Support Structure for Suspended Injector and Substrate Processing Apparatus Using Same

    公开(公告)号:US20180056317A1

    公开(公告)日:2018-03-01

    申请号:US15685375

    申请日:2017-08-24

    Abstract: A support structure for a suspended injector includes a suspended injector having a tubular vertical portion extending in a vertical direction, one or more chamfered portions formed by chamfering an outer peripheral surface near an upper end of the tubular vertical portion, a pair of holding members each having a flat surface formed on an inner peripheral surface of each of the pair of holding members to engage with each of the chamfered portions, each of the pair of holding members holding the tubular vertical portion of the suspended injector by sandwiching the tubular vertical portion of the suspended injector from both sides each of the pair of holding members, and a support structure part configured to fixedly support the pair of holding members, and configured to suspend and support the suspended injector.

    FILM FORMING APPARATUS
    2.
    发明申请

    公开(公告)号:US20170125282A1

    公开(公告)日:2017-05-04

    申请号:US15297383

    申请日:2016-10-19

    Abstract: A film forming apparatus for forming films on substrates mounted on a rotary table by rotating the rotary table and causing the substrates to sequentially pass through areas to which process gases are supplied, including: recess portions formed in one surface of the rotary table along a circumferential direction and configured to accommodate the substrates; mounting portions disposed with the recess portions and configured to support regions of the substrates closer to centers than peripheral edge portions thereof; groove portions formed within the recess portions so as to surround the mounting portions; communication paths formed so as to extend from regions of the groove portions existing at a side of a rotational center of the rotary table toward an external area of the recess portions; and an exhaust port through which an interior of a vacuum container is vacuum-exhausted.

    SUBSTRATE WARPING MONITORING DEVICE AND SUBSTRATE PROCESSING APPARATUS USING THE SAME, AND SUBSTRATE WARPING MONITORING METHOD

    公开(公告)号:US20190013224A1

    公开(公告)日:2019-01-10

    申请号:US16025560

    申请日:2018-07-02

    Abstract: There is provided a substrate warping monitoring device for monitoring a warping of a substrate mounted in a substrate mounting region formed in a rotary table along a circumferential direction during rotation of the rotary table, including: an optical displacement meter located above the rotary table and configured to irradiate a light to a predetermined position on the rotary table, receive a reflected light reflected off the rotary table and the substrate which passes through the predetermined position and measure a surface profile of the substrate; a memory part configured to store a measurement value acquired when the light is irradiated on a predetermined reference surface, as a reference value; and a calculation part configured to calculate a warping amount of the substrate based on the surface profile of the substrate measured by the optical displacement meter and the reference value stored in the memory part.

    Substrate Processing Apparatus
    5.
    发明申请

    公开(公告)号:US20170114461A1

    公开(公告)日:2017-04-27

    申请号:US15296588

    申请日:2016-10-18

    Abstract: A substrate processing apparatus includes a first hole portion formed through a sidewall of the process chamber and horizontally extending outward and a second hole portion formed to be contiguous with the first hole portion and defining a supply channel for a process gas. The apparatus also includes a gas nozzle, a plurality of seal members and an annular spacer. A proximal end of the gas nozzle is inserted into the first hole portion. The plurality of seal members is spaced apart from each other between an outer circumferential surface of the gas nozzle and the first hole portion. The annular spacer is inserted into the first hole portion and is pressed against an annular surface of an opening periphery of the second hole portion by the gas nozzle in a state where the proximal end of the gas nozzle is engaged with the annular spacer.

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