公开(公告)号：US20140099734A1

公开(公告)日：2014-04-10

申请号：US14041004

申请日：2013-09-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehisa SAITO ,  Atsutoshi INOKUCHI ,  Shogo MASUDA

IPC: H01L21/02 ,  C23C16/511

CPC classification number: H01L21/0226 ,  C23C16/045 ,  C23C16/345 ,  C23C16/511 ,  C23C16/56 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02329

Abstract: Disclosed is a method for depositing an insulating film with a high coverage through a low temperature process. The deposition method deposits an insulating film on a substrate using a deposition apparatus which includes a processing container that defines a processing space in which plasma is generated, a gas supply unit configured to supply a gas into the processing space, and a plasma generating unit configured to generate plasma by supplying microwave into the processing container. The deposition method includes depositing an insulating film that includes SiN on the substrate by supplying into a gas formed by adding H2 to trisilylamine into the processing container and generating plasma.

Abstract translation: 公开了一种通过低温工艺沉积具有高覆盖度的绝缘膜的方法。 沉积方法使用包括限定产生等离子体的处理空间的处理容器的沉积装置将衬底上的绝缘膜沉积在被配置为向处理空间供给气体的气体供给单元以及配置在等离子体产生单元中的等离子体生成单元 通过向处理容器提供微波来产生等离子体。 沉积方法包括通过将通过将H 2加入到三甲胺中而形成的气体加入到处理容器中并产生等离子体，在衬底上沉积包括SiN的绝缘膜。