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    Chemically adsorbed film and method of manufacturing the same
    1.
    发明授权
    Chemically adsorbed film and method of manufacturing the same 失效

    公开(公告)号：US06593000B2

    公开(公告)日：2003-07-15

    申请号：US10058220

    申请日：2002-01-29

    申请人： Tadashi Ohtake ,  Norihisa Mino ,  Kazufumi Ogawa

    发明人： Tadashi Ohtake ,  Norihisa Mino ,  Kazufumi Ogawa

    IPC分类号： B32B904

    CPC分类号： B82Y30/00 ,  B05D1/185 ,  B82Y40/00 ,  Y10T428/261 ,  Y10T428/31504 ,  Y10T428/31663

    摘要： A highly dense chemically adsorbed film is formed by repeating the alternate process of adsorption reaction and washing. Adsorption reaction is directed by contacting the substrate surface, which has or is given an alkali metal or a functional group, with a chemical adsorbent, having halosilyl or alkoxysilyl groups at the end of molecules. An unreacted chemical adsorbent is then washed away from the substrate surface. The alternate treatment of adsorption reaction and washing is repeated, thereby covalently bonding a chemically adsorbed film to the substrate surface. As a result, a chemically adsorbed film is formed in which stem molecules are directly or indirectly covalently bonded to the substrate surface via at least one element chosen from the group consisting of Si, Ge, Sn, Ti, Zr, S or C and graft molecules are covalently bonded to at least one element chosen from Si, Ge, Sn, Ti, Zr, S or C via at least one bond chosen from —SiO—, —GeO—, SnO—, —TiO—, ZrO—, —SO2—, —SO— and —C—.

    Method of manufacturing a chemically adsorbed multilayer film
    2.
    发明授权
    Method of manufacturing a chemically adsorbed multilayer film 失效
    制造化学吸附多层膜的方法

    公开(公告)号：US5869136A

    公开(公告)日：1999-02-09

    申请号：US12753

    申请日：1993-02-03

    申请人： Tadashi Ohtake ,  Norihisa Mino ,  Kazufumi Ogawa

    发明人： Tadashi Ohtake ,  Norihisa Mino ,  Kazufumi Ogawa

    IPC分类号： B05D1/18 ,  C03C23/00 ,  B05D1/36

    CPC分类号： B82Y30/00 ,  B05D1/185 ,  B82Y40/00 ,  C03C23/00

    摘要： A chemically adsorbed multilayer film is formed through the process of replacing a halogen atom on the surface of a chemically adsorbed film with an alkaline metal or changing the halogen atom to a Grignard group by Grignard reaction. This manufacturing method does not disrupt the molecules of the chemically adsorbed film, is easy to perform, low in cost and is safe. After replacing the halogen (for example, Br) on the surface of the film with an alkaline metal such as Li, a condensation reaction including a dealkalihalide reaction is promoted by contacting the chemically adsorbed film with an adsorbent, such as a chemical adsorbent--containing a halosilane group at one end of a molecule--dissolved in a nonaqueous solvent. A chemically adsorbed multilayer film is then formed by reacting the chemically adsorbed film with chemical absorption composition and with water after removing unreacted adsorbents using a nonaqueous solution.

    摘要翻译： 通过用碱金属代替化学吸附膜表面上的卤素原子或通过格利雅反应将卤素原子改变成格利雅特基团的方法形成化学吸附的多层膜。 该制造方法不会破坏化学吸附膜的分子，容易实施，成本低，安全。 用Li等碱性金属取代膜表面的卤素（例如Br）后，通过使化学吸附膜与吸附剂（如含化学吸附剂）接触来促进包括脱卤化物反应的缩合反应 分子一端的卤代硅烷基溶解在非水溶剂中。 然后通过使用非水溶液除去未反应的吸附剂，使化学吸附膜与化学吸收组合物和水反应形成化学吸附的多层膜。

    Chemically adsorbed film and method of manufacturing the same
    3.
    发明授权
    Chemically adsorbed film and method of manufacturing the same 有权

