公开(公告)号：US20250084309A1

公开(公告)日：2025-03-13

申请号：US18707255

申请日：2023-10-02

Applicant: TOKUYAMA CORPORATION

Inventor： Yuzan SUZUKI ,  Yuki KIKKAWA ,  Tomoaki SATO

IPC: C09K13/04 ,  H01L21/3213

Abstract: Provided is a treatment liquid for a semiconductor to be used for removing a transition metal-containing substance on a substrate, the treatment liquid for a semiconductor containing a specific halogen oxyacid ion, at least one ion selected from the group consisting of a bromide ion, a bromite ion, a bromate ion, a chloride ion, a chlorate ion, an iodate ion, an iodide ion, and a triiodide ion, and at least one metal selected from the group consisting of Ca, Na, K, Cr, Ni, and Al, wherein a concentration of any one metal of Ca, Na, K, Cr, Ni, or Al is 0.1 ppt or more and 200 ppt or less.