公开(公告)号：US20210305032A1

公开(公告)日：2021-09-30

申请号：US17206768

申请日：2021-03-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota ISHIBASHI ,  Hiroyuki TOSHIMA ,  Hiroyuki IWASHITA ,  Tatsuo HIRASAWA

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/35

Abstract: There is provided a substrate processing method of a substrate processing apparatus. The substrate processing apparatus includes at least two targets, magnet-moving mechanisms disposed in one-to-one correspondence with the at least two targets, each of the magnet-moving mechanisms being configured to reciprocate a magnet in a first direction on a back surface of each target, and a substrate moving mechanism configured to move a substrate in a second direction orthogonal to the first direction. The method includes causing the magnet-moving mechanisms to reciprocate the magnets at different phases with each other.

公开(公告)号：US20210296103A1

公开(公告)日：2021-09-23

申请号：US17206738

申请日：2021-03-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota ISHIBASHI ,  Tatsuo HIRASAWA ,  Hiroyuki TOSHIMA ,  Hiroyuki IWASHITA

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/04

Abstract: An example of a sputtering apparatus comprises a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, a shielding plate disposed between the first and the second target and the substrate and having a through-hole through which the sputter particles pass, and an obstructing mechanism. The through-hole has a first opening region through which the sputter particles emitted from the fit target pass and a second opening region through which the sputter particles emitted from the second target pass, and the obstructing mechanism is configured to obstruct the sputter particles emitted from the first target in passing through the second opening region and the sputter particles emitted in the second target from passing through the first opening region.

公开(公告)号：US20210207261A1

公开(公告)日：2021-07-08

申请号：US17143924

申请日：2021-01-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota ISHIBASHI ,  Hiroyuki TOSHIMA ,  Hiroyuki IWASHITA ,  Tatsuo HIRASAWA

IPC: C23C14/35

Abstract: A film forming apparatus includes a target holder that holds a target facing a substrate and extending in a predetermined direction on a horizontal plane, a magnet unit including a pair of magnet assemblies each having magnets and disposed at a back side of the target holder, a pair of shielding members disposed between the target and the substrate to extend from the target toward the substrate, and a moving mechanism configured to reciprocate the magnet unit between one end and the other end in the predetermined direction. The magnet assemblies are arranged along the predetermined direction, and each of the shielding members is disposed, in plan view, on a boundary line between a first region where only one of the magnet assemblies passes during a reciprocating motion of the magnet unit and a second region where both of the magnet assemblies pass therethrough during the reciprocating motion.