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1.发明申请公开(公告)号：US20170372951A1
公开(公告)日：2017-12-28
申请号：US15627478
申请日：2017-06-20
Applicant: TOKYO ELECTRON LIMITED
Inventor： Hiroyuki TOSHIMA , Tatsuo HATANO , Shinji FURUKAWA , Naoki WATANABE , Naoyuki SUZUKI
IPC: H01L21/768 , H01J37/34 , H01L21/687 , H01J37/32
CPC classification number: H01L21/76862 , H01J37/32715 , H01J37/32733 , H01J37/32899 , H01J37/3435 , H01L21/68764 , H01L21/76802 , H01L21/76843 , H01L21/76871 , H01L21/76879
Abstract: There is provided a method for performing a pre-treatment to form a copper wiring in a recess formed in a substrate, which includes forming a barrier layer on a surface of the substrate that defines the recess, and forming a seed layer on the barrier layer. The method further includes at least one of etching the barrier layer and etching the seed layer. In the at least one of etching the barrier layer and etching the seed layer, the substrate is inclined with respect to an irradiation direction of ions while rotating the substrate.
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公开(公告)号：US20210305032A1
公开(公告)日：2021-09-30
申请号：US17206768
申请日：2021-03-19
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shota ISHIBASHI , Hiroyuki TOSHIMA , Hiroyuki IWASHITA , Tatsuo HIRASAWA
Abstract: There is provided a substrate processing method of a substrate processing apparatus. The substrate processing apparatus includes at least two targets, magnet-moving mechanisms disposed in one-to-one correspondence with the at least two targets, each of the magnet-moving mechanisms being configured to reciprocate a magnet in a first direction on a back surface of each target, and a substrate moving mechanism configured to move a substrate in a second direction orthogonal to the first direction. The method includes causing the magnet-moving mechanisms to reciprocate the magnets at different phases with each other.
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公开(公告)号：US20200071815A1
公开(公告)日：2020-03-05
申请号：US16346705
申请日：2017-10-23
Applicant: TOKYO ELECTRON LIMITED
Inventor： Hiroyuki TOSHIMA , Tatsuo HATANO , Tetsuya MIYASHITA , Shinji FURUKAWA , Junichi TAKEI
Abstract: A film-forming device according to one embodiment includes a chamber body, a support, a moving device, a shielding member, a first holder and a second holder, in the film-forming device, a substrate supported by the support is linearly moved. The shielding member is disposed above an area where the substrate is moved, and includes a slit extending in a direction perpendicular to a movement direction of the substrate. The first holder and the second holder hold a first target and a second target, respectively, above the shielding member. The first target and the second target are arranged symmetrically with respect to a vertical plane including a linear path on which the center of the substrate is moved.
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公开(公告)号：US20160071707A1
公开(公告)日：2016-03-10
申请号：US14842821
申请日：2015-09-01
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shinji FURUKAWA , Hiroyuki TOSHIMA , Tooru KITADA , Kanto NAKAMURA , Kazunaga ONO
CPC classification number: H01J37/3488 , H01J37/32715 , H01J37/32724 , H01J37/32733
Abstract: A processing apparatus includes a processing chamber, a rotatable mounting table, a cooling mechanism and a driving mechanism. A sputtering target is provided in the processing chamber. The rotatable mounting table is provided in the processing chamber and configured to mount thereon an object to be processed. The cooling mechanism is configured to cool the mounting table. The driving mechanism is configured to change a relative position of the mounting table with respect to the cooling mechanism. The driving mechanism changes a conductivity of heat from the mounting table to the cooling mechanism at least by switching a first state in which the mounting table and the cooling mechanism are separated from each other and a second state in which the mounting table and the cooling mechanism become close to each other.
