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1.发明公开公开(公告)号：US20240209545A1
公开(公告)日：2024-06-27
申请号：US18294938
申请日：2021-12-08
发明人： Shujie WANG , Niefeng SUN , Aimin BU , Lijie FU , Huimin SHAO , Zheng LIU , Senfeng XU , Yanlei SHI , Xiaolan LI , Yang WANG , Tongnian SUN
摘要： The present invention discloses a method for preparing a compound semiconductor crystal by continuous LEC and VGF combination after injection synthesis, including: step A, vacuuming a system for preparing compounds and filling the system with an inert gas; step B, heating to melt the metallic raw material and boron oxide I in a synthesis crucible; step C, heating to melt boron oxide II, and moving the synthesis injection system downwards to move the end of the injection synthesis tube until the metallic raw material in the crucible is synthesized into a first melt; step D, slowly reducing the pressure inside the VGF crucible so that the first melt enters the VGF crucible to form a second melt; etc. In the present invention, the upper part is a VGF growth part and the lower part is a synthesis part; the synthesis part entering the VGF growth part by reverse sucking, while the VGF growth part is configured with a seed crystal rod and an observation system, and also can be subjected to gas control. At the beginning, LEC seeding and diameter enlarging at a high temperature gradient are implemented, and then the grown crystal is used for VGF crystal growth at a low temperature gradient, so that a high-quality crystal with low defects can be prepared with high yield.
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公开(公告)号：US20220081799A1
公开(公告)日：2022-03-17
申请号：US17415952
申请日：2020-09-10
发明人： Niefeng SUN , Shujie WANG , Yanlei SHI , Huimin SHAO , Lijie FU , Xiaolan LI , Yang WANG , Senfeng XU , Huisheng LIU , Tongnian SUN
摘要： The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis. The method has the advantages of short reaction time, high efficiency and raw material saving, which can effectively reduce the risk of contamination of materials, saves procedures and reduces the material preparation cost.
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公开(公告)号：US20240035192A1
公开(公告)日：2024-02-01
申请号：US17797395
申请日：2021-07-05
发明人： Shujie WANG , Niefeng SUN , Yang WANG , Xiaolan LI , Yanlei SHI , Huimin SHAO , Lijie FU , Zheng LIU , Tongnian SUN , Huisheng LIU
摘要： A polishing device for an indium phosphide substrate and a polishing process are provided, which belong to the technical field of polishing of indium phosphide. The polishing device includes an electrolyzer, and further includes an anode disc supporting rod positioned at a center position of a bottom of the electrolyzer by virtue of an anode lifting mechanism; an anode disc hinged to an upper end of the anode disc supporting rod; a cathode disc supporting rod positioned above the anode disc by virtue of a cathode lifting mechanism; a cathode disc arranged at a lower end of the cathode disc supporting rod; a graphite electrode plate arranged on the anode disc by virtue of a connection mechanism; a group of planet gears arranged on an upper end surface of the graphite electrode plate by virtue of an intermediate driving mechanism; an anode rotation driving mechanism connected to the intermediate driving mechanism; a cathode rotation driving mechanism connected to the cathode disc supporting rod; and a polishing direct current (DC) power supply respectively connected to contacts of the anode disc supporting rod and the cathode disc supporting rod by virtue of wires. By improving the structure of the device and the manufacturing process, a requirement for the environment in the polishing process of indium phosphide is greatly reduced, and electrochemical and mechanical dual-polishing is achieved.
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4.发明申请公开(公告)号：US20230038976A1
公开(公告)日：2023-02-09
申请号：US17880597
申请日：2022-08-03
发明人： Jian JIANG , Niefeng SUN , Tongnian SUN , Shujie WANG , Huimin SHAO , Lijie FU , Yanlei SHI , Xiaolan LI
摘要： A rocking type seed crystal surface corrosion, cleaning and drying device and a process method belong to the technical field of semiconductor crystal growth, comprising a corrosion tank and a matched corrosion tank cover, a seed crystal support platform arranged at a middle position of the bottom of the corrosion tank, and a high-purity hot nitrogen introduction short straight pipe, an corrosive liquid introduction short straight pipe, a deionized water introduction short straight pipe and an overflow liquid discharge short straight pipe matched with and arranged at both sides of the corrosion tank, wherein free ends of the high-purity hot nitrogen introduction short straight pipe, the corrosive liquid introduction short straight pipe and the deionized water introduction short straight pipe are all provided with switch stop valves; the device further comprises a rocking mechanism provided at the bottom of the corrosion tank; and the seed crystal support platform comprises a support frame symmetrically distributed on both sides of the vertical central axis of the corrosion tank and positioned at the bottom of the corrosion tank, a seed crystal support wheel mounted on an upper end of the support frame via a rotating shaft, and a matched seed crystal support wheel limiting mechanism. Adequate corrosion can be performed on the entire seed crystal surface, and the cleaning and drying processes of the seed crystal in the subsequent process can be combined organically to avoid secondary contamination of the seed crystal in the subsequent process.
