公开(公告)号：US20250140525A1

公开(公告)日：2025-05-01

申请号：US19006494

申请日：2024-12-31

Applicant: Tokyo Electron Limited

Inventor： Masamichi NOMURA ,  Yusuke SAITO ,  Keisuke HIRAIDE

IPC: H01J37/32

Abstract: A plasma processing method using a plasma processing apparatus includes: acquiring a parameter including a first initial power value, an initial power application time, and an output suppress ratio; acquiring a processing recipe including a recipe set power value as a second initial power value; determining initial input power to an antenna for plasma excitation from either the first initial power value or the second initial power value, wherein when the first initial power value is determined as the initial input power, the method further includes: supplying the determined initial input power to the antenna for plasma excitation for at least a time duration equal to or greater than the initial power application time; and increasing an output of radio frequency power supplied to the antenna for plasma excitation stepwise from the initial input power to the recipe set power value.

公开(公告)号：US20160013065A1

公开(公告)日：2016-01-14

申请号：US14865217

申请日：2015-09-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhiro KUBOTA ,  Yusuke SAITO ,  Masanobu HONDA

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  H01L21/66

CPC classification number: H01L21/3065 ,  C23C16/4585 ,  H01J37/32091 ,  H01J37/32522 ,  H01J37/32642 ,  H01J2237/3343 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68721 ,  H01L22/26

Abstract: Provided is a technology that can obtain high in-plane uniformity of etching while etching a substrate using plasma. A proper temperature of a focus ring capable of performing etching having high in-plane uniformity is identified in advance for each of the multilayers formed on a wafer, the temperature is reflected to a processing recipe as a set temperature, and a heating mechanism and a cooling mechanism are controlled such that the temperature of the focus ring is within an appropriate temperature range including the set temperature thereof for each of the layers to be successively etched. Heat of the focus ring is radiated using a laser and is discharged to a supporting table without using a heater, to independently separate the heating mechanism and the cooling mechanism from each other.

Abstract translation: 提供了一种在使用等离子体蚀刻衬底时可以获得高的面内均匀性的技术。 对于形成在晶片上的各层，预先确定能够进行具有高的面内均匀性的蚀刻的聚焦环的适当温度，将温度反映为加工配方作为设定温度，加热机构和 控制冷却机构，使得对于要连续蚀刻的每个层，聚焦环的温度在包括其设定温度的适当温度范围内。 聚焦环的热量使用激光辐射，并且在不使用加热器的情况下被排出到支撑台上，以将加热机构和冷却机构彼此独立地分开。

公开(公告)号：US20200211838A1

公开(公告)日：2020-07-02

申请号：US16604744

申请日：2018-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto MURAMATSU ,  Yusuke SAITO ,  Hisashi GENJIMA ,  Hiroyuki FUJII

IPC: H01L21/02 ,  H01L21/324 ,  B05D3/06

Abstract: A technique for obtaining good film quality in forming a silicon-oxide-containing insulating film as a coating film on a substrate. A coating liquid containing polysilazane is applied to a wafer, a solvent in the coating liquid is volatilized, and then the coating film is irradiated with ultraviolet rays under a nitrogen atmosphere before performing a curing process. Thus, dangling bonds are likely to be formed at hydrolyzed portions in polysilazane. Since dangling bonds are formed in advance at portions in silicon to be hydrolyzed, productivity of hydroxyl groups is enhanced. That is, since an energy required for hydrolysis is reduced, the number of the portions remaining without being hydrolyzed is reduced even when the curing process is performed at a low temperature. Therefore, dehydration synthesis occurs efficiently, which increases a crosslinking rate and makes it possible to form a dense (good film quality) insulating film.

公开(公告)号：US20230077937A1

公开(公告)日：2023-03-16

申请号：US17798992

申请日：2021-02-05

Applicant: Tokyo Electron Limited

Inventor： Yusuke SAITO ,  Makoto MURAMATSU ,  Hiroyuki FUJII

IPC: H01L21/033 ,  H01L21/027 ,  G03F7/11

Abstract: A substrate treatment method for treating a substrate, includes: applying a coating solution containing an organometallic complex, a solvent, and an additive to the substrate to form a solution film of the coating solution; heating the substrate on which the solution film of the coating solution has been formed, to form an organic constituent-containing metal oxide film being a metal oxide film containing an organic constituent contained in the additive; performing dry etching using the organic constituent-containing metal oxide film as a mask; removing the organic constituent in the organic constituent-containing metal oxide film after the dry etching; and removing, by wet etching, a film obtained by removing the organic constituent from the organic constituent-containing metal oxide film.