公开(公告)号：US10741369B2

公开(公告)日：2020-08-11

申请号：US16264884

申请日：2019-02-01

Applicant: Toshiba Memory Corporation

Inventor： Ryo Suemitsu

IPC: H01J37/32

Abstract: A semiconductor manufacturing apparatus according to an embodiment comprises a chamber capable of containing a substrate therein. A mount part can have the substrate mounted thereon. A first member is provided between an inner wall of the chamber and a plasma generation region above the mount part. An optical transmitter is provided in an opening that is provided in the first member to extend from a side of the inner wall of the chamber to the plasma generation region or provided in gaps between a plurality of the first members.

公开(公告)号：US10699882B2

公开(公告)日：2020-06-30

申请号：US16045789

申请日：2018-07-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Ryo Suemitsu ,  Takashi Ohashi

IPC: H01J37/32 ,  H01L21/263 ,  C23C16/50 ,  H01L21/67

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a treatment chamber configured to treat a substrate with plasma, a first annular coil configured to generate a first magnetic field to be applied to the plasma, and a second annular coil configured to generate a second magnetic field to be applied to the plasma. The apparatus further includes a first electric current supplying module configured to supply, to the first annular coil, a first electric current flowing in a first direction, and cause the first annular coil to generate the first magnetic field. The apparatus further includes a second electric current supplying module configured to supply, to the second annular coil, a second electric current flowing in a second direction that is different from the first direction, and cause the second annular coil to generate the second magnetic field.

公开(公告)号：US10079184B2

公开(公告)日：2018-09-18

申请号：US14730446

申请日：2015-06-04

Applicant: Toshiba Memory Corporation

Inventor： Yuya Matsuda ,  Ryo Suemitsu

IPC: H01J37/32 ,  H01L21/66

CPC classification number: H01L22/26 ,  H01J37/32963 ,  H01J37/32972 ,  H01J2237/24564

Abstract: According to one embodiment, a semiconductor manufacturing apparatus includes a manufacturing processor, a signal acquisition unit, a frequency characteristic acquisition unit, and an end-point acquisition unit. The signal acquisition unit acquires a first processing signal which shows a different behavior during processing of a stacked body and after the processing of the stacked body. The frequency characteristic acquisition unit acquires a frequency characteristic of a noise caused by a periodic structure of the stacked body from the first processing signal during the processing of the stacked body. The end-point acquisition unit detects an end point of the processing using the acquired frequency characteristic. The manufacturing processor ends the processing when the end point is detected.