    公开(公告)号：US06410152B1

    公开(公告)日：2002-06-25

    申请号：US09892530

    申请日：2001-06-28

    申请人： Tadashi Ohtake ,  Norihisa Mino ,  Kazufumi Ogawa

    发明人： Tadashi Ohtake ,  Norihisa Mino ,  Kazufumi Ogawa

    IPC分类号： B32B904

    摘要： A highly dense chemically adsorbed film is formed by repeating the alternate process of adsorption reaction and washing. Adsorption reaction is directed by contacting the substrate surface, which has or is given an alkali metal or a functional group, with a chemical adsorbent, having halosilyl or alkoxysilyl groups at the end of molecules. An unreacted chemical adsorbent is then washed away from the substrate surface. The alternate treatment of adsorption reaction and washing is repeated, thereby covalently bonding a chemically adsorbed film to the substrate surface. As a result, a chemically adsorbed film is formed in which stem molecules are directly or indirectly covalently bonded to the substrate surface via at least one element chosen from the group consisting of Si, Ge, Sn, Ti, Zr, S or C and graft molecules are covalently bonded to at least one element chosen from Si, Ge, Sn, Ti, Zr, S or C via at least one bond chosen from —SiO—, —GeO—, SnO—, —TiO—, ZrO—, —SO2—, —SO— and —C—.

    Chemically adsorbed film and method of manufacturing the same
    5.
    发明授权
    Chemically adsorbed film and method of manufacturing the same 失效
    化学吸附膜及其制造方法

    公开(公告)号：US5466487A

    公开(公告)日：1995-11-14

    申请号：US316106

    申请日：1994-09-30

    申请人： Tadashi Ohtake ,  Norihisa Mino ,  Kazufumi Ogawa

    发明人： Tadashi Ohtake ,  Norihisa Mino ,  Kazufumi Ogawa

    IPC分类号： B05D1/18 ,  B05D3/02

    CPC分类号： B82Y30/00 ,  B05D1/185 ,  B82Y40/00 ,  Y10T428/31504 ,  Y10T428/31533 ,  Y10T428/31536 ,  Y10T428/31989 ,  Y10T428/31993

    摘要： A chemically adsorbed monomolecular or a laminated monomolecular film comprising a monomolecular film formed on said substrate surface by covalent S-bonds is disclosed. For example, the covalent S-bond is selected of a group consisting of --(S.dbd.O)-- and --(O.dbd.S.dbd.O)--. A method of producing a chemical adsorption film comprising; contacting a substrate containing hydroxl groups present on the surface with a non-aqueous solvent containing a material having a thionyl halide group or sulfuryl haloride group; removing unreacted surface active material remaining on the substrate by washing the substrate with a non-aqueous organic solution for making monomolecular a precursor film; reacting unreacted surface active material remaining on the adsorbed monomolecular precursor film with water; and drying the adsorbed monomolecular film is also disclosed. Further, a method of producing a laminated chemical adsorption film comprising laminating a monomolecular adsorption film by repeating the above steps is disclosed.

    摘要翻译： 公开了一种化学吸附单分子或包含通过共价S-键在所述基片表面上形成的单分子膜的层叠单分子膜。 例如，共价S-键选自 - （S = O） - 和 - （O = S = O） - 。 一种生产化学吸附膜的方法，包括： 使含有存在于表面上的羟基的底物与含有具有亚硫酰卤基或硫酰卤基的物质的非水溶剂接触; 通过用用于制备单分子前体膜的非水有机溶液洗涤基板来除去残留在基板上的未反应的表面活性物质; 将残留在吸附的单分子前体膜上的未反应的表面活性物质与水反应; 并且还公开了吸附的单分子膜的干燥。 此外，公开了通过重复上述步骤来层压单分子吸附膜的层压化学吸附膜的制造方法。

    Chemically adsorber film and method of manufacturing the same
    6.
    发明授权
    Chemically adsorber film and method of manufacturing the same 失效
    化学吸附膜及其制造方法

