公开(公告)号：US20240006187A1

公开(公告)日：2024-01-04

申请号：US18247669

申请日：2021-10-28

Applicant: Tokyo Electron Limited

Inventor： Toshinori DEBARI ,  Reiko SASAHARA ,  Teppei OKUMURA ,  Woonghyun JEUNG ,  Kenshiro ASAHI ,  Hiroyuki ABE ,  Seungmin KIM

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01L21/0206 ,  H01L21/67069

Abstract: An etching method includes: providing, to an interior of a chamber, a substrate having a three-layered film formed by stacking a first silicon oxide-based film, a silicon nitride-based film, and a second silicon oxide-based film; and collectively etching the three-layered film using a HF—NH3-based gas in the interior of the chamber while adjusting a gas ratio in each of the first silicon oxide-based film, the silicon nitride-based film, and the second silicon oxide-based film.

公开(公告)号：US20220301821A1

公开(公告)日：2022-09-22

申请号：US17686609

申请日：2022-03-04

Applicant: Tokyo Electron Limited

Inventor： Yuji SAEGUSA ,  Tatsuya HANDA ,  Reiko SASAHARA ,  Kenshiro ASAHI ,  Kazuaki NISHIMURA ,  Akihiro YOSHIMURA ,  Masaki FURUSAWA

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/44 ,  H01L21/3065

Abstract: There is provided a gas treatment apparatus for performing gas treatment on a substrate. The gas treatment apparatus includes: a chamber in which the substrate is accommodated; a gas supply mechanism configured to individually supply a fluorine-containing gas and an alkaline gas; and a gas introduction member configured to cause the fluorine-containing gas and the alkaline gas supplied from the gas supply mechanism to merge with each other and introduce a mixed gas in which the fluorine-containing gas and the alkaline gas are mixed into the chamber. A portion of the gas introduction member including a merging point of the fluorine-containing gas and the alkaline gas is made of an aluminum-based material. A resin coating is formed on at least the portion including the merging point.

公开(公告)号：US20200048134A1

公开(公告)日：2020-02-13

申请号：US16529148

申请日：2019-08-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Reiko SASAHARA ,  Yasuo NAKATANI ,  Keiko HADA

IPC: C03B19/14

Abstract: There is provided a method of processing an oxygen-containing workpiece. The method of processing an oxygen-containing workpiece includes controlling a fluorine concentration in the oxygen-containing workpiece based on at least one of a kind of a fluorine-containing processing gas, a processing temperature and a processing pressure used for processing the oxygen-containing workpiece.

公开(公告)号：US20190157093A1

公开(公告)日：2019-05-23

申请号：US16308572

申请日：2017-03-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Reiko SASAHARA ,  Tsuhung HUANG ,  Teppei OKUMURA

IPC: H01L21/3065 ,  H01L21/324

Abstract: There is provided a substrate processing method which is capable of suitably etching a boron-doped silicon. According to the present invention, a wafer W including an SiB layer made of boron-doped silicon is exposed to a fluorine gas and an ammonia gas, and the wafer W mounted on a stage is heated.