公开(公告)号：US11387112B2

公开(公告)日：2022-07-12

申请号：US16587760

申请日：2019-09-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi Takatsuki ,  Tadahiro Ishizaka ,  Mikio Suzuki ,  Toshio Hasegawa

IPC: H01L21/311 ,  H01L21/285 ,  C23C16/455 ,  C23C16/02 ,  C23C16/06 ,  H01L21/768

Abstract: There is provided a method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method including: supplying a halogen-containing gas into a processing chamber in which the substrate is loaded; and removing a metal oxide from the bottom portion of the recess using the halogen-containing gas.

公开(公告)号：US20180315649A1

公开(公告)日：2018-11-01

申请号：US15960726

申请日：2018-04-24

Applicant: Tokyo Electron Limited

Inventor： Koji Maekawa ,  Takashi Sameshima ,  Shintaro Aoyama ,  Mikio Suzuki ,  Susumu Arima ,  Atsushi Matsumoto ,  Naoki Shibata

IPC: H01L21/768 ,  H01L21/285

Abstract: A method of forming a tungsten film having low resistance is provided. The method includes forming a discontinuous film containing a metal on a substrate; and forming the tungsten film on the substrate on which the discontinuous film is formed. In the forming of the discontinuous film, a first source gas and a nitriding gas are supplied onto the substrate alternately along with, for example, a carrier gas. In the forming of the tungsten film, a second source gas and a reducing gas are supplied onto the substrate alternately along with, for example, a carrier gas.

公开(公告)号：US20190161853A1

公开(公告)日：2019-05-30

申请号：US16312864

申请日：2017-07-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shintaro Aoyama ,  Mikio Suzuki ,  Yumiko Kawano ,  Kohichi Satoh

IPC: C23C16/02 ,  C23C16/14 ,  C23C16/24 ,  H01L21/285

Abstract: Provided is a method for forming a tungsten film in which a tungsten film is formed on the surface of a substrate, the method including: disposing a substrate having an amorphous layer on the surface thereof inside a treatment container under a depressurized atmosphere; heating the substrate inside the treatment container; and supplying, into the treatment container, WF6 gas which is a tungsten raw material and H2 gas which is a reducing gas, and forming a main tungsten film on the amorphous layer.

公开(公告)号：US20220301882A1

公开(公告)日：2022-09-22

申请号：US17835056

申请日：2022-06-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi Takatsuki ,  Tadahiro Ishizaka ,  Mikio Suzuki ,  Toshio Hasegawa

IPC: H01L21/311 ,  H01L21/285 ,  C23C16/455 ,  C23C16/02 ,  C23C16/06 ,  H01L21/768

Abstract: There is provided a method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method including: supplying a halogen-containing gas into a processing chamber in which the substrate is loaded; and removing a metal oxide from the bottom portion of the recess using the halogen-containing gas.

公开(公告)号：US10886170B2

公开(公告)日：2021-01-05

申请号：US15960726

申请日：2018-04-24

Applicant: Tokyo Electron Limited

Inventor： Koji Maekawa ,  Takashi Sameshima ,  Shintaro Aoyama ,  Mikio Suzuki ,  Susumu Arima ,  Atsushi Matsumoto ,  Naoki Shibata

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: A method of forming a tungsten film having low resistance is provided. The method includes forming a discontinuous film containing a metal on a substrate; and forming the tungsten film on the substrate on which the discontinuous film is formed. In the forming of the discontinuous film, a first source gas and a nitriding gas are supplied onto the substrate alternately along with, for example, a carrier gas. In the forming of the tungsten film, a second source gas and a reducing gas are supplied onto the substrate alternately along with, for example, a carrier gas.