公开(公告)号：US20190161853A1

公开(公告)日：2019-05-30

申请号：US16312864

申请日：2017-07-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shintaro Aoyama ,  Mikio Suzuki ,  Yumiko Kawano ,  Kohichi Satoh

IPC: C23C16/02 ,  C23C16/14 ,  C23C16/24 ,  H01L21/285

Abstract: Provided is a method for forming a tungsten film in which a tungsten film is formed on the surface of a substrate, the method including: disposing a substrate having an amorphous layer on the surface thereof inside a treatment container under a depressurized atmosphere; heating the substrate inside the treatment container; and supplying, into the treatment container, WF6 gas which is a tungsten raw material and H2 gas which is a reducing gas, and forming a main tungsten film on the amorphous layer.

公开(公告)号：US20180315649A1

公开(公告)日：2018-11-01

申请号：US15960726

申请日：2018-04-24

Applicant: Tokyo Electron Limited

Inventor： Koji Maekawa ,  Takashi Sameshima ,  Shintaro Aoyama ,  Mikio Suzuki ,  Susumu Arima ,  Atsushi Matsumoto ,  Naoki Shibata

IPC: H01L21/768 ,  H01L21/285

Abstract: A method of forming a tungsten film having low resistance is provided. The method includes forming a discontinuous film containing a metal on a substrate; and forming the tungsten film on the substrate on which the discontinuous film is formed. In the forming of the discontinuous film, a first source gas and a nitriding gas are supplied onto the substrate alternately along with, for example, a carrier gas. In the forming of the tungsten film, a second source gas and a reducing gas are supplied onto the substrate alternately along with, for example, a carrier gas.

公开(公告)号：US09418837B2

公开(公告)日：2016-08-16

申请号：US14504915

申请日：2014-10-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji Akiyama ,  Hirokazu Higashijima ,  Chihiro Tamura ,  Shintaro Aoyama ,  Yu Wamura

IPC: H01L21/02 ,  C23C16/56 ,  H01L21/67 ,  C23C16/40 ,  H01L21/28 ,  H01L29/51 ,  C23C16/06 ,  C23C16/46 ,  C23C16/52 ,  H01L29/40 ,  H01L49/02

CPC classification number: H01L21/02356 ,  C23C16/06 ,  C23C16/405 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28158 ,  H01L21/28185 ,  H01L21/67109 ,  H01L21/67115 ,  H01L28/40 ,  H01L29/401 ,  H01L29/517

Abstract: A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.

Abstract translation: 一种半导体器件制造方法，包括：在具有源极，漏极和沟道的工件上形成含有氧化铪和氧化锆的栅极绝缘膜; 并且在600℃或更低的温度下对栅极绝缘膜进行结晶热处理。 进行结晶热处理的栅极绝缘膜的相对介电常数为27以上。

公开(公告)号：US10886170B2

公开(公告)日：2021-01-05

申请号：US15960726

申请日：2018-04-24

Applicant: Tokyo Electron Limited

Inventor： Koji Maekawa ,  Takashi Sameshima ,  Shintaro Aoyama ,  Mikio Suzuki ,  Susumu Arima ,  Atsushi Matsumoto ,  Naoki Shibata

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: A method of forming a tungsten film having low resistance is provided. The method includes forming a discontinuous film containing a metal on a substrate; and forming the tungsten film on the substrate on which the discontinuous film is formed. In the forming of the discontinuous film, a first source gas and a nitriding gas are supplied onto the substrate alternately along with, for example, a carrier gas. In the forming of the tungsten film, a second source gas and a reducing gas are supplied onto the substrate alternately along with, for example, a carrier gas.