公开(公告)号：US20200211838A1

公开(公告)日：2020-07-02

申请号：US16604744

申请日：2018-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto MURAMATSU ,  Yusuke SAITO ,  Hisashi GENJIMA ,  Hiroyuki FUJII

IPC: H01L21/02 ,  H01L21/324 ,  B05D3/06

Abstract: A technique for obtaining good film quality in forming a silicon-oxide-containing insulating film as a coating film on a substrate. A coating liquid containing polysilazane is applied to a wafer, a solvent in the coating liquid is volatilized, and then the coating film is irradiated with ultraviolet rays under a nitrogen atmosphere before performing a curing process. Thus, dangling bonds are likely to be formed at hydrolyzed portions in polysilazane. Since dangling bonds are formed in advance at portions in silicon to be hydrolyzed, productivity of hydroxyl groups is enhanced. That is, since an energy required for hydrolysis is reduced, the number of the portions remaining without being hydrolyzed is reduced even when the curing process is performed at a low temperature. Therefore, dehydration synthesis occurs efficiently, which increases a crosslinking rate and makes it possible to form a dense (good film quality) insulating film.

公开(公告)号：US20230077937A1

公开(公告)日：2023-03-16

申请号：US17798992

申请日：2021-02-05

Applicant: Tokyo Electron Limited

Inventor： Yusuke SAITO ,  Makoto MURAMATSU ,  Hiroyuki FUJII

IPC: H01L21/033 ,  H01L21/027 ,  G03F7/11

Abstract: A substrate treatment method for treating a substrate, includes: applying a coating solution containing an organometallic complex, a solvent, and an additive to the substrate to form a solution film of the coating solution; heating the substrate on which the solution film of the coating solution has been formed, to form an organic constituent-containing metal oxide film being a metal oxide film containing an organic constituent contained in the additive; performing dry etching using the organic constituent-containing metal oxide film as a mask; removing the organic constituent in the organic constituent-containing metal oxide film after the dry etching; and removing, by wet etching, a film obtained by removing the organic constituent from the organic constituent-containing metal oxide film.