公开(公告)号：US20180374959A1

公开(公告)日：2018-12-27

申请号：US16117761

申请日：2018-08-30

Applicant: TOKYO INSTITUTE OF TECHNOLOGY ,  AGC Inc.

Inventor： Hideo HOSONO ,  Toshio KAMIYA ,  Hideya KUMOMI ,  Junghwan KIM ,  Nobuhiro NAKAMURA ,  Satoru WATANABE ,  Naomichi MIYAKAWA

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L23/532 ,  H01L23/31

Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.

公开(公告)号：US20190058142A1

公开(公告)日：2019-02-21

申请号：US16169078

申请日：2018-10-24

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY ,  AGC Inc.

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Satoru WATANABE ,  Toshinari WATANABE ,  Kazuhiro ITO ,  Naomichi MIYAKAWA ,  Nobuhiro NAKAMURA

IPC: H01L51/42 ,  H01L31/032 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L51/50 ,  H01L31/0256

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

公开(公告)号：US20150137103A1

公开(公告)日：2015-05-21

申请号：US14566755

申请日：2014-12-11

Applicant: TOKYO INSTITUTE OF TECHNOLOGY ,  ASAHI GLASS COMPANY, LIMITED

Inventor： Hideo Hosono ,  Yoshitake TODA ,  Setsuro ITO ,  Satoru WATANABE ,  Naomichi MIYAKAWA ,  Kazuhiro ITO ,  Toshinari WATANABE

IPC: H01L51/50 ,  H01L51/56

CPC classification number: H01L51/5012 ,  H01B1/08 ,  H01L51/5072 ,  H01L51/5092 ,  H01L51/56

Abstract: A light emitting device including an organic electroluminescence element is provided. The light emitting device may be a display device or a lighting device. The organic electroluminescence element includes an anode, a light emitting layer, and a cathode that are arranged in this order. An electron injection layer is arranged between the light emitting layer and the cathode. The electron injection layer is made of an amorphous C12A7 electride.

Abstract translation: 提供了包括有机电致发光元件的发光器件。 发光装置可以是显示装置或照明装置。 有机电致发光元件包括依次布置的阳极，发光层和阴极。 在发光层和阴极之间配置电子注入层。 电子注入层由无定形C12A7电极制成。

公开(公告)号：US20170186984A1

公开(公告)日：2017-06-29

申请号：US15460455

申请日：2017-03-16

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY ,  Asahi Glass Company, Limited

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Satoru WATANABE ,  Toshinari WATANABE ,  Kazuhiro ITO ,  Naomichi MIYAKAWA ,  Nobuhiro NAKAMURA

IPC: H01L51/42 ,  H01L31/032 ,  H01J37/34 ,  C23C14/08 ,  C23C14/34

CPC classification number: H01L51/4233 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/352 ,  H01J37/3429 ,  H01L31/0324 ,  H01L51/5072 ,  H01L51/5092 ,  H01L51/5096 ,  H01L2031/0344 ,  H01L2251/303 ,  H01L2251/306 ,  Y02E10/549 ,  Y02P70/521

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

公开(公告)号：US20150093583A1

公开(公告)日：2015-04-02

申请号：US14567047

申请日：2014-12-11

Applicant: TOKYO INSTITUTE OF TECHNOLOGY ,  ASAHI GLASS COMPANY, LIMITED

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Katsuro HAYASHI ,  Setsuro ITO ,  Satoru WATANABE ,  Naomichi MIYAKAWA ,  Toshinari WATANABE ,  Kazuhiro ITO

IPC: H01B1/08 ,  C23C14/08 ,  C23C14/35

CPC classification number: H01B1/08 ,  C04B35/44 ,  C04B35/62645 ,  C04B2235/3208 ,  C04B2235/664 ,  C23C14/08 ,  C23C14/082 ,  C23C14/3414 ,  C23C14/35 ,  H01L51/5221

Abstract: A C12A7 electride thin film fabrication method includes a step of forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere with an oxygen partial pressure of less than 0.1 Pa using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×1018 cm−3 to 2.3×1021 cm−3.

Abstract translation: C12A7电极薄膜制造方法包括使用由具有电子密度的结晶C12A7电极制成的靶，在氧分压小于0.1Pa的气氛下通过气相沉积在基板上形成无定形C12A7电极薄膜的步骤 在2.0×1018cm-3至2.3×1021cm-3的范围内。

公开(公告)号：US20170186989A1

公开(公告)日：2017-06-29

申请号：US15460426

申请日：2017-03-16

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY ,  Asahi Glass Company, Limited

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Nobuhiro NAKAMURA ,  Naomichi MIYAKAWA ,  Satoru WATANABE ,  Toshinari WATANABE

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L51/5092 ,  H01L27/3244 ,  H01L27/3276 ,  H01L27/3281 ,  H01L51/0096 ,  H01L51/5012 ,  H01L51/5048 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5203 ,  H01L51/56 ,  H01L2251/5392 ,  H01L2251/558 ,  H05B33/06 ,  H05B33/26

Abstract: A light-emitting device includes a pair of first electrodes arranged separated from and opposing each other on a first surface of a substrate; a light-emitting layer arranged on at least one of the first electrodes; a second electrode arranged on the light-emitting layer; and a bridge layer connecting the first electrodes. The bridge layer is formed of a material having a resistance that falls within a range of 100 kΩ to 100 MΩ.

公开(公告)号：US20220037605A1

公开(公告)日：2022-02-03

申请号：US17451675

申请日：2021-10-21

Applicant: AGC Inc.

Inventor： Satoru WATANABE ,  Yoshitake TODA ,  Kunio MASUMO ,  Nao ISHIBASHI ,  Nobuhiro NAKAMURA ,  Shimpei MORITA ,  Hikaru KOBAYASHI

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00

Abstract: An assembly of nanoparticles includes metal oxide, the nanoparticles including zinc (Zn) and silicon (Si). In addition, the nanoparticles have an atomic ratio of Zn/(Zn+Si) in a range of 0.3 to 0.95. Further, the nanoparticles have an equivalent circular particle diameter in a range of 1 nm to 20 nm.

公开(公告)号：US20200287051A1

公开(公告)日：2020-09-10

申请号：US16878904

申请日：2020-05-20

Applicant: AGC Inc.

Inventor： Kunio MASUMO ,  Nao ISHIBASHI ,  Nobuhiro NAKAMURA ,  Satoru WATANABE ,  Kazuto OHKOSHI ,  Naomichi MIYAKAWA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  H01L21/02 ,  H01L21/383 ,  H01L21/425 ,  H01L29/66

Abstract: A thin film transistor of a top-gate-coplanar type includes a source, a drain, a gate, and a semiconductor layer, wherein the semiconductor layer has a first low-resistance region for the source and a second low-resistance region for the drain, wherein the source and the drain are electrically connected through the first low-resistance region, the semiconductor layer, and the second low-resistance region, and wherein the semiconductor layer is formed of an oxide-based semiconductor containing gallium (Ga), zinc (Zn), and tin (Sn).