公开(公告)号：US20240021423A1

公开(公告)日：2024-01-18

申请号：US18350400

申请日：2023-07-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiko KOJIMA ,  Shota ISHIBASHI ,  Toru KITADA

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/50 ,  C23C14/34

CPC classification number: H01J37/3455 ,  H01J37/32715 ,  H01J37/3429 ,  C23C14/352 ,  C23C14/505 ,  C23C14/3407 ,  H01J2237/332

Abstract: There is a film forming apparatus comprising: a first holder holding a first target formed of a first material; a second holder holding a second target formed of a second material different from the first material; and a mounting table holding a substrate, the mounting table rotatable with a central axis of the mounting table as a rotation axis, wherein a distance from the central axis of the mounting table to a center of a sputter surface of the first target is different from a distance from the central axis of the mounting table to a center of a sputter surface of the second target.

公开(公告)号：US20210305032A1

公开(公告)日：2021-09-30

申请号：US17206768

申请日：2021-03-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota ISHIBASHI ,  Hiroyuki TOSHIMA ,  Hiroyuki IWASHITA ,  Tatsuo HIRASAWA

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/35

Abstract: There is provided a substrate processing method of a substrate processing apparatus. The substrate processing apparatus includes at least two targets, magnet-moving mechanisms disposed in one-to-one correspondence with the at least two targets, each of the magnet-moving mechanisms being configured to reciprocate a magnet in a first direction on a back surface of each target, and a substrate moving mechanism configured to move a substrate in a second direction orthogonal to the first direction. The method includes causing the magnet-moving mechanisms to reciprocate the magnets at different phases with each other.

公开(公告)号：US20240274436A1

公开(公告)日：2024-08-15

申请号：US18565486

申请日：2022-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota ISHIBASHI ,  Toru KITADA ,  Keiichi NAGASAKA

IPC: H01L21/02 ,  C23C14/02 ,  C23C14/08 ,  C23C14/34 ,  C23C14/54 ,  H01L21/67 ,  H01L29/786

CPC classification number: H01L21/02565 ,  C23C14/02 ,  C23C14/08 ,  C23C14/34 ,  C23C14/541 ,  H01L21/02658 ,  H01L21/67103 ,  H01L29/7869

Abstract: Provided are a film forming method in which oxygen defects are suppressed, and a substrate processing method. Provided is a film forming method having a step for cooling a substrate to a very-low-temperature state of 200 K or less, and a step for forming an oxide semiconductor film on the cooled substrate.

公开(公告)号：US20230175112A1

公开(公告)日：2023-06-08

申请号：US18076164

申请日：2022-12-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota ISHIBASHI ,  Toru KITADA

IPC: C23C14/04 ,  C23C14/14 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50

CPC classification number: C23C14/042 ,  C23C14/14 ,  C23C14/3407 ,  C23C14/351 ,  C23C14/50

Abstract: There is a method for forming a film including an alloy film containing multiple types of elements on a surface of a substrate using a film forming target made of the alloy film, comprising: (a) arranging the film forming target and a distribution improvement target; and (b) forming the film on the substrate by simultaneously or alternately sputtering the film forming target and the distribution improvement target, wherein the distribution improvement target is made of a distribution improvement film containing a non-uniform element among the multiple types of elements, and in step (b), a larger amount of the non-uniform element sputtered from the distribution improvement target is supplied to a portion where the distribution amount of the non-uniform element is small compared to a portion where the distribution amount of the non-uniform element is large when the film is formed on the substrate by the film forming target.

公开(公告)号：US20220148863A1

公开(公告)日：2022-05-12

申请号：US17523783

申请日：2021-11-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota ISHIBASHI ,  Hiroyuki TOSHIMA

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/54

Abstract: A sputtering apparatus is provided. The sputtering apparatus comprises a vacuum chamber in which a substrate is located; a target having one surface facing an inner surface of the vacuum chamber; a gas supplier configured to supply a gas for generating plasma in the vacuum chamber; a power supplier configured to supply a power to the target to generate the plasma, sputter the target, and form a film on the substrate; and an abnormality detector configured to detect abnormality caused by a temperature of the target.

