公开(公告)号：US10276586B2

公开(公告)日：2019-04-30

申请号：US15254014

申请日：2016-09-01

申请人： TOSHIBA MEMORY CORPORATION

发明人： Atsushi Murakoshi ,  Yasuhito Yoshimizu ,  Tomofumi Inoue ,  Tatsuya Kato ,  Yuta Watanabe ,  Fumitaka Arai

IPC分类号： H01L27/115 ,  H01L29/792 ,  H01L29/423 ,  H01L29/66 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11578 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11575 ,  H01L21/28

摘要： According to one embodiment, a semiconductor device includes a substrate and a semiconductor layer. The device further includes a first electrode layer that is provided on a side surface of the semiconductor layer with a first insulating film interposed therebetween. The device further includes a charge storage layer provided on a side surface of the first electrode layer with the second insulating film interposed therebetween.