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公开(公告)号：US20190355557A1
公开(公告)日：2019-11-21
申请号：US16411559
申请日：2019-05-14
发明人： Rumiko MORIYA , Takanori BANSE , Suguru SATO , Yuuji AKIDUKI , Takehiro TANIKAWA
IPC分类号： H01J37/32 , H01L21/687 , H01J37/22 , G01S17/08
摘要： There is provided a method for driving a member provided in a processing chamber. The method includes irradiating to the member measurement light having a wavelength that penetrates the member, detecting intensity distribution of reflected light based on reflected light from an upper surface of the member and reflected light from a bottom surface of the member, calculating an optical path difference by applying Fourier transform to a spectrum indicating the intensity distribution, and determining a driving amount of the member based on the optical path difference. The method further includes driving the member based on the determined driving amount.
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公开(公告)号：US20190252198A1
公开(公告)日：2019-08-15
申请号：US16315812
申请日：2017-07-04
发明人： Shinya MORIKITA , Takanori BANSE , Yuta SEYA , Ryosuke NIITSUMA
IPC分类号： H01L21/3065 , H01L21/308 , H01L21/311
摘要： A method MT according to an embodiment provides a technique capable of controlling a pattern shape during processing of an organic film and the like. A wafer W as an object to which the method MT in the embodiment is applied includes an etching target layer EL, an organic film OL, and a mask ALM, the organic film OL is constituted by a first region VL1 and a second region VL2, the mask ALM is provided on the first region VL1, the first region VL1 is provided on the second region VL2, and the second region VL2 is provided on the etching target layer EL. In the method MT, the first region VL1 is etched to reach the second region VL2 by generating a plasma of a gas containing nitrogen gas in the processing container 12 in which the wafer W is accommodated, a mask OLM1 is formed from the first region VL1, a protective film SX is conformally formed on a side surface SF of the mask OLM1, the second region VL2 is etched to reach the etching target layer EL to form a mask OLM2 from the second region VL2.
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公开(公告)号：US20210020409A1
公开(公告)日：2021-01-21
申请号：US16975462
申请日：2019-07-25
IPC分类号： H01J37/32 , H01L21/67 , H01L21/311
摘要： A plasma processing method includes: placing a substrate on a substrate support provided in a chamber of a capacitively coupled plasma processing apparatus where the substrate includes a silicon-containing film and a mask provided on the silicon-containing film and having an opening having a longitudinal direction; and supplying an inert gas into the chamber; and selectively performing one of supplying a first radio-frequency power to an upper electrode of the plasma processing apparatus to generate plasma from the inert gas and supplying a second radio-frequency power to a lower electrode of the plasma processing apparatus included in the substrate support, and applying a negative bias voltage to the upper electrode to cause positive ions from the plasma to collide with the upper electrode and release a silicon-containing material from the upper electrode, thereby depositing the silicon-containing material on the substrate.
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公开(公告)号：US20190096635A1
公开(公告)日：2019-03-28
申请号：US16141225
申请日：2018-09-25
IPC分类号： H01J37/32 , H01L21/02 , H01L21/3105 , H01L21/311 , H05H1/46
摘要： A plasma processing method for a workpiece in a plasma processing apparatus includes (i) performing a first plasma processing on a workpiece, and (ii) performing a second plasma processing on the workpiece. Power of second radio frequency waves set in the second plasma processing is greater than the power of the second radio frequency waves set in the first plasma processing. In the second plasma processing, a magnetic field distribution having a horizontal component on an edge side of the workpiece greater than a horizontal component on a center of the workpiece is formed by an electromagnet.
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公开(公告)号：US20190326092A1
公开(公告)日：2019-10-24
申请号：US16381218
申请日：2019-04-11
发明人： Kosuke OGASAWARA , Shuhei YOSHIBA , Takanori BANSE
IPC分类号： H01J37/32
摘要： A plasma etching method performed by a plasma processing apparatus is provided. The plasma processing apparatus includes an edge ring which includes an inner edge ring provided in a vicinity of a substrate to be placed on a stage, a middle edge ring arranged outside the inner edge ring, the middle edge ring being configured to be moved vertically by an actuation mechanism, and an outer edge ring arranged outside the middle edge ring. The method includes: performing first etching based on a first process condition; performing second etching based on a second process condition different from the first process condition; and moving the middle edge ring by the actuation mechanism, the moving being performed after the first etching is performed and before the second etching is performed.
