公开(公告)号：US20210054503A1

公开(公告)日：2021-02-25

申请号：US16996426

申请日：2020-08-18

Applicant: Tokyo Electron Limited

Inventor： Masato ARAKI ,  Kohichi SATOH ,  Tadahiro ISHIZAKA ,  Takashi SAKUMA

IPC: C23C16/40 ,  C23C16/52

Abstract: There is provided a substrate processing method which includes placing a substrate on a stage provided inside a processing container, and forming a ruthenium film on the substrate, wherein forming the ruthenium film includes repeating a cycle including: supplying a ruthenium-containing gas and a CO gas into the processing container; and stopping the supply of the ruthenium-containing gas and the CO gas into the processing container and exhausting a gas within the processing container.

公开(公告)号：US20150004784A1

公开(公告)日：2015-01-01

申请号：US14316251

申请日：2014-06-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Osamu YOKOYAMA ,  Cheonsoo HAN ,  Takashi SAKUMA ,  Chiaki YASUMURO ,  Tatsuo HIRASAWA ,  Tadahiro ISHIZAKA ,  Kenji SUZUKI

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  H01L21/2885 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76867 ,  H01L21/76876 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring.

Abstract translation: 提供了在形成在基板表面上的绝缘膜中形成为具有预定图案的凹部中形成铜（Cu）布线的方法。 所述方法包括：至少在所述凹部的表面上形成阻挡膜，所述阻挡膜用作阻挡Cu的扩散的阻挡层; 通过化学机械沉积（CVD）在阻挡膜上形成Ru膜; 通过物理气相沉积（PVD）在Ru膜上形成Cu合金膜以埋藏凹槽; 使用埋在凹部中的Cu合金膜形成Cu布线; 并在Cu布线上形成电介质膜。

公开(公告)号：US20220020568A1

公开(公告)日：2022-01-20

申请号：US17374671

申请日：2021-07-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takahiro SHINDO ,  Seiichi OKAMOTO ,  Hiroshi OTOMO ,  Takamichi KIKUCHI ,  Tatsuo MATSUDO ,  Yasushi MORITA ,  Takashi SAKUMA

IPC: H01J37/32 ,  H01L21/3205 ,  H01L21/311

Abstract: A plasma processing apparatus is provided to perform plasma processing on a substrate. The plasma processing apparatus includes a processing chamber, a substrate support disposed in the processing chamber to place thereon the substrate, a grounded lower electrode provided in the substrate support, an upper electrode disposed to face the lower electrode, a gas supply unit to supply a processing gas to a space between the upper electrode and the substrate support, and a radio frequency power supply to apply RF power to the upper electrode to generate plasma of the processing gas. The plasma processing apparatus further includes a voltage waveform shaping unit provided between the RF power supply and the upper electrode to shape a voltage waveform of the RF power supply to suppress a positive voltage of the RF voltage applied to the upper electrode.

公开(公告)号：US20150240344A1

公开(公告)日：2015-08-27

申请号：US14623398

申请日：2015-02-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro ISHIZAKA ,  Takashi SAKUMA ,  Tatsuo HIRASAWA

IPC: C23C14/22 ,  H01L21/768 ,  C23C14/54

CPC classification number: H01L21/76867 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

Abstract: A ruthenium film forming method includes: placing a target substrate in a processing container; supplying ruthenium carbonyl gas together with CO gas as a carrier gas into the processing container, the ruthenium carbonyl gas being generated from solid-state ruthenium carbonyl; supplying additional CO gas into the processing container; and forming a ruthenium film on the target substrate by decomposing the ruthenium carbonyl gas.

Abstract translation: 钌膜形成方法包括：将目标基板放置在处理容器中; 将羰基羰基气体与作为载气的CO气体一起供给到处理容器中，由固体羰基钌生成羰基羰基气体; 向处理容器供应额外的CO气体; 并通过分解羰基羰基气体在靶基板上形成钌膜。

公开(公告)号：US20240337022A1

公开(公告)日：2024-10-10

申请号：US18624402

申请日：2024-04-02

Applicant: Tokyo Electron Limited

Inventor： Kensaku NARUSHIMA ,  Takashi KOBAYASHI ,  Shinya OKABE ,  Takashi SAKUMA ,  Kunihiro TADA ,  Satoshi YOSHIDA

IPC: C23C16/509 ,  C23C16/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46

CPC classification number: C23C16/509 ,  C23C16/14 ,  C23C16/4405 ,  C23C16/4408 ,  C23C16/45512 ,  C23C16/46

Abstract: A film forming apparatus, including a processing container, an interior of which is configured to be depressurized, an electrode configured to generate an electric field in a processing space inside the processing container, a radio frequency power supply configured to supply radio frequency power to the electrode, a stage arranged in the processing container to place a substrate thereon, and a film forming gas introduction part configured to introduce vaporized zirconium chloride into the processing space. The film forming gas introduction part is made of a metal and is grounded.

公开(公告)号：US20160163591A1

公开(公告)日：2016-06-09

申请号：US14561331

申请日：2014-12-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro ISHIZAKA ,  Takashi SAKUMA ,  Osamu YOKOYAMA ,  Kai-Hung YU

IPC: H01L21/768 ,  H01L23/532 ,  C23C14/34 ,  C23C16/52 ,  C23C14/24 ,  C23C14/54 ,  H01L21/285 ,  H01L23/528

CPC classification number: C23C14/34 ,  C23C14/046 ,  C23C14/165 ,  C23C14/24 ,  C23C14/54 ,  C23C16/52 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76846 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A Cu wiring forming method of forming Cu wiring that is to be arranged in contact with tungsten wiring, by filling Cu into a recess formed in a substrate, includes: removing a tungsten oxide formed on a surface of the tungsten wiring; forming a nitriding preventing film at least on the surface of the tungsten wiring in the recess; forming a barrier film that prevents diffusion of Cu, on a surface in the recess from above the nitriding preventing film; forming a liner film on the barrier film; and filling a Cu film on the liner film.

