公开(公告)号：US20240120179A1

公开(公告)日：2024-04-11

申请号：US18274808

申请日：2022-01-19

Applicant: TOKYO ELECTRON LIMITED ,  KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION

Inventor： Masaharu SHIRATANI ,  Kunihiro KAMATAKI ,  Kazunori KOGA ,  Takahiro SHINDO ,  Tatsuo MATSUDO

IPC: H01J37/32 ,  H03H11/44

CPC classification number: H01J37/32183 ,  H03H11/44 ,  H01J2237/332 ,  H01J2237/334

Abstract: There is provided a plasma processing apparatus for performing plasma processing on a substrate, comprising: a processing container accommodating the substrate; an electrode to which a high-frequency power for generating plasma in the processing container is applied; a high-frequency power supply configured to apply the high-frequency power to the electrode; and a high-frequency power supply circuit configured to supply the high-frequency power from the high-frequency power supply to the electrode. The high-frequency power supply circuit comprises: a power supply path configured to supply a power from the high-frequency power supply to the electrode; and a matching device configured to match a high-frequency power supply-side impedance with a plasma-side impedance, the matching device comprising a negative impedance portion that is connected to the power supply path and realizes a negative impedance corresponding to a plasma-side impedance.

公开(公告)号：US20200321195A1

公开(公告)日：2020-10-08

申请号：US16905003

申请日：2020-06-18

Applicant: Tokyo Electron Limited

Inventor： Shigeki DOBA ,  Hiroyuki OGAWA ,  Hajime NAITO ,  Akitaka SHIMIZU ,  Tatsuo MATSUDO

IPC: H01J37/32 ,  H01L21/67

Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.

公开(公告)号：US20130128275A1

公开(公告)日：2013-05-23

申请号：US13665956

申请日：2012-11-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuo MATSUDO ,  Kenji NAGAI

IPC: G01B11/06 ,  G01K11/12

CPC classification number: G01B11/06 ,  G01B11/0633 ,  G01K11/125

Abstract: The interference optical system includes a light source, a collimator, a light-receiving element, a tunable filter, and a calculation apparatus. The collimator emits measuring light from the light source to a first main surface of the object, and receives reflected light from the first main surface and a second main surface. The light-receiving element acquires an intensity of light from the collimator. The tunable filter sweeps a wavelength of the light incident to the light-receiving element. The calculation apparatus measures an interference intensity distribution that has wavelength dependence and is an intensity distribution of the reflected light from the first main surface and the second main surface, and measures the thickness or the temperature of the object based on a waveform obtained by Fourier transforming the interference intensity distribution.

Abstract translation: 干涉光学系统包括光源，准直仪，光接收元件，可调谐滤光器和计算装置。 准直仪将来自光源的测量光发射到物体的第一主表面，并且接收来自第一主表面和第二主表面的反射光。 光接收元件从准直器获取光的强度。 可调谐滤波器扫描入射到光接收元件的光的波长。 计算装置测量具有波长依赖性并且是来自第一主表面和第二主表面的反射光的强度分布的干涉强度分布，并且基于通过傅里叶变换获得的波形来测量对象的厚度或温度 干扰强度分布。

公开(公告)号：US20130075037A1

公开(公告)日：2013-03-28

申请号：US13684416

申请日：2012-11-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuo MATSUDO ,  Shinji HIMORI

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32577 ,  H01J37/32642

Abstract: A plasma processing apparatus includes a processing gas supplying unit for supplying a desired processing gas to a processing space between an upper electrode and a lower electrode which are disposed facing each other in an evacuable processing chamber. The plasma processing apparatus further includes a radio frequency (RF) power supply unit for applying an RF power to one of the lower and the upper electrode to generate plasma of the processing gas by RF discharge and an electrically conductive RF ground member which covers a peripheral portion of the electrode to which the RF power is applied to receive RF power emitted outwardly in radial directions from the periphery portion of the electrode to which the RF power is applied and send the received RF power to a ground line.

Abstract translation: 等离子体处理装置包括处理气体供给单元，用于将所需的处理气体供给到在可排气处理室中彼此面对地设置的上部电极和下部电极之间的处理空间。 等离子体处理装置还包括：射频（RF）电源单元，用于向下电极和上电极之一施加RF功率，以通过RF放电产生处理气体的等离子体;以及导电RF接地部件，其覆盖周边 施加RF功率的电极的部分，以接收从RF电源所施加的电极的周边部分沿径向向外发射的RF功率，并将接收到的RF功率发送到接地线。

公开(公告)号：US20210151285A1

公开(公告)日：2021-05-20

申请号：US17089949

申请日：2020-11-05

Applicant: Tokyo Electron Limited

Inventor： Takeshi KOBAYASHI ,  Tatsuo MATSUDO

IPC: H01J37/244 ,  G01B11/06 ,  G01K11/00 ,  H01J37/32 ,  C23C16/50 ,  C23C16/52 ,  C23C16/458

Abstract: A temperature measurement system includes: a thickness calculating unit that calculates an optical thickness of a substrate; a rotation position detecting unit that detects rotation position information of the rotary table; a substrate specifying unit that specifies a substrate based on the rotation position information; a storage unit that stores first relationship information indicating a relationship between a temperature and a thickness associated with each substrate, and second relationship information indicating a relationship between an amount of change in temperature and an amount of change in optical thickness associated with each substrate; and a temperature calculating unit that calculates a temperature of the substrate based on the optical thickness calculated by the thickness calculating unit, the substrate specified by the substrate specifying unit, the first relationship information, and the second relationship information.

