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公开(公告)号：US11141830B2
公开(公告)日：2021-10-12
申请号：US16315645
申请日：2017-09-11
发明人： Makoto Shimoda , Masaki Kanazawa
IPC分类号： B24B7/04 , B24B41/06 , B24B7/22 , H01L21/304
摘要： Processing device for uniformly grinding wafers held by a plurality of chucks, and a method for setting the processing device. A processing device includes a coarse grinding device and a fine grinding device that are provided in a column straddling over a holding device. The holding device includes: an index table; chucks concentrically disposed about a rotation shaft; a first movable support unit on the outer peripheral side of the chuck in the radial direction of the index table; and a first fixed support unit on the inner peripheral side of the chuck in the radial direction of the index table. The first movable support unit is interposed between the index table and the chuck, and can be freely expanded and contracted in a vertical direction.
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公开(公告)号：US20180215006A1
公开(公告)日：2018-08-02
申请号：US15842658
申请日：2017-12-14
发明人： Masaki KANAZAWA , Makoto Shimoda
CPC分类号： B24B7/228 , B24B27/0023 , B24B27/0069 , B24B49/04 , B24B49/12 , B24B51/00
摘要： A grinding apparatus that performs thickness measurement across an entire wafer surface without degradation of throughput of wafer grinding and grinds the wafer precisely to a target thickness. A grinding apparatus includes a rough grinding stage for roughly grinding a wafer and a fine grinding stage for finely grinding the wafer. A first thickness measuring means for measuring the thickness of the wafer while the wafer is being transferred is provided to a column so disposed as to span an index table. A control unit of the grinding apparatus corrects a target thickness after fine grinding and computes a target thickness after correction on the basis of an average thickness across the entire surface of the wafer before fine grinding obtained from measured values of the first thickness measuring means.
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公开(公告)号：US10507561B2
公开(公告)日：2019-12-17
申请号：US15842658
申请日：2017-12-14
发明人： Masaki Kanazawa , Makoto Shimoda
摘要： A grinding apparatus that performs thickness measurement across an entire wafer surface without degradation of throughput of wafer grinding and grinds the wafer precisely to a target thickness. A grinding apparatus includes a rough grinding stage for roughly grinding a wafer and a fine grinding stage for finely grinding the wafer. A first thickness measuring means for measuring the thickness of the wafer while the wafer is being transferred is provided to a column so disposed as to span an index table. A control unit of the grinding apparatus corrects a target thickness after fine grinding and computes a target thickness after correction on the basis of an average thickness across the entire surface of the wafer before fine grinding obtained from measured values of the first thickness measuring means.
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公开(公告)号：US10421172B2
公开(公告)日：2019-09-24
申请号：US15777833
申请日：2016-11-28
发明人： Makoto Shimoda , Masaki Kanazawa
IPC分类号： B24B37/04 , B24B7/04 , B24B7/22 , B24B41/02 , B24B41/047 , B24B27/00 , B24B37/30 , B24B47/14 , H01L21/67 , H01L21/02
摘要： [Problem] To provide a processing device for grinding by suppressing brittle-mode grinding and stabilizing a wafer. [Solution] A processing device 1 is provided with: an index table 2 on which a wafer W is moved from a coarse grinding stage S2 to a fine grinding stage S3; a column 4 provided so as to span over the coarse grinding stage S2 and the fine grinding stage S3; a coarse grinding means 5 provided on the column 4 above the coarse grinding stage S2, the coarse grinding means 5 performing coarse-grinding processing on the wafer W; and a fine grinding means 6 provided on the column 4 over the fine grinding stage S3, the fine grinding means 6 performing fine-grinding processing on the wafer W.
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