INHIBITOR FOR RuO4 GAS GENERATION AND METHOD FOR INHIBITING RuO4 GAS GENERATION

    公开(公告)号:US20210340095A1

    公开(公告)日:2021-11-04

    申请号:US17266283

    申请日:2020-09-23

    Abstract: Provided are an inhibitor for RuO4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO4 gas. Specifically, provided is an inhibitor for RuO4 gas generation for inhibiting a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuO4 gas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.

    TREATMENT LIQUID FOR SEMICONDUCTORS AND METHOD FOR PRODUCING SAME

    公开(公告)号:US20230126771A1

    公开(公告)日:2023-04-27

    申请号:US17915697

    申请日:2021-03-31

    Abstract: A treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid containing hypobromite ions. Also provided is a treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid characterized by being formed by adding and mixing at least a bromine-containing compound, an oxidizing agent, a base compound, and water, wherein relative to a total mass, an added amount of the bromine-containing compound is 0.008 mass % or more and less than 10 mass % as an amount of bromine element, and an added amount of the oxidizing agent is 0.1 mass ppm or more and 20 mass % or less; and pH at 25° C. is 8 or higher and 14 or lower. Further provided is a method for producing the treatment liquid for a semiconductor.

    TREATMENT LIQUID FOR SEMICONDUCTOR WITH RUTHENIUM AND METHOD OF PRODUCING THE SAME

    公开(公告)号:US20210388508A1

    公开(公告)日:2021-12-16

    申请号:US17261387

    申请日:2020-07-08

    Abstract: Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

    METHOD FOR PROCESSING SEMICONDUCTOR CONTAINING TRANSITION METAL, METHOD FOR PRODUCING SEMICONDUCTOR CONTAINING TRANSITION METAL, AND PROCESSING LIQUID FOR SEMICONDUCTORS

    公开(公告)号:US20240055272A1

    公开(公告)日:2024-02-15

    申请号:US18269195

    申请日:2021-12-20

    CPC classification number: H01L21/32134 H01L21/02068 H01L22/12

    Abstract: An object of the present invention is to provide a method for producing a semiconductor containing a transition metal with a flat surface, by suppressing loss of flatness (surface roughening) of the transition metal surface, which is caused by anisotropic etching resulting from different etching rates among different crystal planes of the transition metal during etching of the transition metal film with crystal planes of various orientations exposed at the surface. According to the present invention, the problem is solved by any one of the following: a processing method for a semiconductor containing a transition metal, the method including a step of etching the transition metal at an etching amount ratio of 0.1 or greater and 10 or less, the etching amount ratio being a ratio of an etching amount in one crystal plane of the transition metal to an etching amount in another crystal plane of the transition metal; a processing method for a semiconductor containing a transition metal, the method including etching the transition metal, and measuring an etching amount ratio of the transition metal; and a processing liquid for semiconductors, the processing liquid containing an amphoteric surfactant or an amine, the amphoteric surfactant being betaine, imidazoline, glycine or an amine oxide.

    TREATMENT LIQUID FOR SEMICONDUCTOR WITH RUTHENIUM AND METHOD OF PRODUCING THE SAME

    公开(公告)号:US20230257887A1

    公开(公告)日:2023-08-17

    申请号:US18139559

    申请日:2023-04-26

    CPC classification number: C23F1/40 H01L21/30604

    Abstract: Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

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