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1.发明公开公开(公告)号：US20240209545A1
公开(公告)日：2024-06-27
申请号：US18294938
申请日：2021-12-08
发明人： Shujie WANG , Niefeng SUN , Aimin BU , Lijie FU , Huimin SHAO , Zheng LIU , Senfeng XU , Yanlei SHI , Xiaolan LI , Yang WANG , Tongnian SUN
摘要： The present invention discloses a method for preparing a compound semiconductor crystal by continuous LEC and VGF combination after injection synthesis, including: step A, vacuuming a system for preparing compounds and filling the system with an inert gas; step B, heating to melt the metallic raw material and boron oxide I in a synthesis crucible; step C, heating to melt boron oxide II, and moving the synthesis injection system downwards to move the end of the injection synthesis tube until the metallic raw material in the crucible is synthesized into a first melt; step D, slowly reducing the pressure inside the VGF crucible so that the first melt enters the VGF crucible to form a second melt; etc. In the present invention, the upper part is a VGF growth part and the lower part is a synthesis part; the synthesis part entering the VGF growth part by reverse sucking, while the VGF growth part is configured with a seed crystal rod and an observation system, and also can be subjected to gas control. At the beginning, LEC seeding and diameter enlarging at a high temperature gradient are implemented, and then the grown crystal is used for VGF crystal growth at a low temperature gradient, so that a high-quality crystal with low defects can be prepared with high yield.
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公开(公告)号：US20220081799A1
公开(公告)日：2022-03-17
申请号：US17415952
申请日：2020-09-10
发明人： Niefeng SUN , Shujie WANG , Yanlei SHI , Huimin SHAO , Lijie FU , Xiaolan LI , Yang WANG , Senfeng XU , Huisheng LIU , Tongnian SUN
摘要： The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis. The method has the advantages of short reaction time, high efficiency and raw material saving, which can effectively reduce the risk of contamination of materials, saves procedures and reduces the material preparation cost.
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公开(公告)号：US20240035192A1
公开(公告)日：2024-02-01
申请号：US17797395
申请日：2021-07-05
发明人： Shujie WANG , Niefeng SUN , Yang WANG , Xiaolan LI , Yanlei SHI , Huimin SHAO , Lijie FU , Zheng LIU , Tongnian SUN , Huisheng LIU
摘要： A polishing device for an indium phosphide substrate and a polishing process are provided, which belong to the technical field of polishing of indium phosphide. The polishing device includes an electrolyzer, and further includes an anode disc supporting rod positioned at a center position of a bottom of the electrolyzer by virtue of an anode lifting mechanism; an anode disc hinged to an upper end of the anode disc supporting rod; a cathode disc supporting rod positioned above the anode disc by virtue of a cathode lifting mechanism; a cathode disc arranged at a lower end of the cathode disc supporting rod; a graphite electrode plate arranged on the anode disc by virtue of a connection mechanism; a group of planet gears arranged on an upper end surface of the graphite electrode plate by virtue of an intermediate driving mechanism; an anode rotation driving mechanism connected to the intermediate driving mechanism; a cathode rotation driving mechanism connected to the cathode disc supporting rod; and a polishing direct current (DC) power supply respectively connected to contacts of the anode disc supporting rod and the cathode disc supporting rod by virtue of wires. By improving the structure of the device and the manufacturing process, a requirement for the environment in the polishing process of indium phosphide is greatly reduced, and electrochemical and mechanical dual-polishing is achieved.
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4.发明申请公开(公告)号：US20230038976A1
公开(公告)日：2023-02-09
申请号：US17880597
申请日：2022-08-03
发明人： Jian JIANG , Niefeng SUN , Tongnian SUN , Shujie WANG , Huimin SHAO , Lijie FU , Yanlei SHI , Xiaolan LI
摘要： A rocking type seed crystal surface corrosion, cleaning and drying device and a process method belong to the technical field of semiconductor crystal growth, comprising a corrosion tank and a matched corrosion tank cover, a seed crystal support platform arranged at a middle position of the bottom of the corrosion tank, and a high-purity hot nitrogen introduction short straight pipe, an corrosive liquid introduction short straight pipe, a deionized water introduction short straight pipe and an overflow liquid discharge short straight pipe matched with and arranged at both sides of the corrosion tank, wherein free ends of the high-purity hot nitrogen introduction short straight pipe, the corrosive liquid introduction short straight pipe and the deionized water introduction short straight pipe are all provided with switch stop valves; the device further comprises a rocking mechanism provided at the bottom of the corrosion tank; and the seed crystal support platform comprises a support frame symmetrically distributed on both sides of the vertical central axis of the corrosion tank and positioned at the bottom of the corrosion tank, a seed crystal support wheel mounted on an upper end of the support frame via a rotating shaft, and a matched seed crystal support wheel limiting mechanism. Adequate corrosion can be performed on the entire seed crystal surface, and the cleaning and drying processes of the seed crystal in the subsequent process can be combined organically to avoid secondary contamination of the seed crystal in the subsequent process.