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公开(公告)号：US20220074073A1
公开(公告)日：2022-03-10
申请号：US17415962
申请日：2020-09-25
发明人： Shujie WANG , Niefeng SUN , Yanlei SHI , Huimin SHAO , Xiaolan LI , Yang WANG , Lijie FU , Senfeng XU , Jian JIANG , Huisheng LIU , Tongnian SUN
IPC分类号： C30B33/06
摘要： Disclosed is an apparatus for preparing a large-size single crystal, which relates to the field of semiconductor material preparation, and more particularly, to an apparatus for preparing a large-size single crystal from a plurality of small-size single crystals by connecting them in solid states. The apparatus includes a hydrocooling furnace, a solid connection chamber hermetically disposed in the hydrocooling furnace, and combined fixtures provided in the solid connection chamber, wherein a plurality of crystal pieces are fixed by the combined fixtures, a top column or a stress block is used for pressing the crystal piece through the combined fixtures, a heating wire surrounding the solid connection chamber is provided in the hydrocooling furnace, a vacuum tube is communicated with the solid connection chamber, and a thermocouple is disposed close to the combined fixtures. The present disclosure is advantageous in that: 1, single crystal pieces with a small size can be connected and prepared into a single crystal with a larger size, 2, in the preparation process, the problems in the conventional single crystal growth process, such as twinning and polycrystallization, can be excluded from consideration, 3, the equipment is simple, and 4, preparation of single crystals with any size is possible theoretically.
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公开(公告)号：US20230055938A1
公开(公告)日：2023-02-23
申请号：US17797073
申请日：2020-09-10
发明人： Lijie FU , Niefeng SUN , Shujie WANG , Xiaolan LI , Xin ZHANG , Xiaodan ZHANG , Yanlei SHI , Huimin SHAO , Yang WANG
摘要： The present invention relates to a process for synthesizing indium phosphide by liquid phosphorus injection method, which belongs to the field of semiconductor technology. The method comprises: converting gaseous phosphorus into liquid phosphorus through a condenser, injecting the liquid phosphorus into an indium melt while preventing phosphorus vaporization by randomly delivering a low temperature inert gas, and causing an instantaneous reaction between the liquid phosphorus and the liquid indium melt, so that an indium phosphide melt can be synthesized at a relatively low temperature, with advantages of high efficiency, high purity, precise proportioning, large capacity, aiding in the growth of a phosphorus-rich indium phosphide polycrystal and facilitating the growth of an indium phosphide monocrystal. The method includes the steps of indium cleaning, phosphorus charging, furnace loading, communication of condenser, synthesis, preparation of crystals, etc.
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公开(公告)号：US20210285123A1
公开(公告)日：2021-09-16
申请号：US16627919
申请日：2018-12-21
发明人： Shujie WANG , Niefeng SUN , Tongnian SUN , Huisheng LIU , Yanlei SHI , Huimin SHAO , Lijie FU , Jian JIANG , Xiaodan ZHANG , Xiaolan LI , Yang WANG
摘要： The invention discloses a device and a method for continuous VGF crystal growth through reverse injection synthesis, relating to a device for preparing a semiconductor crystal and growing a single crystal, in particular to a method and a device for continuously growing the crystal in situ by using a VGF method and reverse injection synthesis. The device includes a furnace body, a crucible, a heat preservation system, a heating system, a temperature control system and an gas pressure regulation system, wherein the crucible is arranged in the furnace body, has a synthesis unit at its upper part, and has a crystal growth unit and a seed crystal unit at its lower part, and the synthesis unit is communicated with the crystal growth unit through capillary pores. Red phosphorus and boron oxide are put into the growth unit, indium and boron oxide are put into the synthesis unit, solid seed crystals are put into the seed crystal unit, and temperature and pressure are controlled to accomplish material synthesis and in-situ crystal growth. According to the invention, the capillary pores are used, the temperature and the pressure are controlled, the phosphorus bubbles rise to the indium melt in the material synthesis stage, rendering a full fusion of the two substances, and after the phosphorus gasification, the indium-phosphorus melt drops into the growth unit to finish the in-situ growth of the crystal.
