7304

Abstract: Disclosed examples provide fabrications methods and integrated circuits with back ballasted NPN bipolar transistors which include an n-type emitter in a P doped region, a p-type base with a first side facing the emitter, and an n-type collector laterally spaced from a second side of the base, where the collector includes a first side facing the second side of the base, an opposite second side, a silicided first collector portion and a silicide blocked second collector portion covered with a non-conductive dielectric that extends laterally between the first collector portion and the second side of the collector to provide back side ballasting for lateral breakdown and low current conduction via a deep N doped region while the vertical NPN turns on at a high voltage.

公开(公告)号：US10700055B2

公开(公告)日：2020-06-30

申请号：US15838876

申请日：2017-12-12

Applicant: Texas Instruments Incorporated

Inventor： Akram Ali Salman ,  Guruvayurappan Mathur ,  Ryo Tsukahara

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/73 ,  H01L29/06

Abstract: Disclosed examples provide fabrications methods and integrated circuits with back ballasted NPN bipolar transistors which include an n-type emitter in a P doped region, a p-type base with a first side facing the emitter, and an n-type collector laterally spaced from a second side of the base, where the collector includes a first side facing the second side of the base, an opposite second side, a silicided first collector portion and a silicide blocked second collector portion covered with a non-conductive dielectric that extends laterally between the first collector portion and the second side of the collector to provide back side ballasting for lateral breakdown and low current conduction via a deep N doped region while the vertical NPN turns on at a high voltage.

公开(公告)号：US11521961B2

公开(公告)日：2022-12-06

申请号：US16914579

申请日：2020-06-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Akram Ali Salman ,  Guruvayurappan Mathur ,  Ryo Tsukahara

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/73

Abstract: An integrated circuit includes a bipolar transistor, e.g. a back-ballasted NPN, that can conduct laterally and vertically. At a low voltage breakdown and low current conduction occur laterally near a substrate surface, while at a higher voltage vertical conduction occurs in a more highly-doped channel below the surface. A relatively high-resistance region at the surface has a low doping level to guide the conduction deeper into the collector.

公开(公告)号：US20200328204A1

公开(公告)日：2020-10-15

申请号：US16914579

申请日：2020-06-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Akram Ali Salman ,  Guruvayurappan Mathur ,  Ryo Tsukahara

IPC: H01L27/02 ,  H01L29/73 ,  H01L29/66 ,  H01L27/06 ,  H01L29/08 ,  H01L29/06

Abstract: Disclosed examples provide fabrications methods and integrated circuits with back ballasted NPN bipolar transistors which include an n-type emitter in a P doped region, a p-type base with a first side facing the emitter, and an n-type collector laterally spaced from a second side of the base, where the collector includes a first side facing the second side of the base, an opposite second side, a silicided first collector portion and a silicide blocked second collector portion covered with a non-conductive dielectric that extends laterally between the first collector portion and the second side of the collector to provide back side ballasting for lateral breakdown and low current conduction via a deep N doped region while the vertical NPN turns on at a high voltage.