公开(公告)号：US10784110B2

公开(公告)日：2020-09-22

申请号：US16250009

申请日：2019-01-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi Sameshima ,  Koji Maekawa ,  Katsumasa Yamaguchi

IPC: H01L21/285 ,  C23C16/14 ,  C23C16/34 ,  C23C16/56 ,  C23C16/44 ,  C23C16/52 ,  C23C16/02 ,  H01L21/768 ,  H01L21/28

Abstract: A tungsten film forming method in which a substrate having a TiN film formed thereon is disposed in a processing container and a tungsten film is formed above a surface of the substrate while heating the substrate in a reduced pressure atmosphere, includes forming a first film of an aluminum-containing material on the substrate and forming the tungsten film on the first film.

公开(公告)号：US11171004B2

公开(公告)日：2021-11-09

申请号：US16575694

申请日：2019-09-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi Sameshima ,  Koji Maekawa ,  Katsumasa Yamaguchi

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/67

Abstract: There is provided a film forming method including: forming an Al-containing film on a base in a depressurized state; and subsequently, forming an initial tungsten film on the Al-containing film by alternately supplying a B2H6 gas and a WF6 gas in a repetitive manner in the depressurized state without exposing the Al-containing film to an atmosphere while performing a purge process between the supply of the B2H6 gas and the supply of the WF6 gas.

公开(公告)号：US10954593B2

公开(公告)日：2021-03-23

申请号：US16276867

申请日：2019-02-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi Sameshima ,  Koji Maekawa ,  Katsumasa Yamaguchi

IPC: C23C16/14 ,  C23C16/24 ,  H01L21/285 ,  H01L21/768 ,  C23C16/455 ,  C23C16/02 ,  C23C16/52

Abstract: There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

公开(公告)号：US10886170B2

公开(公告)日：2021-01-05

申请号：US15960726

申请日：2018-04-24

Applicant: Tokyo Electron Limited

Inventor： Koji Maekawa ,  Takashi Sameshima ,  Shintaro Aoyama ,  Mikio Suzuki ,  Susumu Arima ,  Atsushi Matsumoto ,  Naoki Shibata

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: A method of forming a tungsten film having low resistance is provided. The method includes forming a discontinuous film containing a metal on a substrate; and forming the tungsten film on the substrate on which the discontinuous film is formed. In the forming of the discontinuous film, a first source gas and a nitriding gas are supplied onto the substrate alternately along with, for example, a carrier gas. In the forming of the tungsten film, a second source gas and a reducing gas are supplied onto the substrate alternately along with, for example, a carrier gas.

公开(公告)号：US11802334B2

公开(公告)日：2023-10-31

申请号：US17172589

申请日：2021-02-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi Sameshima ,  Koji Maekawa ,  Katsumasa Yamaguchi

IPC: C23C16/14 ,  C23C16/24 ,  H01L21/285 ,  H01L21/768 ,  C23C16/455 ,  C23C16/02 ,  C23C16/52

CPC classification number: C23C16/14 ,  C23C16/0281 ,  C23C16/24 ,  C23C16/45525 ,  C23C16/52 ,  H01L21/28568 ,  H01L21/76876

Abstract: There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

公开(公告)号：US11028479B2

公开(公告)日：2021-06-08

申请号：US16199789

申请日：2018-11-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Katsumasa Yamaguchi ,  Takashi Sameshima

IPC: C23C16/08 ,  C23C16/455 ,  C23C16/14 ,  C23C16/02 ,  C23C16/04

Abstract: A method of forming a tungsten film on a surface of a target substrate having a base film is performed by repeating a cycle plural times. The cycle includes alternately supplying a tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas, with a purge interposed therebetween, into a process container in which the target substrate is accommodated and that is maintained under a depressurized atmosphere. The method includes setting a supply flow rate of the tungsten chloride gas and a time of the cycle such that a ratio of a thickness of the base film etched by repeating the cycle the plural times to a thickness of the base film before repeating the cycle the plural times becomes smaller than a predetermined ratio in a state where an integrated flow rate of the tungsten chloride gas per one cycle is kept substantially constant.

公开(公告)号：US20180315649A1

公开(公告)日：2018-11-01

申请号：US15960726

申请日：2018-04-24

Applicant: Tokyo Electron Limited

Inventor： Koji Maekawa ,  Takashi Sameshima ,  Shintaro Aoyama ,  Mikio Suzuki ,  Susumu Arima ,  Atsushi Matsumoto ,  Naoki Shibata

IPC: H01L21/768 ,  H01L21/285

Abstract: A method of forming a tungsten film having low resistance is provided. The method includes forming a discontinuous film containing a metal on a substrate; and forming the tungsten film on the substrate on which the discontinuous film is formed. In the forming of the discontinuous film, a first source gas and a nitriding gas are supplied onto the substrate alternately along with, for example, a carrier gas. In the forming of the tungsten film, a second source gas and a reducing gas are supplied onto the substrate alternately along with, for example, a carrier gas.