公开(公告)号：US20140069585A1

公开(公告)日：2014-03-13

申请号：US14019023

申请日：2013-09-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadashi AOTO ,  Daisuke HAYASHI

IPC: H01J37/32

CPC classification number: H01J37/32807 ,  H01J37/32091 ,  H01J37/32715 ,  H01L21/67103 ,  H01L21/6831 ,  H01L21/68757

Abstract: Disclosed is a plasma etching apparatus which includes: a base formed of a metal that has a lower expansion coefficient than aluminum; an electrostatic chuck disposed on a mounting surface of the base and configured to mount an object to be processed; a bonding layer which bonds the base to the electrostatic chuck; and a heater provided within the electrostatic chuck. In the plasma etching apparatus, the base is provided with a metal portion that is formed through a cold spraying by using a metal that has a higher thermal conductivity than the metal for forming the base.

Abstract translation: 公开了一种等离子体蚀刻装置，其包括：具有比铝更低的膨胀系数的由金属形成的基座; 设置在所述基座的安装面上且被构造成安装被加工物的静电卡盘; 键合层，其将基底粘合到静电卡盘; 以及设置在静电卡盘内的加热器。 在等离子体蚀刻装置中，基底设置有通过使用具有比用于形成基底的金属更高的导热性的金属通过冷喷涂形成的金属部分。