公开(公告)号：US20230069057A1

公开(公告)日：2023-03-02

申请号：US17797063

申请日：2021-07-05

申请人： THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION

发明人： Yanlei SHI ,  Niefeng SUN ,  Shujie WANG ,  Lijie FU ,  Huimin SHAO ,  Hongfei ZHAO ,  Yaqi LI ,  Huisheng LIU ,  Tongnian SUN ,  Yong KANG ,  Xiaodan ZHANG ,  Xin ZHANG ,  Jian JIANG ,  Xiaolan LI ,  Yang WANG ,  Jing XUE

IPC分类号： C30B15/00

摘要： A growth device and method for low-stress crystals are provided, which relate to the field of preparation of crystals, in particular to a device and method for preparing low-stress and low-defect crystals by using a pulling method. The growth device includes a furnace body; a crucible and a heating and insulation system which are arranged at a bottom of the furnace body; a crystal pulling mechanism, and a quartz observation window; the device further includes a liftable heating mantle mechanism including a heating mantle body, a heating mantle supporting component, a heating wire arranged around the heating mantle body, and a heating mantle lifting mechanism. The method includes: after crystals are pulled out of a melt, covering the crystals with a liftable heating mantle mechanism. By the use of the present invention, a temperature gradient inside the crystals in a crystal growth process and in a cooling process after the crystals are pulled can be reduced, thereby reducing the crystal stress, reducing defects, and avoiding the crystals from being cracked; and at the same time, the temperature gradient in the melt is maintained, thereby guaranteeing a stable crystal growth process and ensuring the yield of the crystals.

公开(公告)号：US20230055938A1

公开(公告)日：2023-02-23

申请号：US17797073

申请日：2020-09-10

申请人： THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION

发明人： Lijie FU ,  Niefeng SUN ,  Shujie WANG ,  Xiaolan LI ,  Xin ZHANG ,  Xiaodan ZHANG ,  Yanlei SHI ,  Huimin SHAO ,  Yang WANG

IPC分类号： C30B15/02 ,  C30B29/40 ,  C30B15/00

摘要： The present invention relates to a process for synthesizing indium phosphide by liquid phosphorus injection method, which belongs to the field of semiconductor technology. The method comprises: converting gaseous phosphorus into liquid phosphorus through a condenser, injecting the liquid phosphorus into an indium melt while preventing phosphorus vaporization by randomly delivering a low temperature inert gas, and causing an instantaneous reaction between the liquid phosphorus and the liquid indium melt, so that an indium phosphide melt can be synthesized at a relatively low temperature, with advantages of high efficiency, high purity, precise proportioning, large capacity, aiding in the growth of a phosphorus-rich indium phosphide polycrystal and facilitating the growth of an indium phosphide monocrystal. The method includes the steps of indium cleaning, phosphorus charging, furnace loading, communication of condenser, synthesis, preparation of crystals, etc.

公开(公告)号：US20210285123A1

公开(公告)日：2021-09-16

申请号：US16627919

申请日：2018-12-21

申请人： THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION

发明人： Shujie WANG ,  Niefeng SUN ,  Tongnian SUN ,  Huisheng LIU ,  Yanlei SHI ,  Huimin SHAO ,  Lijie FU ,  Jian JIANG ,  Xiaodan ZHANG ,  Xiaolan LI ,  Yang WANG

IPC分类号： C30B11/00 ,  C30B27/00 ,  C30B29/40

摘要： The invention discloses a device and a method for continuous VGF crystal growth through reverse injection synthesis, relating to a device for preparing a semiconductor crystal and growing a single crystal, in particular to a method and a device for continuously growing the crystal in situ by using a VGF method and reverse injection synthesis. The device includes a furnace body, a crucible, a heat preservation system, a heating system, a temperature control system and an gas pressure regulation system, wherein the crucible is arranged in the furnace body, has a synthesis unit at its upper part, and has a crystal growth unit and a seed crystal unit at its lower part, and the synthesis unit is communicated with the crystal growth unit through capillary pores. Red phosphorus and boron oxide are put into the growth unit, indium and boron oxide are put into the synthesis unit, solid seed crystals are put into the seed crystal unit, and temperature and pressure are controlled to accomplish material synthesis and in-situ crystal growth. According to the invention, the capillary pores are used, the temperature and the pressure are controlled, the phosphorus bubbles rise to the indium melt in the material synthesis stage, rendering a full fusion of the two substances, and after the phosphorus gasification, the indium-phosphorus melt drops into the growth unit to finish the in-situ growth of the crystal.