-
公开(公告)号:US20100046284A1
公开(公告)日:2010-02-25
申请号:US12515898
申请日:2007-11-12
CPC分类号: H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要: An MRAM comprises: a plurality of magnetic memory cells each having a magnetoresistive element; and a magnetic field application section. The magnetic field application section applies an offset adjustment magnetic field in a certain direction to the plurality of magnetic memory cells from outside the plurality of magnetic memory cells. Respective data stored in the plurality of magnetic memory cells become the same when the offset adjustment magnetic field is removed.
摘要翻译: MRAM包括:多个具有磁阻元件的磁存储单元; 和磁场施加部。 磁场施加部从多个磁存储单元的外部向多个磁存储单元施加一定方向的偏移调整磁场。 当去除偏移调整磁场时,存储在多个磁存储单元中的各个数据变得相同。