公开(公告)号：US11139246B2

公开(公告)日：2021-10-05

申请号：US16559001

申请日：2019-09-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masayuki Kitamura ,  Atsushi Kato

IPC: H01L23/12 ,  H01L23/48 ,  H01L21/4763 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768 ,  H01L21/48 ,  H01L23/528 ,  H01L27/11582

Abstract: According to one embodiment, a semiconductor device includes: a semiconductor substrate; a first via provided on the semiconductor substrate; a metal wiring provided on the first via; and a second via provided on the metal wiring. One of the side surfaces facing each other in the first direction of the metal wiring and one of the side surfaces facing each other in the first direction of the second via are aligned in the first direction.