公开(公告)号：US20240283404A1

公开(公告)日：2024-08-22

申请号：US18653277

申请日：2024-05-02

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Udit RAWAT ,  Bichoy BAHR ,  Swaminathan SANKARAN

IPC: H03B5/24 ,  G01S13/88 ,  H03H9/02

CPC classification number: H03B5/24 ,  G01S13/88 ,  H03H9/02007

Abstract: An apparatus comprises a piezoelectric resonator, a first active inductor circuit, and a second active inductor circuit. The piezoelectric resonator includes a first resonator terminal and a second resonator terminal. The first active inductor circuit is coupled between the first resonator terminal and a power supply terminal, the first active inductor circuit having a first impedance that reduces with a first frequency where the first frequency is at or above 1 GHz. The second active inductor circuit is coupled between the second resonator terminal and the power supply terminal, the second active inductor circuit having a second impedance that reduces with a second frequency where the second frequency is at or above 1 GHz.

公开(公告)号：US20240113063A1

公开(公告)日：2024-04-04

申请号：US17957446

申请日：2022-09-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Udit RAWAT ,  Bichoy BAHR ,  Swaminathan SANKARAN ,  Baher S. HAROUN

IPC: H01L23/00 ,  A61B8/00

CPC classification number: H01L24/24 ,  A61B8/4494 ,  H01L24/05 ,  H01L24/73 ,  H01L2224/05005 ,  H01L2224/2401 ,  H01L2224/73251

Abstract: In examples, a semiconductor die comprises a semiconductor substrate having a surface, the surface having first and second surface portions, and a radiator layer on the surface. The radiator layer comprises a metal member having a first metal member portion above the first surface portion and a second metal member portion above the second surface portion, a first distance between the first metal member portion and the first surface portion, and a second distance between the second metal member portion and the second surface portion, the first distance less than the second distance. The radiator layer includes first and second electrodes. The radiator layer includes a piezoelectric layer extending along a length of the radiator layer and on each of the first and second electrodes, the piezoelectric layer between the first and second metal members and the semiconductor substrate.

公开(公告)号：US20240039475A1

公开(公告)日：2024-02-01

申请号：US17876008

申请日：2022-07-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Udit RAWAT ,  Bichoy BAHR ,  Swaminathan SANKARAN

IPC: H03B5/24 ,  H03H9/02 ,  G01S13/88

CPC classification number: H03B5/24 ,  H03H9/02007 ,  G01S13/88

Abstract: An oscillator circuit includes a bulk acoustic wave resonator, a differential active inductor circuit, and a gain circuit. The differential active inductor circuit is configured to bias the bulk acoustic wave resonator. The differential active inductor circuit is coupled between the bulk acoustic wave resonator and a power supply terminal. The gain circuit is coupled to the bulk acoustic wave resonator.

公开(公告)号：US20240007078A1

公开(公告)日：2024-01-04

申请号：US17854170

申请日：2022-06-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Udit RAWAT ,  Bichoy BAHR

IPC: H03H9/02 ,  H03H9/24

CPC classification number: H03H9/02448 ,  H03H9/2405

Abstract: A microelectromechanical systems (MEMS) resonator includes a substrate, an array of ferroelectric capacitors on the substrate, and a three-dimensional metal stack above the array of ferroelectric capacitors. The three-dimensional metal stack may include more than two metal layers. Each of the metal layers is coupled to another of the metal layers by more than two metal vias.