公开(公告)号：US20220020568A1

公开(公告)日：2022-01-20

申请号：US17374671

申请日：2021-07-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takahiro SHINDO ,  Seiichi OKAMOTO ,  Hiroshi OTOMO ,  Takamichi KIKUCHI ,  Tatsuo MATSUDO ,  Yasushi MORITA ,  Takashi SAKUMA

IPC: H01J37/32 ,  H01L21/3205 ,  H01L21/311

Abstract: A plasma processing apparatus is provided to perform plasma processing on a substrate. The plasma processing apparatus includes a processing chamber, a substrate support disposed in the processing chamber to place thereon the substrate, a grounded lower electrode provided in the substrate support, an upper electrode disposed to face the lower electrode, a gas supply unit to supply a processing gas to a space between the upper electrode and the substrate support, and a radio frequency power supply to apply RF power to the upper electrode to generate plasma of the processing gas. The plasma processing apparatus further includes a voltage waveform shaping unit provided between the RF power supply and the upper electrode to shape a voltage waveform of the RF power supply to suppress a positive voltage of the RF voltage applied to the upper electrode.