公开(公告)号：US20250092514A1

公开(公告)日：2025-03-20

申请号：US18970324

申请日：2024-12-05

Applicant: Tokyo Electron Limited

Inventor： Masanobu IGETA ,  Yutaka TAKAHASHI ,  Tatsuya TAMURA ,  Yusuke SUZUKI ,  Toyohiro KAMADA ,  Kenichi OYAMA ,  Reiko TSUZUKI ,  Seiji NAGAHARA ,  Makoto MURAMATSU ,  Satoru MURAMATSU ,  Satoru SHIMURA

IPC: C23C16/40 ,  C23C16/56 ,  G03F7/20 ,  G03F7/40

Abstract: A substrate processing method includes forming a metal oxide resist film on a substrate including an underlayer; forming a pattern in the metal oxide resist film; modifying the metal oxide resist film in which the pattern has been formed; and etching the underlayer by using the modified metal oxide resist film as a mask.

公开(公告)号：US20230077937A1

公开(公告)日：2023-03-16

申请号：US17798992

申请日：2021-02-05

Applicant: Tokyo Electron Limited

Inventor： Yusuke SAITO ,  Makoto MURAMATSU ,  Hiroyuki FUJII

IPC: H01L21/033 ,  H01L21/027 ,  G03F7/11

Abstract: A substrate treatment method for treating a substrate, includes: applying a coating solution containing an organometallic complex, a solvent, and an additive to the substrate to form a solution film of the coating solution; heating the substrate on which the solution film of the coating solution has been formed, to form an organic constituent-containing metal oxide film being a metal oxide film containing an organic constituent contained in the additive; performing dry etching using the organic constituent-containing metal oxide film as a mask; removing the organic constituent in the organic constituent-containing metal oxide film after the dry etching; and removing, by wet etching, a film obtained by removing the organic constituent from the organic constituent-containing metal oxide film.

公开(公告)号：US20240038533A1

公开(公告)日：2024-02-01

申请号：US18022213

申请日：2021-08-10

Applicant: Tokyo Electron Limited

Inventor： Hiroki TADATOMO ,  Makoto MURAMATSU ,  Kenichi UEDA ,  Arnaud Alain Jean DAUENDORFFER ,  Tomoya ONITSUKA ,  Keisuke YOSHIDA

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/0274 ,  H01L21/31144 ,  H01L21/68742 ,  H01L21/67098

Abstract: The present disclosure provides a substrate processing method and a substrate processing apparatus which are effective in preventing pattern collapse of an uneven pattern. The substrate processing method according to an exemplary embodiment includes replacing a liquid in a recess of a substrate having an uneven pattern of a negative type resist including a metal formed on a surface of the substrate with a solid-state stiffener, and subjecting the substrate to a molecular weight reduction processing that reduces the number of intermolecular bonds contained in the solid-state stiffener while maintaining the solid-state stiffener in a solid state.

公开(公告)号：US20190341255A1

公开(公告)日：2019-11-07

申请号：US16516344

申请日：2019-07-19

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Tadatoshi TOMITA ,  Hisashi GENJIMA ,  Gen YOU ,  Takahiro KITANO

IPC: H01L21/033 ,  H01L21/67 ,  H01J37/32 ,  G03F7/00 ,  H01L29/66 ,  D06M14/18 ,  H01L21/02 ,  H01L29/51 ,  H01L21/31 ,  H01L21/027 ,  G03F7/40 ,  G03D5/00 ,  C08J7/18

Abstract: A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

公开(公告)号：US20160293403A1

公开(公告)日：2016-10-06

申请号：US14388887

申请日：2013-11-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto MURAMATSU ,  Takahiro KITANO ,  Tadatoshi TOMITA ,  Keiji TANOUCHI

IPC: H01L21/027 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02

CPC classification number: H01L21/0271 ,  H01L21/02118 ,  H01L21/02337 ,  H01L21/31138 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/68742

Abstract: The present invention, when forming a pattern on a substrate, forms a film of a block copolymer containing at least two polymers on the substrate, heats the film of the block copolymer under a solvent vapor atmosphere to subject the block copolymer to phase separation, and removes one of the polymers in the film of the phase-separated block copolymer, thereby accelerating fluidization of the polymers of the block copolymer to enable acceleration of the phase separation.