Abstract translation: 处理装置包括处理室，可旋转安装台，冷却机构和驱动机构。 在处理室中设置溅射靶。 可旋转安装台设置在处理室中并且构造成在其上安装待处理物体。 冷却机构被配置为冷却安装台。 驱动机构被配置为改变安装台相对于冷却机构的相对位置。 至少通过将安装台和冷却机构分离的第一状态切换到安装台和冷却机构的第二状态，驱动机构将热量从安装台改变为冷却机构 互相靠近。
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公开(公告)号：US20220148863A1
公开(公告)日：2022-05-12
申请号：US17523783
申请日：2021-11-10
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shota ISHIBASHI , Hiroyuki TOSHIMA
Abstract: A sputtering apparatus is provided. The sputtering apparatus comprises a vacuum chamber in which a substrate is located; a target having one surface facing an inner surface of the vacuum chamber; a gas supplier configured to supply a gas for generating plasma in the vacuum chamber; a power supplier configured to supply a power to the target to generate the plasma, sputter the target, and form a film on the substrate; and an abnormality detector configured to detect abnormality caused by a temperature of the target.
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Patent Agency Ranking
公开(公告)号：US20200266063A1
公开(公告)日：2020-08-20
申请号：US16347182
申请日：2017-11-01
Applicant: Tokyo Electron Limited
Inventor： Hiroyuki TOSHIMA , Shinji FURUKAWA
IPC: H01L21/033
Abstract: In one embodiment, this hard mask for plasma etching is formed on a silicon-containing film. The hard mask is an amorphous film, and contains tungsten and silicon. The ratio of the concentration of tungsten and the concentration of silicon in the surface of the hard mask can be within the range between a ratio specifying that the concentration of tungsten is 35 at % and the concentration of silicon is 65 at % and a ratio specifying that the concentration of tungsten is 50 at % and the concentration of silicon is 50 at %.
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公开(公告)号：US20200227273A1
公开(公告)日：2020-07-16
申请号：US16743466
申请日：2020-01-15
Applicant: TOKYO ELECTRON LIMITED
Inventor： Hiroyuki TOSHIMA , Shinji FURUKAWA , Shota ISHIBASHI
IPC: H01L21/311 , H01L21/3065 , H01L21/027 , H01L21/203 , H01L21/285 , C23C14/14 , C23C14/22
Abstract: There is provided a hard mask formed on a substrate for manufacturing a semiconductor device, the hard mask including a film made of a compound which is composed of Ru and an element selected from Ti, Zr, Hf, V, Nb, Ta, Mo, W, and Si.
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公开(公告)号：US20200051796A1
公开(公告)日：2020-02-13
申请号：US16531782
申请日：2019-08-05
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masato SHINADA , Hiroyuki TOSHIMA
Abstract: A film-forming apparatus comprises: a processing chamber defining a processing space, a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space, a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass, a substrate support configured to support a substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space, a substrate moving mechanism configured to linearly move the substrate supported on the substrate support, and a controller configured to control the emission of sputter-particles from the first sputter-particle emitter and the second sputter-particle emitter while controlling the substrate moving mechanism to move the substrate linearly.
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公开(公告)号：US20200048759A1
公开(公告)日：2020-02-13
申请号：US16534116
申请日：2019-08-07
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masato SHINADA , Hiroyuki TOSHIMA
Abstract: There is provided a film forming apparatus, including: a processing chamber having a processing space in which a film forming process is performed on a substrate; a substrate support part configured to support the substrate inside the processing chamber; at least one sputtering particle emission part including a target and configured to emit sputtering particles to the substrate from the target; and at least one etching particle emission part configured to emit etching particles having an etching action with respect to the substrate, wherein the sputtering particles emitted from the at least one sputtering particle emission part are deposited on the substrate to form a film, and a portion of the film is etched by the etching particles emitted from the at least one etching particle emission part.
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公开(公告)号：US20230051865A1
公开(公告)日：2023-02-16
申请号：US17975619
申请日：2022-10-28
Applicant: Tokyo Electron Limited
Inventor： Takuya SEINO , Yasushi KODASHIMA , Naoki WATANABE , Hiroyuki TOSHIMA , Masato SHINADA , Tetsuya MIYASHITA
Abstract: The PVD apparatus includes a chamber, a plurality of stages, a first target holder, a power supply mechanism, and a shield. The plurality of stages are provided inside the chamber, and each of the plurality of stages is configured to place at least one substrate on an upper surface thereof. The first target holder is configured to hold at least one target provided for one stage, the target being exposed to a space inside the chamber. The power supply mechanism supplies power to the target via the first target holder. The shield is provided inside the chamber and a part of the shield is disposed between a first stage and a second stage in the plurality of stages, and between a first processing space on the first stage and a second processing space on the second stage.
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