公开(公告)号：US09548384B2

公开(公告)日：2017-01-17

申请号：US14282600

申请日：2014-05-20

Applicant: Texas Instruments Incorporated

Inventor： Mahalingam Nandakumar ,  Steve Lytle

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/66 ,  H01L21/768 ,  H01L23/485 ,  H01L23/528 ,  H01L29/49

CPC classification number: H01L29/4966 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/76895 ,  H01L23/485 ,  H01L23/528 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit may include a metal gate which extends over an active area and onto an isolation dielectric layer. A conductive spline is formed on the metal gate, extending on the metal gate over at least a portion of the isolation dielectric layer, and extending on the metal gate for a length at least four times a width of the metal gate.

Abstract translation: 集成电路可以包括在有源区上延伸到隔离电介质层上的金属栅极。 导电花键形成在金属栅极上，在金属栅极上延伸至隔离绝缘层的至少一部分上，并在金属栅极上延伸至金属栅极宽度的至少四倍的长度。

公开(公告)号：US09054158B2

公开(公告)日：2015-06-09

申请号：US13762529

申请日：2013-02-08

Applicant: Texas Instruments Incorporated

Inventor： David Gerald Farber ,  Tom Lii ,  Steve Lytle

IPC: H01L21/00 ,  H01L21/768

CPC classification number: H01L21/76804 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76897

Abstract: The width of a metal contact opening is formed to be smaller than the minimum feature size of a photolithographically-defined opening. The method forms the metal contact opening by first etching the fourth layer of a multilayered hard mask structure to have a number of trenches that expose the third layer of the multilayered hard mask structure. Following this, the third, second, and first layers of the multilayered hard mask structure are selectively etched to expose uncovered regions on the top surface of an isolation layer that touches and lies over a source region and a drain region. The uncovered regions on the top surface of the isolation layer are then etched to form the metal contact openings.

Abstract translation: 金属接触开口的宽度形成为小于光刻限定开口的最小特征尺寸。 该方法通过首先蚀刻多层硬掩模结构的第四层来形成金属接触开口，以具有暴露多层硬掩模结构的第三层的多个沟槽。 接下来，选择性地蚀刻多层硬掩模结构的第三层，第二层和第一层，以暴露接触并位于源极区域和漏极区域上的隔离层的顶表面上的未覆盖区域。 然后蚀刻隔离层的顶表面上的未覆盖区域以形成金属接触开口。

公开(公告)号：US10276684B2

公开(公告)日：2019-04-30

申请号：US15372512

申请日：2016-12-08

Applicant: Texas Instruments Incorporated

Inventor： Mahalingam Nandakumar ,  Steve Lytle

IPC: H01L29/49 ,  H01L29/78 ,  H01L21/762 ,  H01L29/66 ,  H01L21/768 ,  H01L23/485 ,  H01L23/528 ,  H01L27/088 ,  H01L29/06

Abstract: An integrated circuit may include a metal gate which extends over an active area and onto an isolation dielectric layer. A conductive spline is formed on the metal gate, extending on the metal gate over at least a portion of the isolation dielectric layer, and extending on the metal gate for a length at least four times a width of the metal gate.

公开(公告)号：US20140227877A1

公开(公告)日：2014-08-14

申请号：US13762529

申请日：2013-02-08

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： David Gerald Farber ,  Tom Lii ,  Steve Lytle

IPC: H01L21/768

CPC classification number: H01L21/76804 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76897

Abstract: The width of a metal contact opening is formed to be smaller than the minimum feature size of a photolithographically-defined opening. The method forms the metal contact opening by first etching the fourth layer of a multilayered hard mask structure to have a number of trenches that expose the third layer of the multilayered hard mask structure. Following this, the third, second, and first layers of the multilayered hard mask structure are selectively etched to expose uncovered regions on the top surface of an isolation layer that touches and lies over a source region and a drain region. The uncovered regions on the top surface of the isolation layer are then etched to form the metal contact openings.

Abstract translation: 金属接触开口的宽度形成为小于光刻限定开口的最小特征尺寸。 该方法通过首先蚀刻多层硬掩模结构的第四层来形成金属接触开口，以具有暴露多层硬掩模结构的第三层的多个沟槽。 接下来，选择性地蚀刻多层硬掩模结构的第三层，第二层和第一层，以暴露接触并位于源极区域和漏极区域上的隔离层的顶表面上的未覆盖区域。 然后蚀刻隔离层的顶表面上的未覆盖区域以形成金属接触开口。