公开(公告)号：US20180374959A1

公开(公告)日：2018-12-27

申请号：US16117761

申请日：2018-08-30

Applicant: TOKYO INSTITUTE OF TECHNOLOGY ,  AGC Inc.

Inventor： Hideo HOSONO ,  Toshio KAMIYA ,  Hideya KUMOMI ,  Junghwan KIM ,  Nobuhiro NAKAMURA ,  Satoru WATANABE ,  Naomichi MIYAKAWA

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L23/532 ,  H01L23/31

Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.

公开(公告)号：US20180323313A1

公开(公告)日：2018-11-08

申请号：US16027733

申请日：2018-07-05

Applicant: Japan Science and Technology Agency ,  CANON KABUSHIKI KAISHA ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Hideo HOSONO ,  Masahiro HIRANO ,  Hiromichi OTA ,  Toshio KAMIYA ,  Kenji NOMURA

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  C23C14/00 ,  C23C14/34 ,  C23C14/28 ,  C23C14/08

CPC classification number: H01L29/78696 ,  C23C14/0021 ,  C23C14/086 ,  C23C14/28 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.