公开(公告)号：US11302880B2

公开(公告)日：2022-04-12

申请号：US16283666

申请日：2019-02-22

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Noriaki Ikeda ,  Makoto Nishizawa

IPC: H01L29/786 ,  G09F9/30 ,  H01L21/28 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L27/32 ,  H01L51/10 ,  H01L51/05

Abstract: An organic thin-film transistor includes an insulating substrate, a capacitor electrode formed on the insulating substrate, a first insulating layer covering the capacitor electrode, a gate electrode formed on the first insulating layer, a second insulating layer covering the gate electrode and the capacitor electrode, a source electrode formed on the second insulating layer, a drain electrode formed on the second insulating layer, and a semiconductor layer formed on the second insulating layer in a portion between the source electrode and the drain electrode and including an organic semiconductor material.

公开(公告)号：US08932098B2

公开(公告)日：2015-01-13

申请号：US13763364

申请日：2013-02-08

Applicant: Toppan Printing Co., Ltd.

Inventor： Makoto Nishizawa ,  Hiroyuki Chinone

IPC: H01J9/00 ,  H01J9/24 ,  B41N1/12 ,  H01L51/00 ,  H05B33/10 ,  H01L51/56

CPC classification number: B41N1/12 ,  H01L51/0002 ,  H01L51/56 ,  H05B33/10

Abstract: A method is provided for forming a uniform light emitting medium layer by a relief printing method without occurrence of printing defects. The method includes producing an organic EL device containing a substrate having thereon a pixel electrode, pixel regions that are demarcated with a partition wall on the pixel electrode, a light emitting medium layer having a light emitting layer containing at least an organic light emitting material on the pixel regions, and a counter electrode facing the pixel electrode. The method can have a step of forming at least one layer constituting the light emitting medium layer by a relief printing method, and the ink used in the relief printing method being transferred from two or more adjacent relief patterns within one of the pixel regions and being integrated by flow thereof to form the light emitting medium layer.

Abstract translation: 提供了一种通过凸版印刷方法形成均匀的发光介质层而不发生印刷缺陷的方法。 该方法包括制备含有其上具有像素电极的基板的有机EL器件，与像素电极上的分隔壁划分的像素区域，具有至少含有有机发光材料的发光层的发光介质层 像素区域和面对像素电极的对置电极。 该方法可以具有通过凸版印刷方法形成构成发光介质层的至少一层的步骤，并且在凸版印刷方法中使用的油墨从一个像素区域内的两个或更多个相邻浮雕图案转印而成， 通过其流动而形成发光介质层。

公开(公告)号：US20130189896A1

公开(公告)日：2013-07-25

申请号：US13763364

申请日：2013-02-08

Applicant: Toppan Printing Co., Ltd.

Inventor： Makoto Nishizawa ,  Hiroyuki Chinone

IPC: B41N1/12 ,  H05B33/10

CPC classification number: B41N1/12 ,  H01L51/0002 ,  H01L51/56 ,  H05B33/10

Abstract: A method is provided for forming a uniform light emitting medium layer by a relief printing method without occurrence of printing defects. The method includes producing an organic EL device containing a substrate having thereon a pixel electrode, pixel regions that are demarcated with a partition wall on the pixel electrode, a light emitting medium layer having a light emitting layer containing at least an organic light emitting material on the pixel regions, and a counter electrode facing the pixel electrode. The method can have a step of forming at least one layer constituting the light emitting medium layer by a relief printing method, and the ink used in the relief printing method being transferred from two or more adjacent relief patterns within one of the pixel regions and being integrated by flow thereof to form the light emitting medium layer.

Abstract translation: 提供了一种通过凸版印刷方法形成均匀的发光介质层而不发生印刷缺陷的方法。 该方法包括制备含有其上具有像素电极的基板的有机EL器件，与像素电极上的分隔壁划分的像素区域，具有至少含有有机发光材料的发光层的发光介质层 像素区域和面对像素电极的对置电极。 该方法可以具有通过凸版印刷方法形成构成发光介质层的至少一层的步骤，并且在凸版印刷方法中使用的油墨从一个像素区域内的两个或更多个相邻浮雕图案转印而成， 通过其流动而形成发光介质层。

公开(公告)号：US10312375B2

公开(公告)日：2019-06-04

申请号：US15714393

申请日：2017-09-25

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Noriaki Ikeda ,  Makoto Nishizawa

IPC: G02F1/136 ,  H01L29/417 ,  H01L21/283 ,  H01L29/786 ,  H01L21/28 ,  H01L23/532 ,  H01L21/768 ,  H01L27/12 ,  H01L29/66 ,  H01L27/32 ,  H01L51/05

Abstract: A thin-film transistor including an insulative substrate, a gate electrode formed on the insulative substrate, a gate insulating layer formed on the substrate and the gate electrode, a source electrode and a drain electrode forming on the gate insulating layer and spaced from each other, a semiconductor layer formed on the gate insulating layer and connected to the source electrode and the drain electrode, a semiconductor protective layer formed on the semiconductor layer, an interlayer insulating film formed on the source electrode, the drain electrode and the semiconductor protective layer, the interlayer insulating film including a fluorine compound, and an upper electrode formed on the interlayer insulating film.