公开(公告)号：US20190157091A1

公开(公告)日：2019-05-23

申请号：US16163602

申请日：2018-10-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dong Seup LEE ,  Yoshikazu KONDO ,  Pinghai HAO ,  Sameer PENDHARKAR

IPC: H01L21/28 ,  H01L29/423 ,  H01L21/02 ,  H01L29/778 ,  H01L29/51 ,  H01L29/205 ,  H01L29/20 ,  H01L29/66

Abstract: An electronic device, that in various embodiments includes a first semiconductor layer comprising a first group III nitride. A second semiconductor layer is located directly on the first semiconductor layer and comprises a second different group III nitride. A cap layer comprising the first group III nitride is located directly on the second semiconductor layer. A dielectric layer is located over the cap layer and directly contacts the second semiconductor layer through an opening in the cap layer.