公开(公告)号：US20230069057A1

公开(公告)日：2023-03-02

申请号：US17797063

申请日：2021-07-05

申请人： THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION

发明人： Yanlei SHI ,  Niefeng SUN ,  Shujie WANG ,  Lijie FU ,  Huimin SHAO ,  Hongfei ZHAO ,  Yaqi LI ,  Huisheng LIU ,  Tongnian SUN ,  Yong KANG ,  Xiaodan ZHANG ,  Xin ZHANG ,  Jian JIANG ,  Xiaolan LI ,  Yang WANG ,  Jing XUE

IPC分类号： C30B15/00

摘要： A growth device and method for low-stress crystals are provided, which relate to the field of preparation of crystals, in particular to a device and method for preparing low-stress and low-defect crystals by using a pulling method. The growth device includes a furnace body; a crucible and a heating and insulation system which are arranged at a bottom of the furnace body; a crystal pulling mechanism, and a quartz observation window; the device further includes a liftable heating mantle mechanism including a heating mantle body, a heating mantle supporting component, a heating wire arranged around the heating mantle body, and a heating mantle lifting mechanism. The method includes: after crystals are pulled out of a melt, covering the crystals with a liftable heating mantle mechanism. By the use of the present invention, a temperature gradient inside the crystals in a crystal growth process and in a cooling process after the crystals are pulled can be reduced, thereby reducing the crystal stress, reducing defects, and avoiding the crystals from being cracked; and at the same time, the temperature gradient in the melt is maintained, thereby guaranteeing a stable crystal growth process and ensuring the yield of the crystals.