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公开(公告)号：US20220074073A1
公开(公告)日：2022-03-10
申请号：US17415962
申请日：2020-09-25
发明人： Shujie WANG , Niefeng SUN , Yanlei SHI , Huimin SHAO , Xiaolan LI , Yang WANG , Lijie FU , Senfeng XU , Jian JIANG , Huisheng LIU , Tongnian SUN
IPC分类号： C30B33/06
摘要： Disclosed is an apparatus for preparing a large-size single crystal, which relates to the field of semiconductor material preparation, and more particularly, to an apparatus for preparing a large-size single crystal from a plurality of small-size single crystals by connecting them in solid states. The apparatus includes a hydrocooling furnace, a solid connection chamber hermetically disposed in the hydrocooling furnace, and combined fixtures provided in the solid connection chamber, wherein a plurality of crystal pieces are fixed by the combined fixtures, a top column or a stress block is used for pressing the crystal piece through the combined fixtures, a heating wire surrounding the solid connection chamber is provided in the hydrocooling furnace, a vacuum tube is communicated with the solid connection chamber, and a thermocouple is disposed close to the combined fixtures. The present disclosure is advantageous in that: 1, single crystal pieces with a small size can be connected and prepared into a single crystal with a larger size, 2, in the preparation process, the problems in the conventional single crystal growth process, such as twinning and polycrystallization, can be excluded from consideration, 3, the equipment is simple, and 4, preparation of single crystals with any size is possible theoretically.
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公开(公告)号：US20240228286A1
公开(公告)日：2024-07-11
申请号：US18291104
申请日：2021-07-05
发明人： Shujie WANG , Niefeng SUN , Huisheng LIU , Tongnian SUN , Senfeng XU , Yanlei SHI , Huimin SHAO , Lijie FU , Jian JIANG , Yang WANG , Xiaolan LI
IPC分类号： C01B25/04
CPC分类号： C01B25/04 , C01B2210/0025 , C01B2210/0042
摘要： A purification apparatus and purification method of a non-metallic semiconductor material relate to the field of preparation of high-purity materials, and are especially applicable to preparation of high-purity non-metal materials, in particular to an apparatus and method for purifying a non-metallic semiconductor material by means of a metal melt. The apparatus includes a furnace body, a pressure balance valve, a crucible disposed in the middle of the lower part of the furnace body, a heating and supporting structure for the crucible, a liftable injection mechanism disposed right above the crucible, and a liftable and rotatable recovery mechanism disposed next to the liftable injection mechanism. The method is completed based on the purification apparatus, and includes: injecting the gasified non-metal material into the metal melt under a high pressure environment; reducing the ambient pressure, and collecting the bubbles volatilized from the metal melt to obtain the purified non-metal material. The technical solution proposed in the present invention can be used to effectively remove impurities in the non-metal material, especially remove elements of similar properties. The apparatus is highly integrated and easy to control, and the method is simple.
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公开(公告)号：US20220072660A1
公开(公告)日：2022-03-10
申请号：US17415928
申请日：2020-09-10
发明人： Yanlei SHI , Niefeng SUN , Shujie WANG , Hongfei ZHAO , Yaqi LI , Lijie FU , Yang WANG , Xiaolan LI , Huimin SHAO , Huisheng LIU , Jian JIANG
IPC分类号： B23K26/362 , H01L21/02 , B23K26/402 , B23K37/04 , B28D5/04 , B28D5/00
摘要： The invention discloses a method for cutting a substrate wafer from an indium phosphide crystal, and belongs to the field of semiconductor substrate preparation, comprises the following steps of: 1) orientating, cutting the head and the tail of a crystal bar, adjusting the orientation and trying to cut the crystal bar until a wafer with a required crystal orientation cut, wherein the cutting end face is an orientation end face; 2) multi-wire cutting, on a multi-wire cutting apparatus, dividing a crystal bar parallel to an orientation end face into wafers; 3) cleaning, cleaning the wafer until no residue and no dirt existing on the surface; 4) circle cutting, performing circle cutting on the wafer to cut the desired crystal orientation area. According to the technical scheme, for the indium phosphide crystal bar which is difficult to control in diameter and easy to twinning/ poly in the growth process, a barreling process which may grind and remove a large amount of InP materials is abandoned, the crystal bar is multi-wire cut into a wafer, and then the substrate wafer which is available in the crystal direction close to the standard size is cut from the wafer to the maximum extent, so that the wafer output can be greatly increased, and the material loss and the waste can be reduced.