公开(公告)号：US20210082777A1

公开(公告)日：2021-03-18

申请号：US17021846

申请日：2020-09-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroaki CHIHAYA ,  Einstein Noel ABARRA ,  Shota ISHIBASHI

IPC: H01L21/66 ,  H01L43/12 ,  C23C14/56 ,  G01N27/72 ,  G01R33/032

Abstract: A film forming system for forming a magnetic film is provided. The film forming system includes a processing module configured to form the magnetic film on a substrate, a magnetization characteristic measuring device configured to measure magnetization characteristics of the magnetic film formed on the substrate in the processing module, and a transfer unit configured to transfer the substrate between the processing module and the magnetization characteristic measuring device. The magnetization characteristic measuring device includes a magnetic field applying mechanism having a permanent magnet magnetic circuit configured to apply a magnetic field to the substrate and adjust the magnetic field to be applied to the substrate, and a detector configured to detect magnetization characteristics of the substrate.

公开(公告)号：US20200227273A1

公开(公告)日：2020-07-16

申请号：US16743466

申请日：2020-01-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TOSHIMA ,  Shinji FURUKAWA ,  Shota ISHIBASHI

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/027 ,  H01L21/203 ,  H01L21/285 ,  C23C14/14 ,  C23C14/22

Abstract: There is provided a hard mask formed on a substrate for manufacturing a semiconductor device, the hard mask including a film made of a compound which is composed of Ru and an element selected from Ti, Zr, Hf, V, Nb, Ta, Mo, W, and Si.

公开(公告)号：US20230175114A1

公开(公告)日：2023-06-08

申请号：US18076970

申请日：2022-12-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota ISHIBASHI ,  Toru KITADA

IPC: C23C14/35 ,  C23C14/54

CPC classification number: C23C14/352 ,  C23C14/54

Abstract: A sputtering apparatus includes: a processing container; a first target provided inside the processing container and formed of a first material; a second target provided inside the processing container and formed of a second material different from the first material; a stage provided inside the processing container to place a substrate thereon; a shielding plate arranged between the first target and the second target; and a controller, wherein the controller is configured to perform a process of reducing a film stress of a film formed on the shielding plate.

公开(公告)号：US20220025511A1

公开(公告)日：2022-01-27

申请号：US17384058

申请日：2021-07-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato SHINADA ,  Einstein Noel ABARRA ,  Hiroyuki TOSHIMA ,  Shota ISHIBASHI

IPC: C23C14/35 ,  C23C14/04

Abstract: An apparatus for performing a sputtering process on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed, a target for emitting target particles to be adhered to the substrate by plasma formed in the processing chamber, a magnet, provided on a rear surface of the target, for adjusting a state of the plasma on the surface of the target, and a magnet moving mechanism for repeatedly moving the magnet between a position on one side and a position on the other side set across a center portion on the rear surface of the target. The apparatus further includes a collimator having two regulating plates for limiting an incident angle of the target particles to the substrate, and an arrangement position adjustment mechanism adjusting positions of the two regulating plates according to the movement of the magnet.

公开(公告)号：US20210296103A1

公开(公告)日：2021-09-23

申请号：US17206738

申请日：2021-03-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota ISHIBASHI ,  Tatsuo HIRASAWA ,  Hiroyuki TOSHIMA ,  Hiroyuki IWASHITA

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/04

Abstract: An example of a sputtering apparatus comprises a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, a shielding plate disposed between the first and the second target and the substrate and having a through-hole through which the sputter particles pass, and an obstructing mechanism. The through-hole has a first opening region through which the sputter particles emitted from the fit target pass and a second opening region through which the sputter particles emitted from the second target pass, and the obstructing mechanism is configured to obstruct the sputter particles emitted from the first target in passing through the second opening region and the sputter particles emitted in the second target from passing through the first opening region.