公开(公告)号：US20190137260A1

公开(公告)日：2019-05-09

申请号：US16239047

申请日：2019-01-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuo MATSUDO

IPC: G01B11/06 ,  G01B9/02 ,  H01J37/32 ,  G01K5/48

CPC classification number: G01B11/0675 ,  G01B9/02019 ,  G01B9/02021 ,  G01B9/02025 ,  G01B9/02044 ,  G01B9/0209 ,  G01K5/48 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32642 ,  H01J37/32724 ,  H01J37/3288

Abstract: A wear amount measuring apparatus includes a light source, a light transmission unit, a first and a second irradiation unit, a spectroscope and an analysis unit. The light transmission unit splits a low-coherence light from the light source into a first and a second low-coherence light. The first and the second irradiation units irradiate the first and the second low-coherence light to the component to receive reflected lights from the component. The light transmission unit transmits the reflected lights received by the first irradiation unit and the second irradiation unit to the spectroscope. The spectroscope configured to detect intensity distribution of the reflected lights from the first and the second irradiation unit. The analysis unit calculates a thickness difference between a thickness of the component at the first measuring point and that at the second measuring point by performing Fourier transform on the intensity distribution.

公开(公告)号：US20190115188A1

公开(公告)日：2019-04-18

申请号：US16214599

申请日：2018-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((λ/4)+nλ/2) by a fractional shortening (λ is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit.

公开(公告)号：US20160195436A1

公开(公告)日：2016-07-07

申请号：US15073273

申请日：2016-03-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun ABE ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: G01K11/00

CPC classification number: G01K11/00 ,  G01K11/125

Abstract: A temperature measurement apparatus includes a light source; a first splitter that splits a light beam into a measurement beam and a reference beam; a reference beam reflector that reflects the reference beam; an optical path length adjustor; a second splitter that splits the reflected reference beam into a first reflected reference beam and a second reflected reference beam; a first photodetector that measures an interference between the first reflected reference beam and a reflected measurement beam obtained by the measurement beam reflected from a target object; a second photodetector that measures an intensity of the second reflected reference beam; and a temperature calculation unit. The temperature calculation unit calculates a location of the interference by subtracting an output signal of the second photodetector from an output signal of the first photodetector, and calculates a temperature of the target object from the calculated location of the interference.

公开(公告)号：US20150185092A1

公开(公告)日：2015-07-02

申请号：US14580460

申请日：2014-12-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: G01K17/20 ,  G01J9/02 ,  H05H1/24 ,  G01N21/17

CPC classification number: G01K17/20 ,  G01J2005/583 ,  H01J37/32724 ,  H01J37/32917 ,  H01J37/32935 ,  H05H1/0043 ,  H05H1/24

Abstract: In a heat-flux measuring method for measuring an ion flux of plasma generated in a substrate processing chamber using a heat flux, a heat-flux measuring member is exposed to the plasma and irradiatated with a low coherent light. The heat-flux measuring member has a three-layered structure in which a first length and a second length of optical paths of the low-coherent light in the first layer and the third layer are measured using optical interference of reflected lights from the heat-flux measuring member. Current temperatures of the first layer and the third layer are obtained based on the measured first length, the measured second length, and data representing thermal-optical path length relationship. A heat flux flowing through the heat-flux measuring member is calculated based on the obtained temperatures, and a thickness and a thermal conductivity of the second layer.

Abstract translation: 在利用热通量测量在基板处理室中产生的等离子体的离子通量的热通量测量方法中，将热量测量部件暴露于等离子体并用低相干光照射。 热通量测量部件具有三层结构，其中使用来自热交换器的反射光的光学干涉来测量第一层和第三层中的低相干光的第一长度和第二长度的光路， 焊剂测量部件。 基于所测量的第一长度，测量的第二长度和表示热 - 光路长度关系的数据，获得第一层和第三层的当前温度。 基于获得的温度，第二层的厚度和热导率计算流过热通量测量部件的热通量。

公开(公告)号：US20150170882A1

公开(公告)日：2015-06-18

申请号：US14565612

申请日：2014-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  C23C16/50 ,  C23C16/458

CPC classification number: H01J37/32577 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165 ,  H01J37/32541 ,  H01J37/32568

Abstract: Disclosed is a plasma processing apparatus including a chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.

Abstract translation: 公开了一种等离子体处理装置，其包括：室，被配置为通过等离子体对晶片进行处理; VF电源，被配置为改变要供给到所述室中的高频功率的频率;基座，被配置为将晶片安装在其上; 以及设置成围绕晶片的聚焦环。 从VF电源开始通过等离子体的第一路径通过基座，晶片和等离子体，并且从VF电源开始通过等离子体的第二路径通过基座， 聚焦环和等离子体。 第一路径的反射最小频率不同于第二路径的反射最小频率，并且由VF电源可变的频率范围包括第一和第二路线的反射最小频率。