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    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    1.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
    等离子体加工设备和等离子体处理方法

    公开(公告)号：US20150294839A1

    公开(公告)日：2015-10-15

    申请号：US14681161

    申请日：2015-04-08

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Hiroyuki TAKABA ,  Tetsuya NISHIZUKA ,  Naoki MATSUMOTO ,  Michitaka AITA ,  Takashi MINAKAWA ,  Kazuki TAKAHASHI ,  Jun YOSHIKAWA ,  Motoshi FUKUDOME ,  Naoki MIHARA ,  Hiroyuki KONDO

    IPC: H01J37/32

    CPC classification number: H01J37/3244 ,  H01J37/3222

    Abstract: Disclosed is a plasma processing apparatus including a processing container, a placing table, a central introduction section, and a peripheral introduction section. The central introduction section is provided above the placing table. The central introduction introduces a gas toward the placing table along the axis passing through a center of the placing table. The peripheral introduction section is provided between the central introduction section and a top surface of the placing table in a height direction. In addition, the peripheral introduction section is formed along a side wall. The peripheral introduction section provides a plurality of gas ejection ports arranged in a circumferential direction with respect to the axis. The plurality of gas ejection ports of the peripheral introduction section extend away from the placing table as the gas ejection ports come close to the axis.

    Abstract translation: 公开了一种等离子体处理装置，其包括处理容器，放置台，中央引入部和周边引入部。 中心介绍部分在放置台上方提供。 中心介绍沿着穿过放置台的中心的轴线向放置台引入气体。 周边引入部设置在中心引导部和放置台的上表面之间的高度方向。 另外，周边导入部沿着侧壁形成。 周边引入部分提供沿相对于轴线沿圆周方向布置的多个气体喷射口。 当气体喷射口靠近轴线时，周边引入部分的多个气体喷射口远离放置台延伸。

    ANTENNA, PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
    2.
    发明申请
    ANTENNA, PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD 审中-公开

    公开(公告)号：US20200058468A1

    公开(公告)日：2020-02-20

    申请号：US16478770

    申请日：2018-01-04

    Applicant: Tokyo Electron Limited

    Inventor： Kazuki TAKAHASHI ,  Yuki KAWADA ,  Naoki MATSUMOTO ,  Takahiro SENDA ,  Koji KOYAMA ,  Shohei FUKANO ,  Jun YOSHIKAWA ,  Hiroyuki KONDO ,  Takashi MINAKAWA

    IPC: H01J37/32

    Abstract: An antenna according to an aspect includes: a dielectric window having a first surface and a second surface, the second surface having an annular recessed surface and a flat surface surrounded by the recessed surface; a slot plate; a dielectric plate; a heat transfer member made of metal and having an upper surface and a lower surface opposing each other; a cooling jacket; and a heater, in which the upper surface includes a plurality of first regions and a second region, the cooling jacket is mounted on the plurality of first regions, the second region is recessed further toward the lower surface side than the plurality of first regions, the heater is mounted on the second region, and each of the plurality of first regions is provided at a position at least partially overlapping with the flat surface when viewed in a direction parallel to a central axis.

    PLASMA PROCESSING APPARATUS
    3.
    发明申请
    PLASMA PROCESSING APPARATUS 有权

    公开(公告)号：US20210043434A1

    公开(公告)日：2021-02-11

    申请号：US16939076

    申请日：2020-07-27

    Applicant: Tokyo Electron Limited

    Inventor： Toshimasa KOBAYASHI ,  Kazuki TAKAHASHI

    IPC: H01J37/32 ,  B01D53/04

    Abstract: A plasma processing apparatus includes: a processing container in which a mounting stage mounted with a substrate is provided and a plasma process is performed on the substrate; an exhaust passage which is provided around the mounting stage and through which a gas containing a by-product released by the plasma process flows; and a first adsorption member which is arranged along an inner wall surface of the exhaust passage and of which a surface is roughened to adsorb the by-product.

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