Abstract translation: 通过将Cu填充到形成在基板中的凹部中，形成与钨布线接触而布置的Cu布线的Cu布线形成方法包括：去除形成在钨布线的表面上的氧化钨; 至少在所述凹部中的所述钨线的表面上形成防氮膜; 形成阻止膜从氮化防止膜上方阻止在凹部的表面上的扩散的阻挡膜; 在阻挡膜上形成衬垫膜; 并在衬膜上填充Cu膜。

公开(公告)号：US20150262872A1

公开(公告)日：2015-09-17

申请号：US14642331

申请日：2015-03-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro ISHIZAKA ,  Takashi SAKUMA ,  Osamu YOKOYAMA ,  Kenji MATSUMOTO ,  Peng CHANG ,  Hiroyuki NAGAI

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285

CPC classification number: H01L21/76877 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a copper wiring buried in a recess portion of a predetermined pattern formed in an interlayer insulation layer of a substrate is disclosed. The method includes: forming a manganese oxide film at least on a surface of the recess portion, the manganese oxide film serving as a self-aligned barrier film through reaction with the interlayer insulation layer; performing hydrogen radical treatment with respect to a surface of the manganese oxide film; placing a metal more active than ruthenium on the surface of the manganese oxide film after the hydrogen radical treatment; forming a ruthenium film on the surface where the metal more active than ruthenium is present; and forming a copper film on the ruthenium film by physical vapor deposition (PVD) to bury the copper film in the recess portion.

Abstract translation: 公开了一种埋设在衬底的层间绝缘层中形成的预定图案的凹部中的铜布线的形成方法。 该方法包括：通过与层间绝缘层反应，至少在凹部的表面上形成氧化锰膜，氧化锰膜作为自对准阻挡膜; 相对于氧化锰膜的表面进行氢自由基处理; 在氧自由基处理之后，将比钌更金属的氧化物膜置于氧化锰膜的表面上; 在其上存在比钌更有活性的金属的表面上形成钌膜; 并通过物理气相沉积（PVD）在钌膜上形成铜膜以将铜膜埋入凹部中。

公开(公告)号：US20240355615A1

公开(公告)日：2024-10-24

申请号：US18638991

申请日：2024-04-18

Applicant: Tokyo Electron Limited

Inventor： Tadahiro ISHIZAKA ,  Takashi SAKUMA

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  H01L21/768

CPC classification number: H01L21/02068 ,  H01J37/32899 ,  H01L21/67069 ,  H01L21/76877 ,  H01J2237/335 ,  H01L21/67155

Abstract: A method of processing a substrate includes: removing a silicon oxide portion contained in an oxide film on a surface of a metal silicide layer by supplying a hydrogen fluoride gas and an ammonia gas to the oxide film so as to react with the silicon oxide portion contained in the oxide film, wherein the metal silicide layer is provided by being stacked in a recess formed in an insulator layer which is stacked on a silicon-containing layer; and removing a metal oxide portion by supplying a metal halide gas to the oxide film so as to react with the metal oxide portion contained in the oxide film.

公开(公告)号：US20240290609A1

公开(公告)日：2024-08-29

申请号：US18572959

申请日：2022-06-08

Applicant: Tokyo Electron Limited

Inventor： Tadahiro ISHIZAKA ,  Kunihiro TADA ,  Takashi SAKUMA ,  Yoshiyuki HANADA

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/04 ,  C23C16/08 ,  C23C16/42 ,  C23C16/50 ,  H01J37/32 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/02068 ,  C23C16/0227 ,  C23C16/045 ,  C23C16/08 ,  C23C16/42 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32733 ,  H01J37/32816 ,  H01J37/32899 ,  H01L21/28518 ,  H01L21/76877 ,  H01J2237/3321

Abstract: A substrate processing method includes: a first oxide film removal process of supplying a first processing gas to a substrate, which includes a first metal film and a silicon-containing film, to remove a metal oxide film on a surface of the first metal film; a silicide formation process of supplying a second processing gas to the substrate to for a silicide on a surface of the silicon-containing film; and a film formation process of supplying a film formation gas to the substrate to deposit a second metal film on the first metal film and the silicide, after the first oxide removal process and the silicide formation process.

公开(公告)号：US20170250086A1

公开(公告)日：2017-08-31

申请号：US15443687

申请日：2017-02-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomonari URANO ,  Kyohei NOGUCHI ,  Osamu YOKOYAMA ,  Takashi KOBAYASHI ,  Satoshi WAKABAYASHI ,  Takashi SAKUMA

IPC: H01L21/285 ,  H01L21/673 ,  H01L21/67

CPC classification number: H01L21/28556 ,  C23C16/08 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/45542 ,  C23C16/45555 ,  H01L21/28518 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67393 ,  H01L21/76843 ,  H01L21/76862

Abstract: A substrate processing method is for forming a metal film on a target substrate by using a plasma. The method includes loading a target substrate having a silicon-containing layer on a surface thereof into a processing chamber which is pre-coated by a film containing a metal, introducing hydrogen gas and a gaseous compound of the metal and halogen into the processing chamber, generating a plasma, and forming a metal film on the target substrate. The method further includes performing a first reduction process of forming an atmosphere of a plasma obtained by activating hydrogen gas in the processing chamber, unloading the target substrate from the processing chamber, performing a second reduction process of forming an atmosphere of a plasma obtained by activating hydrogen gas in the processing chamber, and loading a next target substrate into the processing chamber.