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8.发明公开公开(公告)号：US20240352624A1
公开(公告)日：2024-10-24
申请号：US18577074
申请日：2021-12-08
发明人： Niefeng SUN , Shujie WANG , Senfeng XU , Yanlei SHI , Huimin SHAO , Lijie FU , Aimin BU , Xiaolan LI , Yang WANG
摘要： Device and method for immersed synthesis and continuous growth of phosphides under a magnetic field are disclosed in the field of semiconductor material preparation. In particular, device and method for synthesizing and growing semiconductor phosphides by means of immersing phosphorus into a metal melt under the action of a static magnetic field are disclosed. The device includes a furnace body, an injection synthesis system and a static magnetic field generator. The method includes A, heating the crucible to melt the metal and a covering material boron oxide in the crucible; B, immersing red phosphorus into the crucible; C, applying a static magnetic field surrounding the crucible, and adjusting the temperature gradient to start the synthesis; and D, performing crystal growth after completion of the synthesis. With the method provided by the present invention, the red phosphorus sinks into the melt in the form of a solid and floats upward from the bottom of the crucible after gasification, solving problems such as sucking-back generated by use of phosphorus bubbles; the transverse static magnetic field suppresses the bubble up-floating rate while suppressing the melt convection in the direction of the temperature gradient, so that the synthesis process is smoother and more rapid.
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公开(公告)号：US20240229291A1
公开(公告)日：2024-07-11
申请号：US18291881
申请日：2021-12-08
发明人： Shujie WANG , Niefeng SUN , Yanlei SHI , Huimin SHAO , Senfeng XU , Lijie FU , Yang WANG , Xiaolan LI , Xin OU , Ruiliang SONG , Huisheng LIU , Tongnian SUN
CPC分类号： C30B15/02 , C30B15/002 , C30B15/10 , C30B15/22 , C30B29/40
摘要： A system and method for growing a large-size compound semiconductor single crystal belong to the field of single crystal preparation, in particular to a system and method for preparing a large-size, especially ultra-long compound semiconductor single crystal. The large-size single crystal growth system includes a crystal growth space control device and a raw material injection device within a furnace body. The raw materials are injected in the raw material synthesis and crystal growth processes, and the growth space is adjusted according to the length of the single crystal. Due to the existence of multiple times of necking treatment, it can reduce the thermal stress of the crystal itself, to prevent breakage as the crystal grows too long, while substantially reducing the generation of defects and the extension of the original defects during the multiple growth processes; and such structure can be free from the limitation of the size of high-pressure preparation apparatuses. The raw material loading and injection system can realize cooling of the loading and injection system to enable continuous synthesis or intermittent synthesis.
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公开(公告)号：US20230069057A1
公开(公告)日：2023-03-02
申请号：US17797063
申请日：2021-07-05
发明人： Yanlei SHI , Niefeng SUN , Shujie WANG , Lijie FU , Huimin SHAO , Hongfei ZHAO , Yaqi LI , Huisheng LIU , Tongnian SUN , Yong KANG , Xiaodan ZHANG , Xin ZHANG , Jian JIANG , Xiaolan LI , Yang WANG , Jing XUE
IPC分类号： C30B15/00
摘要： A growth device and method for low-stress crystals are provided, which relate to the field of preparation of crystals, in particular to a device and method for preparing low-stress and low-defect crystals by using a pulling method. The growth device includes a furnace body; a crucible and a heating and insulation system which are arranged at a bottom of the furnace body; a crystal pulling mechanism, and a quartz observation window; the device further includes a liftable heating mantle mechanism including a heating mantle body, a heating mantle supporting component, a heating wire arranged around the heating mantle body, and a heating mantle lifting mechanism. The method includes: after crystals are pulled out of a melt, covering the crystals with a liftable heating mantle mechanism. By the use of the present invention, a temperature gradient inside the crystals in a crystal growth process and in a cooling process after the crystals are pulled can be reduced, thereby reducing the crystal stress, reducing defects, and avoiding the crystals from being cracked; and at the same time, the temperature gradient in the melt is maintained, thereby guaranteeing a stable crystal growth process and ensuring the yield of the crystals.
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