公开(公告)号：US5244820A

公开(公告)日：1993-09-14

申请号：US921988

申请日：1992-08-03

申请人： Tadashi Kamata ,  Mitsuharu Honda ,  Jun Sugiura ,  Nobuo Owada ,  Hizuru Yamaguchi

发明人： Tadashi Kamata ,  Mitsuharu Honda ,  Jun Sugiura ,  Nobuo Owada ,  Hizuru Yamaguchi

IPC分类号： H01L21/265 ,  H01L21/8242

CPC分类号： H01L21/26593 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/2652 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L27/10894 ,  Y10S148/083

摘要： The present invention relates to an ion implantation process in a wafer process for a semiconductor integrated circuit device. Particularly, according to the present invention, a shallow junction can be formed by performing the implantation of ion while holding a wafer to be processed at a low temperature.

摘要翻译： 本发明涉及用于半导体集成电路器件的晶片工艺中的离子注入工艺。 特别地，根据本发明，可以通过在保持待处理的晶片在低温下进行离子的注入来形成浅结。

公开(公告)号：US5134301A

公开(公告)日：1992-07-28

申请号：US547018

申请日：1990-07-02

申请人： Tadashi Kamata ,  Jun Sugiura ,  Mitsuharu Honda

发明人： Tadashi Kamata ,  Jun Sugiura ,  Mitsuharu Honda

IPC分类号： H01J27/26 ,  H01J37/02 ,  H01J37/30 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J27/26 ,  H01J37/026 ,  H01J37/3007 ,  H01L21/265

摘要： An ion injecting apparatus and a process for fabricating a semiconductor integrated circuit device by using the ion implanting apparatus is provided. When a wafer, e.g., a Si wafer, is to be implanted with ions, an electrode or the like made of a highly pure Si material is used to achieve a high throughput and a high density implantation. This serves to prevent the occurrence of contamination due to sputtering of the electrode member along the beam passage in the ion implanting apparatus during the high density beam implantation.