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公开(公告)号：US09859102B2
公开(公告)日：2018-01-02
申请号：US15131459
申请日：2016-04-18
发明人： Shigeru Tahara , Eiichi Nishimura , Mikhail Baklanov , Liping Zhang , Jean-Francois de Marneffe
IPC分类号： H01J37/32 , H01L21/311
CPC分类号： H01J37/32449 , H01J37/32477 , H01L21/31116
摘要： A method of etching a porous film is provided. The method includes supplying a first gas into a processing chamber of a plasma processing apparatus in which an object to be processed including a porous film is accommodated, and generating a plasma of a second gas for etching the porous film in the processing chamber. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas which is supplied into the processing chamber is set to be greater than or equal to 20% of the saturated vapor pressure.
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公开(公告)号：US10236162B2
公开(公告)日：2019-03-19
申请号：US15826059
申请日：2017-11-29
发明人： Shigeru Tahara , Eiichi Nishimura , Mikhail Baklanov , Liping Zhang , Jean-Francois de Marneffe
IPC分类号： H01L21/311 , H01J37/32
摘要： A method of etching a porous film is provided. The method includes supplying a first gas into a processing chamber of a plasma processing apparatus in which an object to be processed including a porous film is accommodated, and generating a plasma of a second gas for etching the porous film in the processing chamber. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas which is supplied into the processing chamber is set to be greater than or equal to 20% of the saturated vapor pressure.
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