    公开(公告)号：US06277444B1

    公开(公告)日：2001-08-21

    申请号：US08306517

    申请日：1994-09-15

    申请人： Tadashi Ohtake ,  Norihisa Mino ,  Kazufumi Ogawa

    发明人： Tadashi Ohtake ,  Norihisa Mino ,  Kazufumi Ogawa

    IPC分类号： B05D138

    CPC分类号： B82Y30/00 ,  B05D1/185 ,  B82Y40/00 ,  Y10T428/261 ,  Y10T428/31504 ,  Y10T428/31663

    摘要： A highly dense chemically adsorbed film is formed by repeating the alternate process of adsorption reaction and washing. Adsorption reaction is directed by contacting the substrate surface, which has or is given an alkali metal or a functional group, with a chemical adsorbent, having halosilyl or alkoxysilyl groups at the end of molecules. An unreacted chemical adsorbent is then washed away from the substrate surface. The alternate treatment of adsorption reaction and washing is repeated, thereby covalently bonding a chemically adsorbed film to the substrate surface. As a result, a chemically adsorbed film is formed in which stem molecules are directly or indirectly covalently bonded to the substrate surface via at least one element chosen from the group consisting of Si, Ge, Sn, Ti, Zr, S or C and graft molecules are covalently bonded to at least one element chosen from Si, Ge, Sn, Ti, Zr, S or C via at least one bond chosen from —SiO—, —GeO—, SnO—, —TiO—, ZrO—, —SO2—, —SO— and —C—.

    摘要翻译： 通过重复吸附反应和洗涤的交替过程形成高密度的化学吸附膜。 吸附反应是通过将具有或被赋予碱金属或官能团的底物表面与分子末端具有卤代甲硅烷基或烷氧基甲硅烷基的化学吸附剂接触来进行的。 然后将未反应的化学吸附剂从基底表面上冲走。 重复吸附反应和洗涤的替代处理，从而将化学吸附的膜共价键合到基材表面。 结果，形成化学吸附膜，其中茎分子通过选自Si，Ge，Sn，Ti，Zr，S或C中的至少一种元素直接或间接地共价结合到基底表面，并且接枝 分子通过选自-SiO - ，-GeO-，SnO-，-TiO-，ZrO - ， - 的至少一种键共价结合至选自Si，Ge，Sn，Ti，Zr，S或C中的至少一种元素。 SO2-，-SO-和-C-。

    Information recording medium and methods of manufacturing and using the same
    9.
    发明授权
    Information recording medium and methods of manufacturing and using the same 失效
    信息记录介质及其制造和使用方法

    公开(公告)号：US5447778A

    公开(公告)日：1995-09-05

    申请号：US107308

    申请日：1993-08-17

    申请人： Tadashi Ohtake ,  Norihisa Mino ,  Kazufumi Ogawa

    发明人： Tadashi Ohtake ,  Norihisa Mino ,  Kazufumi Ogawa

    IPC分类号： B05D1/18 ,  C08F8/42 ,  G11B7/0045 ,  G11B7/245 ,  G11B7/249 ,  G11B7/2492 ,  G11B7/253 ,  G11B7/2531 ,  G11B9/00 ,  G11B11/00 ,  G11B11/12 ,  B32B3/00

    CPC分类号： G11B7/2492 ,  B05D1/185 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08F8/42 ,  G11B11/002 ,  G11B11/007 ,  G11B11/12 ,  G11B7/00455 ,  G11B7/245 ,  G11B7/249 ,  G11B9/14 ,  G11B9/149 ,  G11B7/2531 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/24802 ,  Y10T428/24909 ,  Y10T428/31504 ,  Y10T428/31678

    摘要： An information recording layer on a substrate provides a method of recording information by selectively opening the rings of dicyclopentadiene skeletons, thus recording information by forming cyclopentadiene skeletons. The information recorded by the method can be erased by the cycloaddition of cyclopentadiene skeletons. Information can also be recorded or erased by incorporating or eliminating a metal ion from a selectively opened section of a ring of a dicyclopentadiene skeleton after forming an organic thin film comprising the dicyclopentadiene skeleton. Alternatively, after the formation of an organic thin film comprising a cyclopentadiene skeleton, a heterocycle or a benzene ring, a metal ion is incorporated or eliminated from a section between at least two rings of the cyclopentadiene skeleton, the heterocycle or the benzene ring. Thereafter, a metallocene skeleton or a skeleton analogous to the metallocene skeleton is formed or eliminated, thus recording or erasing information. The selective opening of a section of a dicyclopentadiene skeleton ring is carried out by heat or light. The readout of the information is performed by recognizing the cyclopentadiene skeleton, the metallocene skeleton, the skeleton analogous to the metallocene skeleton or the metal atom. The information recording layer of the invention is a chemically adsorbed monomolecular film with a thickness at the angstrom level.

