High-contrast ferroelectric liquid crystal cell

    公开(公告)号:US12019345B2

    公开(公告)日:2024-06-25

    申请号:US18004571

    申请日:2021-09-10

    摘要: One or more devices, systems, methods and/or apparatus to facilitate suppression of fringe field effect, such as for diffraction grating and/or display purposes. In one embodiment, a ferroelectric liquid crystal (FLC) element can comprise a pair of conductive substrates, a FLC layer having a helical pitch and positioned between the conductive substrates, one or more spacers fixedly positioned between the conductive substrates, and an alignment layer positioned between the FLC layer and one of the conductive substrates. The alignment layer can be disposed at least partially contiguous with the FLC layer. The FLC layer can comprise a chiral smectic C* liquid crystal layer having at least one of a helical pitch smaller than an average cell gap of the FLC layer, or an average helical pitch of the FLC layer being smaller than an average thickness of the FLC layer between the conductive substrates.

    HIGH-CONTRAST FERROELECTRIC LIQUID CRYSTAL CELL

    公开(公告)号:US20230244102A1

    公开(公告)日:2023-08-03

    申请号:US18004571

    申请日:2021-09-10

    摘要: One or more devices, systems, methods and/or apparatus to facilitate suppression of fringe field effect, such as for diffraction grating and/or display purposes. In one embodiment, a ferroelectric liquid crystal (FLC) element can comprise a pair of conductive substrates, a FLC layer having a helical pitch and positioned between the conductive substrates, one or more spacers fixedly positioned between the conductive substrates, and an alignment layer positioned between the FLC layer and one of the conductive substrates. The alignment layer can be disposed at least partially contiguous with the FLC layer. The FLC layer can comprise a chiral smectic C* liquid crystal layer having at least one of a helical pitch smaller than an average cell gap of the FLC layer, or an average helical pitch of the FLC layer being smaller than an average thickness of the FLC layer between the conductive substrates.