Abstract translation: 本发明当在基片上形成图形时，在基片上形成含有至少两种聚合物的嵌段共聚物的膜，在溶剂蒸汽气氛下加热嵌段共聚物的膜，使嵌段共聚物相分离， 除去相分离嵌段共聚物的膜中的一种聚合物，从而促进嵌段共聚物的聚合物的流化，从而能够加速相分离。

公开(公告)号：US20170133235A1

公开(公告)日：2017-05-11

申请号：US15129000

申请日：2015-04-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto MURAMATSU ,  Takahiro KITANO ,  Tadatoshi TOMITA ,  Gen YOU ,  Takanori NISHI

IPC: H01L21/308 ,  H01L21/027 ,  G03F7/09 ,  G03F7/40 ,  G03F7/20 ,  G03F7/38 ,  G03F7/30 ,  H01L21/306 ,  G03F7/16

CPC classification number: H01L21/3086 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/0276 ,  H01L21/30604 ,  Y10S977/887 ,  Y10S977/943

Abstract: A substrate treatment method includes: forming a plurality of circular patterns of a resist film on a substrate; thereafter applying a first block copolymer; then phase-separating the first block copolymer into a hydrophilic polymer and a hydrophobic polymer; thereafter selectively removing the hydrophilic polymer; then selectively removing the resist film from a top of the substrate; thereafter applying a second block copolymer to the substrate; then phase-separating the second block copolymer into a hydrophilic polymer and a hydrophobic polymer; and thereafter selectively removing the hydrophilic polymer from the phase-separated second block copolymer. A ratio of a molecular weight of the hydrophilic polymer in the first block copolymer and the second block copolymer is 20% to 40%.

公开(公告)号：US20220316059A1

公开(公告)日：2022-10-06

申请号：US17628682

申请日：2020-07-13

Applicant: Tokyo Electron Limited

Inventor： Koukichi HIROSHIRO ,  Makoto MURAMATSU ,  Koji KAGAWA ,  Kenji SEKIGUCHI

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46

Abstract: A substrate processing method includes a protective film forming step, an insulating material depositing step, a protective film removing step, and a metal material depositing step. In the protective film forming step, a protective film is formed on a metal film among the metal film and an insulating film exposed on the surface of a substrate, using a film-forming material that is selectively adsorbed onto the metal film. In the insulating material depositing step, after the protective film forming step, an insulating material is deposited on the surface of the insulating film using an atomic layer deposition method. In the protective film removing step, the protective film is removed from the surface of the metal film after the insulating material depositing step. In the metal material depositing step, a metal material is deposited on the metal film after the protective film removing step.

公开(公告)号：US20210159074A1

公开(公告)日：2021-05-27

申请号：US16645712

申请日：2018-08-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto MURAMATSU ,  Hisashi GENJIMA

IPC: H01L21/02 ,  C23C18/14

Abstract: There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.

公开(公告)号：US20200211838A1

公开(公告)日：2020-07-02

申请号：US16604744

申请日：2018-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto MURAMATSU ,  Yusuke SAITO ,  Hisashi GENJIMA ,  Hiroyuki FUJII

IPC: H01L21/02 ,  H01L21/324 ,  B05D3/06

Abstract: A technique for obtaining good film quality in forming a silicon-oxide-containing insulating film as a coating film on a substrate. A coating liquid containing polysilazane is applied to a wafer, a solvent in the coating liquid is volatilized, and then the coating film is irradiated with ultraviolet rays under a nitrogen atmosphere before performing a curing process. Thus, dangling bonds are likely to be formed at hydrolyzed portions in polysilazane. Since dangling bonds are formed in advance at portions in silicon to be hydrolyzed, productivity of hydroxyl groups is enhanced. That is, since an energy required for hydrolysis is reduced, the number of the portions remaining without being hydrolyzed is reduced even when the curing process is performed at a low temperature. Therefore, dehydration synthesis occurs efficiently, which increases a crosslinking rate and makes it possible to form a dense (good film quality) insulating film.

公开(公告)号：US20180269072A1

公开(公告)日：2018-09-20

申请号：US15763529

申请日：2016-10-20

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Tadatoshi TOMITA ,  Hisashi GENJIMA ,  Takahiro KITANO

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/67 ,  G03F7/20 ,  G03F7/30 ,  G03F7/16 ,  G03F7/42 ,  G03F7/38

CPC classification number: H01L21/31138 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/30 ,  G03F7/38 ,  G03F7/422 ,  H01L21/0271 ,  H01L21/0276 ,  H01L21/31133 ,  H01L21/67069 ,  H01L21/6715 ,  H01L21/67167 ,  H01L21/67178 ,  H01L21/67225

Abstract: A substrate processing method of processing a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the substrate processing method includes: a block copolymer coating step of applying the block copolymer onto the substrate on which a predetermined projecting and recessed pattern is formed, to form a coating film of the block copolymer; a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer; a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer; and after the block copolymer coating step and before the polymer removal step, a film thickness reduction step of reducing a film thickness of the coating film of the block copolymer.