    摘要翻译： 基板上的信息记录层提供了通过选择性地打开双环戊二烯骨架环以记录信息的方法，从而通过形成环戊二烯骨架来记录信息。 通过该方法记录的信息可以通过环戊二烯骨架的环加成来消除。 在形成包含二环戊二烯骨架的有机薄膜之后，也可以通过在二环戊二烯骨架的环的选择性开放部分中并入或除去金属离子来记录或消除信息。 或者，在形成包含环戊二烯骨架，杂环或苯环的有机薄膜之后，从环戊二烯骨架，杂环或苯环的至少两个环之间的部分引入或除去金属离子。 此后，形成或消除类似于茂金属骨架的茂金属骨架或骨架，从而记录或擦除信息。 二环戊二烯骨架环的一部分的选择性打开通过热或光进行。 通过识别环戊二烯骨架，金属茂骨架，类似于茂金属骨架或金属原子的骨架来进行信息的读出。 本发明的信息记录层是厚度为埃埃的化学吸附单分子膜。

    Information recording medium and methods of manufacturing and using the same
    10.
    发明授权
    Information recording medium and methods of manufacturing and using the same 失效
    信息记录介质及其制造和使用方法

    公开(公告)号：US5591487A

    公开(公告)日：1997-01-07

    申请号：US453506

    申请日：1995-05-30

    申请人： Tadashi Ohtake ,  Norihisa Mino ,  Kazufumi Ogawa

    发明人： Tadashi Ohtake ,  Norihisa Mino ,  Kazufumi Ogawa

    IPC分类号： B05D1/18 ,  C08F8/42 ,  G11B7/0045 ,  G11B7/245 ,  G11B7/249 ,  G11B7/2492 ,  G11B7/253 ,  G11B7/2531 ,  G11B9/00 ,  G11B11/00 ,  G11B11/12 ,  B05D3/00

    CPC分类号： G11B7/2492 ,  B05D1/185 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08F8/42 ,  G11B11/002 ,  G11B11/007 ,  G11B11/12 ,  G11B7/00455 ,  G11B7/245 ,  G11B7/249 ,  G11B9/14 ,  G11B9/149 ,  G11B7/2531 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/24802 ,  Y10T428/24909 ,  Y10T428/31504 ,  Y10T428/31678

    摘要： An information recording layer on a substrate provides a method of recording information by selectively opening the rings of dicyclopentadiene skeletons, thus recording information by forming cyclopentadiene skeletons. The information recorded by the method can be erased by the cycloaddition of cyclopentadiene skeletons. Information can also be recorded or erased by incorporating or eliminating a metal ion from a selectively opened section of a ring of a dicyclopentadiene skeleton after forming an organic thin film comprising the dicyclopentadiene skeleton. Alternatively, after the formation of an organic thin film comprising a cyclopentadiene skeleton, a heterocycle or a benzene ring, a metal ion is incorporated or eliminated from a section between at least two rings of the cyclopentadiene skeleton, the heterocycle or the benzene ring. Thereafter, a metallocene skeleton or a skeleton analogous to the metallocene skeleton is formed or eliminated, thus recording or erasing information. The selective opening of a section of a dicyclopentadiene skeleton ring is carried out by heat or light. The readout of the information is performed by recognizing the cyclopentadiene skeleton, the metallocene skeleton, the skeleton analogous to the metallocene skeleton or the metal atom. The information recording layer of the invention is a chemically adsorbed monomolecular film with a thickness at the angstrom

    摘要翻译： 基板上的信息记录层提供了通过选择性地打开双环戊二烯骨架环以记录信息的方法，从而通过形成环戊二烯骨架来记录信息。 通过该方法记录的信息可以通过环戊二烯骨架的环加成来消除。 在形成包含二环戊二烯骨架的有机薄膜之后，也可以通过在二环戊二烯骨架的环的选择性开放部分中并入或除去金属离子来记录或消除信息。 或者，在形成包含环戊二烯骨架，杂环或苯环的有机薄膜之后，从环戊二烯骨架，杂环或苯环的至少两个环之间的部分引入或除去金属离子。 此后，形成或消除类似于茂金属骨架的茂金属骨架或骨架，从而记录或擦除信息。 二环戊二烯骨架环的一部分的选择性打开通过热或光进行。 通过识别环戊二烯骨架，金属茂骨架，类似于茂金属骨架或金属原子的骨架来进行信息的读出。 本发明的信息记录层是厚度为埃的化学吸附单分子膜