公开(公告)号：US20200294768A1

公开(公告)日：2020-09-17

申请号：US16558548

申请日：2019-09-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takashi Ohashi

IPC: H01J37/32

Abstract: According to one embodiment, a plasma processing apparatus includes a chamber, a substrate stage configured to support a substrate inside the chamber, and a plasma generation structure configured to generate plasma processing the substrate, in a space above the substrate inside the chamber. Further, the plasma processing apparatus includes an electromagnet including coils configured to apply a magnetic field to the space, and an electromagnet controller configured to cause pulsed electric currents, in each of which its direction and ON/OFF are pulsed, to flow through the coils.

公开(公告)号：US20200091081A1

公开(公告)日：2020-03-19

申请号：US16298056

申请日：2019-03-11

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Akitsugu HATAZAKI ,  Hiroko Tahara ,  Naomi Fukumaki ,  Masayuki Kitamura ,  Takashi Ohashi

IPC: H01L23/532 ,  H01L21/768

Abstract: A semiconductor device according to one embodiment includes a semiconductor substrate, a stack body including metal films and first insulating films alternately stacked on the semiconductor substrate and including a stepped end portion, conducting films respectively protruding from the metal films on all steps of the end portion, contact portions respectively provided above the conducting films, a second insulating film surrounding side surfaces of the contact portions, and a barrier metal film provided between the second insulating film and the contact portions and between the conducting films and the contact portions. The entire top surfaces of the conducting films are covered by the barrier metal film and the second insulating film.

公开(公告)号：USRE46628E1

公开(公告)日：2017-12-12

申请号：US14800291

申请日：2015-07-15

Applicant: Toshiba Memory Corporation

Inventor： Takashi Ohashi

IPC: B44C1/22 ,  B82Y40/00 ,  H01L21/302 ,  B82Y10/00 ,  G03F7/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

Abstract: A pattern forming method including: (a) forming a porous layer above an etching target layer; (b) forming an organic material with a transferred pattern on the porous layer; (c) forming, by use of the transferred pattern, a processed pattern in a transfer oxide film that is more resistant to etching than the porous layer; and (d) transferring the processed pattern to the etching target layer by use of the transfer oxide film as a mask.

公开(公告)号：US10699882B2

公开(公告)日：2020-06-30

申请号：US16045789

申请日：2018-07-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Ryo Suemitsu ,  Takashi Ohashi

IPC: H01J37/32 ,  H01L21/263 ,  C23C16/50 ,  H01L21/67

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a treatment chamber configured to treat a substrate with plasma, a first annular coil configured to generate a first magnetic field to be applied to the plasma, and a second annular coil configured to generate a second magnetic field to be applied to the plasma. The apparatus further includes a first electric current supplying module configured to supply, to the first annular coil, a first electric current flowing in a first direction, and cause the first annular coil to generate the first magnetic field. The apparatus further includes a second electric current supplying module configured to supply, to the second annular coil, a second electric current flowing in a second direction that is different from the first direction, and cause the second annular coil to generate the second magnetic field.

公开(公告)号：US10388662B2

公开(公告)日：2019-08-20

申请号：US15695892

申请日：2017-09-05

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Kazunori Horiguchi ,  Takashi Ohashi

IPC: H01L21/66 ,  H01L27/11582 ,  H01L21/02 ,  H01L27/1157 ,  H01L21/311

Abstract: A manufacturing method of a semiconductor memory device includes disposing a first stacked body on a substrate, forming a first through via hole in the first stacked body, and determining to remove an upper portion of the first stacked body based on a comparison of a determined value of a width of the first through via hole with a reference value. The method further includes forming a second film in the first through via hole responsive to the determination to remove the upper portion of the first stacked body, removing the upper portion of the first stacked body and a portion of the second film, and disposing a second stacked body on the first stacked body and the second film. The method further includes forming a second through via hole to expose at least a portion of the second film, and removing the second film in the first through via hole.

公开(公告)号：US10825770B2

公开(公告)日：2020-11-03

申请号：US16298056

申请日：2019-03-11

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Akitsugu Hatazaki ,  Hiroko Tahara ,  Naomi Fukumaki ,  Masayuki Kitamura ,  Takashi Ohashi

IPC: H01L21/768 ,  H01L27/11551 ,  H01L27/11521 ,  H01L21/822 ,  H01L27/11578 ,  H01L23/532 ,  H01L21/311

Abstract: A semiconductor device according to one embodiment includes a semiconductor substrate, a stack body including metal films and first insulating films alternately stacked on the semiconductor substrate and including a stepped end portion, conducting films respectively protruding from the metal films on all steps of the end portion, contact portions respectively provided above the conducting films, a second insulating film surrounding side surfaces of the contact portions, and a barrier metal film provided between the second insulating film and the contact portions and between the conducting films and the contact portions. The entire top surfaces of the conducting films are covered by the barrier metal film and the second insulating film.

公开(公告)号：US10784090B2

公开(公告)日：2020-09-22

申请号：US16290808

申请日：2019-03-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takashi Ohashi

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/3065

Abstract: A plasma processing device includes a chamber; a substrate stage that supports a substrate inside the chamber; a plasma generator that generates plasma by which the substrate is processed in a space above the substrate inside the chamber; and an electromagnet. The electromagnet is provided in each of a plurality of regions, which are provided on a top of the chamber in an upper part thereof, so as to be independently movable. The plasma processing device further includes a controller configured to move the electromagnet to produce a uniform plasma density onto the substrate.

公开(公告)号：US10522372B2

公开(公告)日：2019-12-31

申请号：US15907464

申请日：2018-02-28

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takashi Ohashi

IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  H01J37/24

Abstract: A plasma processing device includes a stage, a cluster generation machine, and a plasma generation machine. The stage is disposed in a processing chamber. The stage may support a substrate. The cluster generation machine generates cluster gas by clustering process gas. The plasma generation machine generates plasma of at least one of the process gas and the cluster gas in the processing chamber. The plasma generation machine processes the substrate using the generated plasma.

公开(公告)号：US10438845B2

公开(公告)日：2019-10-08

申请号：US16104221

申请日：2018-08-17

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takashi Ohashi

IPC: H01L21/70 ,  H01L21/768 ,  H01L23/535 ,  H01L21/02 ,  H01L21/311

Abstract: A semiconductor device according to the present embodiment is provided with a lower layer. A first film is provided on the lower layer. A first side-wall film covers a contact hole provided in the first film, along a side wall in the contact hole and from a lower end of the contact hole to an upper end of the contact hole. A second side-wall film is provided on the side wall in the contact hole via the first side-wall film, to cover the contact hole from a position higher than a lower end of the first side-wall film to the upper end of the contact hole. A conductor is provided inside the first and second side-wall films in the contact hole. An upper layer is provided on the first film.