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公开(公告)号：US20180277416A1
公开(公告)日：2018-09-27
申请号：US15925909
申请日：2018-03-20
IPC分类号： H01L21/687 , H01L21/67 , H01L21/683
CPC分类号： H01L21/68735 , H01J37/32 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H01L21/6833 , H01L21/68742 , H01L21/68785
摘要： A substrate processing apparatus includes a process chamber, a stage that is disposed in the process chamber and on which a substrate is placeable, a moving mechanism, and a focus ring. The focus ring is disposed on the stage and includes an inner focus ring disposed close to the substrate placed on the stage, a middle focus ring that is disposed outside of the inner focus ring and is movable in a vertical direction by the moving mechanism, and an outer focus ring that is disposed outside of the middle focus ring.
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公开(公告)号：US20180197720A1
公开(公告)日：2018-07-12
申请号：US15865841
申请日：2018-01-09
摘要： In a plasma processing method, a carbon-containing film is formed on surfaces of components in a chamber by using a plasma of a carbon-containing gas, and a silicon-containing film whose film thickness is determined based on a film thickness of the carbon-containing film is formed on a surface of the carbon-containing film by a silicon-containing gas. Then, a target object is loaded into the chamber and processed by a plasma of a processing gas after the formation of the silicon-containing film. The silicon-containing film is removed from the surface of the carbon-containing film by using a plasma of a fluorine-containing gas after the target object processed by the plasma is unloaded from the chamber, and the carbon-containing film is removed from the surfaces of the components by using a plasma of an oxygen-containing gas.
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公开(公告)号：US20220301824A1
公开(公告)日：2022-09-22
申请号：US17835521
申请日：2022-06-08
IPC分类号： H01J37/32 , H01L21/311 , H01L21/67
摘要： A capacitively coupled plasma processing apparatus includes a chamber; a gas supply that supplies an inert gas into the chamber; a substrate support including a lower electrode; an upper electrode provided above the substrate support and including silicon; a first radio-frequency power supply electrically connected to the upper electrode; a second radio-frequency power supply electrically connected to the lower electrode; a bias power supply that applies a negative bias voltage to the upper electrode; and a controller that controls an overall operation of the capacitively coupled plasma processing apparatus such that the silicon-containing material is deposited on sidewalls of a mask of the substrate to narrow an opening formed on the mask by an amount greater in a second direction than in a first direction.
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公开(公告)号：US20210313148A1
公开(公告)日：2021-10-07
申请号：US17353960
申请日：2021-06-22
发明人： Kosuke OGASAWARA , Shuhei YOSHIBA , Takanori BANSE
IPC分类号： H01J37/32 , H01L21/3065
摘要： A plasma etching method performed by a plasma processing apparatus is provided. The plasma processing apparatus includes an edge ring which includes an inner edge ring provided in a vicinity of a substrate to be placed on a stage, a middle edge ring arranged outside the inner edge ring, the middle edge ring being configured to be moved vertically by an actuation mechanism, and an outer edge ring arranged outside the middle edge ring. The method includes: performing first etching based on a first process condition; performing second etching based on a second process condition different from the first process condition; and moving the middle edge ring by the actuation mechanism, the moving being performed after the first etching is performed and before the second etching is performed.
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公开(公告)号：US20210020416A1
公开(公告)日：2021-01-21
申请号：US17037406
申请日：2020-09-29
发明人： Rumiko MORIYA , Takanori BANSE , Suguru SATO , Yuuji AKIDUKI , Takehiro TANIKAWA
摘要： There is provided a method for driving a member provided in a processing chamber. The method includes irradiating to the member measurement light having a wavelength that penetrates the member, detecting intensity distribution of reflected light based on reflected light from an upper surface of the member and reflected light from a bottom surface of the member, calculating an optical path difference by applying Fourier transform to a spectrum indicating the intensity distribution, and determining a driving amount of the member based on the optical path difference. The method further includes driving the member based on the determined driving amount.
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