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公开(公告)号：US20190036308A1
公开(公告)日：2019-01-31
申请号：US16045633
申请日：2018-07-25
Applicant: TRILUMINA CORP.
Inventor： Richard F. CARSON , Nein-Yi LI , Mial E. WARREN
Abstract: Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.
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公开(公告)号：US20200144791A1
公开(公告)日：2020-05-07
申请号：US16733901
申请日：2020-01-03
Applicant: TRILUMINA CORP.
Inventor： Richard F. CARSON , Nein-Yi LI , Mial E. WARREN
Abstract: Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.
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公开(公告)号：US20200335942A1
公开(公告)日：2020-10-22
申请号：US16917785
申请日：2020-06-30
Applicant: TRILUMINA CORP.
Inventor： Richard F. CARSON , Nein-Yi LI , Mial E. WARREN
Abstract: Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.
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公开(公告)号：US20200169065A1
公开(公告)日：2020-05-28
申请号：US16627958
申请日：2018-08-13
Applicant: TRILUMINA CORP.
Inventor： Richard F. CARSON , Nein-Yi LI , Mial E. WARREN
Abstract: A VCSELNECSEL array design is disclosed that results in arrays that can be directly soldered to a PCB using conventional surface-mount assembly and soldering techniques for mass production. The completed VCSEL array does not need a separate package and no precision sub-mount and flip-chip bonding processes are required. The design allows for on-wafer probing of the completed arrays prior to singulation of the die from the wafer. Embodiments relate to semiconductor devices, and more particularly to multibeam arrays of semiconductor lasers for high power and high frequency applications and methods of making and using the same.
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