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8.发明申请公开(公告)号：US20190352794A1
公开(公告)日：2019-11-21
申请号：US16475842
申请日：2017-12-11
发明人： Shujie WANG , Niefeng SUN , Huisheng LIU , Tongnian SUN , Yanlei SHI , Huimin SHAO , Xiaolan LI , Yang WANG , Lijie FU
摘要： The invention provides a device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis, and belongs to the technical field of semiconductor crystal synthesis and growth. According to the used technical scheme, the device comprises a furnace body, a synthesis and crystal growth system positioned in a furnace cavity, and a heating system, a temperature measuring system, a heat preservation system and a control system matched therewith, wherein the synthesis and crystal growth system comprises a crucible and a volatile element carrier arranged on a horizontal side of the crucible, and the volatile element carrier is communicated with the crucible through an injection pipe to realize horizontal injection synthesis; the furnace body has a rotational freedom degree by means of a matched rotating mechanism, so that after the direct horizontal injection synthesis of a volatile element and a pure metal element, the entire furnace body is controlled by the rotating mechanism to slowly rotate, such that a high-purity compound semiconductor crystal is prepared through continuous VGF crystal growth after crystal synthesis, and the condition that a seed crystal is molten by the pure metal before VGF crystal growth can be avoided; and the method has characteristics of simple steps, easy operation and control, and is suitable for the industrial production of semiconductor crystals.
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公开(公告)号：US20240209546A1
公开(公告)日：2024-06-27
申请号：US18293137
申请日：2021-12-08
发明人： Shujie WANG , Niefeng SUN , Senfeng XU , Tongnian SUN , Huisheng LIU
摘要： A preparation device and method of semi-insulated indium phosphide belong to the field of crystal preparation. The preparation device includes a furnace body, and a crucible, an injector and an in-situ annealing device within the furnace body. The method includes: A, heating indium to form an indium melt; B, filling the furnace body with hydrogen of 0.02-0.3 MPa and holding the pressure for 1-5 hours, and covering the surface of the melt with liquid boron oxide; C, filling the furnace body with an inert gas of 6-15 MPa; D, injecting a phosphorus gas into the indium melt by the injector; E, growing a crystal; and F, annealing the crystal within the in-situ annealing device. Using the present invention can complete the growth of the crystal and implement the in-situ annealing of the crystal in a suitable space, and especially when annealing under a phosphorus atmosphere is required, it ensures that the phosphorus gas does not condense to maintain the pressure in the annealing space and establish a good annealing environment, and the quality of the semi-insulated indium phosphide crystal is ensured.
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公开(公告)号：US20230055938A1
公开(公告)日：2023-02-23
申请号：US17797073
申请日：2020-09-10
发明人： Lijie FU , Niefeng SUN , Shujie WANG , Xiaolan LI , Xin ZHANG , Xiaodan ZHANG , Yanlei SHI , Huimin SHAO , Yang WANG
摘要： The present invention relates to a process for synthesizing indium phosphide by liquid phosphorus injection method, which belongs to the field of semiconductor technology. The method comprises: converting gaseous phosphorus into liquid phosphorus through a condenser, injecting the liquid phosphorus into an indium melt while preventing phosphorus vaporization by randomly delivering a low temperature inert gas, and causing an instantaneous reaction between the liquid phosphorus and the liquid indium melt, so that an indium phosphide melt can be synthesized at a relatively low temperature, with advantages of high efficiency, high purity, precise proportioning, large capacity, aiding in the growth of a phosphorus-rich indium phosphide polycrystal and facilitating the growth of an indium phosphide monocrystal. The method includes the steps of indium cleaning, phosphorus charging, furnace loading, communication of condenser, synthesis, preparation of crystals, etc.
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