公开(公告)号：US20230309282A1

公开(公告)日：2023-09-28

申请号：US18196819

申请日：2023-05-12

Applicant: TOPPAN INC.

Inventor： Atsuko AOKI ,  Shinpei KONDO

IPC: H05K9/00 ,  H01F27/28 ,  B32B3/14 ,  B32B15/09 ,  B32B27/36 ,  B32B15/20

CPC classification number: H05K9/0081 ,  H01F27/2804 ,  B32B3/14 ,  B32B15/09 ,  B32B27/36 ,  B32B15/20 ,  B32B2457/00 ,  B32B2307/204 ,  B32B2255/06 ,  B32B2255/26 ,  B32B2307/7376 ,  B32B2307/202

Abstract: A thin electromagnetic wave attenuation film capable of attenuating electromagnetic waves having frequencies in millimeter-wave bands, comprising an electromagnetic wave attenuation film including a dielectric substrate having a front surface and a rear surface, a thin-film conductive layer disposed on the front surface, and a planar inductor or a lamination layer disposed on the rear surface, wherein the thin-film conductive layer includes a plurality of metal plates, and values of natural logarithms obtained by normalizing a thickness T of the metal plates by a skin depth d thereof are in predetermined numerical ranges within a predetermined frequency range. The electromagnetic wave attenuation film is used in the predetermined frequency range. A top coat layer may be provided on the thin-film conductive layer.